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JPS61186061A - Device for driving contact type image sensor or thermal head or the like - Google Patents

Device for driving contact type image sensor or thermal head or the like

Info

Publication number
JPS61186061A
JPS61186061A JP60026060A JP2606085A JPS61186061A JP S61186061 A JPS61186061 A JP S61186061A JP 60026060 A JP60026060 A JP 60026060A JP 2606085 A JP2606085 A JP 2606085A JP S61186061 A JPS61186061 A JP S61186061A
Authority
JP
Japan
Prior art keywords
resin
image sensor
thermal head
film
driving device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP60026060A
Other languages
Japanese (ja)
Other versions
JPH081768B2 (en
Inventor
Hironori Murakami
裕紀 村上
Takashi Ozawa
隆 小澤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Business Innovation Corp
Original Assignee
Fuji Xerox Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Xerox Co Ltd filed Critical Fuji Xerox Co Ltd
Priority to JP60026060A priority Critical patent/JPH081768B2/en
Publication of JPS61186061A publication Critical patent/JPS61186061A/en
Publication of JPH081768B2 publication Critical patent/JPH081768B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/30Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/328Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by welding

Landscapes

  • Facsimile Heads (AREA)
  • Electric Connection Of Electric Components To Printed Circuits (AREA)
  • Wire Bonding (AREA)
  • Non-Insulated Conductors (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

PURPOSE:To attain thin profile for a drive section and to reduce the time for bonding and test by connecting directly a bonding pad to a wiring pattern corresponding onto a board via a hot-pressed anisotropic conductive film. CONSTITUTION:Wiring patterns 22, 42 prolonged up to the corresponding position respectively to each bonding pad 31 of an IC30 are formed to the surface of an insulation board 10. Then the anisotropic conductive film 70 cut off into a size to cover each pattern tip is provided on the wiring patterns 22, 42. Then the IC30 is provided on the film 70 with its face down to align each bonding pad 31 and the tip of the wiring patterns 22, 42. Then the film 70 and the IC30 are hot-pressed onto the board by using a hot press to bond directly the bonding pad 31 and the tip of the wiring patterns 22, 42.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 この発明は、密着型イメージセンサの受光部やサーマル
ヘッドの発熱部等の電子ディバイスの、対象物(これら
の例では原稿や記録用紙)に密着あるいはそれに近い状
態で対向して機能するようになる素子と同一基板上にI
C化されて配されてこれら素子を駆動する密着型イメー
ジセンサまたはサーマルヘッド等の駆動装置に関し、特
に該ICの上記基板への実装構造の改良に関する。
[Detailed Description of the Invention] [Industrial Application Field] The present invention applies to objects (in these examples, manuscripts and recording paper) of electronic devices such as the light receiving part of a contact image sensor and the heat generating part of a thermal head. The I
The present invention relates to a driving device such as a contact type image sensor or a thermal head that drives these elements arranged in a C format, and particularly relates to an improvement in the mounting structure of the IC on the substrate.

〔従来の技術〕[Conventional technology]

第4図および第5図に、−例として従来の密着型イメー
ジセンサにおける上記駆動用IC(以下単にICという
)の実装態様を示す。ただし、第4図は同密着型イメー
ジセンサの部分平面図、第5図は第4図のA−A’線部
における断面図である。
FIG. 4 and FIG. 5 show, as an example, how the driving IC (hereinafter simply referred to as IC) is mounted in a conventional contact type image sensor. However, FIG. 4 is a partial plan view of the contact type image sensor, and FIG. 5 is a sectional view taken along line AA' in FIG. 4.

これら第4図および第5図において、10はガラスやセ
ラミック等からなる絶縁基板、20はこの基板10上に
、Al、Cr、Au等の導電性薄膜からなる分割電極と
、5e−As−Teまたはa−8i等の非晶質あるいは
CdS、CdSe等の多結晶の半導体膜からなる光導電
層と、5n02やITO等の透明導電性薄膜からなる透
明電極とが例えば順次堆積された構造となっている(こ
の構造は既に周知であり詳細な図示は省略した)同イメ
ージセンサの受光部、21は該受光部20の上述した各
電極から基板10上に例えば図示の如く引き出された配
線パターン、30はこれら配線パターン21を通じて受
光部20を駆動する当のIC131は該IC3Qのボン
ディングパッド、40は上記受光部20の駆動に際して
、該IC3Qへの給電や該IC3Qと図示しない主装置
との間での各種信号の授受を行う制御配線部、41はそ
の配線パターンの一例、50はIC3Q−のボンディン
グパッド31と上述した配線パターン21および41と
を電気的に実接続するボンディングワイヤ、60は該ワ
イヤ50によりボンディングされた工C30および該ワ
イヤ50を保護するための適宜な樹脂からなる保護膜で
ある。
4 and 5, 10 is an insulating substrate made of glass, ceramic, etc., and 20 is a divided electrode made of a conductive thin film of Al, Cr, Au, etc. on this substrate 10, and 5e-As-Te. Alternatively, a photoconductive layer made of an amorphous semiconductor film such as a-8i or a polycrystalline semiconductor film such as CdS or CdSe, and a transparent electrode made of a transparent conductive thin film such as 5n02 or ITO are deposited in sequence. 21 is a wiring pattern drawn out from each of the above-mentioned electrodes of the light receiving section 20 onto the substrate 10 as shown in the figure, for example. Reference numeral 30 indicates a bonding pad of the IC 3Q, and 40 indicates a bonding pad of the IC 3Q for driving the light receiving section 20 through these wiring patterns 21, and a reference numeral 40 indicates a connection pad for supplying power to the IC 3Q and connecting the IC 3Q to a main device (not shown) when driving the light receiving section 20. 41 is an example of its wiring pattern; 50 is a bonding wire that electrically connects the bonding pad 31 of IC3Q- to the wiring patterns 21 and 41 described above; 60 is the wire; This is a protective film made of an appropriate resin for protecting the wire 50 and the wire 50 bonded by the wire 50.

このように従来は、IC3Qを基板10に実装するに、
該IC3Qをいわゆるフェースアンプしてその背虱を基
板10上に適宜に接着した後、ワイヤ50によるいわゆ
るワイヤボンディングによって該IC3Qとその周辺回
路との電気的導通をとるようにしていた。
In this way, conventionally, when mounting IC3Q on the board 10,
After the IC3Q is made into a so-called face amplifier and its back is appropriately bonded onto the substrate 10, electrical continuity is established between the IC3Q and its peripheral circuits by so-called wire bonding using a wire 50.

〔発明が解決しようとする問題点〕[Problem that the invention seeks to solve]

こうしたワイヤボンディングによる接続は、高密度配線
を実現する上でこれまで頻繁にとられてきた手法ではあ
るが、第5図にも示されるようをここの接続方法では、
ワイヤ50の高さα(通常数量となる)によっておのず
と基板10の上面から上記保護膜60の上面までの高さ
も高くなることから、特にここで示したような密着型イ
メージセンサにおいては、 ■ 受光部20の原稿への密着化の妨げとなる。
Connections using wire bonding have been frequently used to achieve high-density wiring, but as shown in Figure 5, this connection method
Since the height α (normal quantity) of the wire 50 naturally increases the height from the top surface of the substrate 10 to the top surface of the protective film 60, especially in a contact type image sensor as shown here, ■ Light reception This prevents the portion 20 from coming into close contact with the original.

■ 装置自体の小゛型化、薄型化にも支障を来たす。■ It also poses a problem in making the device itself smaller and thinner.

といった不都合を招くこととなっていた。This would lead to such inconvenience.

また、このワイヤボンディングによる接続自体、 ■ ボンディングや試験に時間がかかる(通常イメージ
センサ1本当り30分程かかる)。
In addition, the connection itself using wire bonding: (1) Bonding and testing take time (normally, it takes about 30 minutes for one image sensor).

■ 上述した保護膜60による封止の際、ワイヤ50が
倒れて短絡してしまうことがある。
(2) When sealing with the protective film 60 described above, the wire 50 may fall down and cause a short circuit.

等々の問題をかかえていることから、適用装置の量産化
、ひいては低価格化も難しかった。
Due to these problems, it was difficult to mass-produce the applicable equipment, and furthermore, it was difficult to lower the price.

こうした実情はサーマルヘッドなどにおいても共通する
This situation is also common in thermal heads and the like.

〔発明の効果〕〔Effect of the invention〕

このように、この発明にかかる密着型イメージセンサま
たはサーマルヘッド等の駆動装置によれば、これら密着
型イメージセンサやサーマルヘッド等の駆動部を確実に
薄くすることができ、ひいてはこれら密着型イメージセ
ンサの受光部やサーマルヘッドの発熱部等のそれぞれ原
稿や記録用紙等に対する密着度の向上および適用装置の
更にの小型化、薄型化を図ることができる。
As described above, according to the driving device for a contact type image sensor or a thermal head, etc., according to the present invention, the driving portion of the contact type image sensor or thermal head, etc. can be reliably made thinner, and as a result, these contact type image sensors It is possible to improve the degree of adhesion of the light-receiving section and the heat-generating section of the thermal head to the original, recording paper, etc., and to further reduce the size and thickness of the applied device.

また、ICの実装にかかる時間が著しく短縮されるとと
もにこの電気的信頼性も向上することから、いわゆる良
い製品を低コストで提供することができるようになる。
Furthermore, since the time required for IC mounting is significantly shortened and the electrical reliability is improved, so-called good products can be provided at low cost.

〔実施例〕〔Example〕

第1図および第2図に、この発明にかかる駆動装置の一
実施例を示す。ただし、この実施側番こおいても密着型
イメージセンサの駆動装置を例にとっており、これら第
1図および第2図のうち、第1図は同密着型イメージセ
ンサの部分平面構成を、また第2図は第1図のB−B’
線部における断面構成をそれぞれ示している。また、こ
れら第1図および第2図ζこおいて、先の第4図および
第5図に示した部所と同一の部所にはそれぞれ同一の番
号を付して示しており、重複する説明は省略する。
FIG. 1 and FIG. 2 show an embodiment of a drive device according to the present invention. However, this implementation example also takes the drive device of a contact type image sensor, and of these Figures 1 and 2, Figure 1 shows the partial planar configuration of the same contact type image sensor, and Figure 2 is BB' in Figure 1.
The cross-sectional configuration at each line portion is shown. In addition, in these Figures 1 and 2 ζ, parts that are the same as those shown in Figures 4 and 5 are given the same numbers, and there are no overlaps. Explanation will be omitted.

さてこの実施例において、70は異方導電性フィルムで
あり、これら第1図および第2図にも示すようにこの実
施例では、フェースダウンした工C30を該異方導電性
フィルム70を介して基板10に実装するようにしてい
る。すなわち、受光部20から引き出される配線パター
ン(先の配線パターン21とはパターンが異るからこれ
を22とする)、および制御配線部40から引き出され
る配線パターン(これも先の配線パターン41とはパタ
ーンが異るからこれを42とする)は、IC30のそれ
ぞれ回路構成上対応するボンディングパッド31の位置
まで引き延ばされて配され、加熱定着された上記異方導
電性フィルム70内の金属粒子を通じてIC3Qのこれ
ら対応するボンディングパッド31との電気的接続がな
されるようになっている。ここで、この異方導電性フィ
ルムとは、雑誌「電子技術」の第26巻第7号119ペ
ージ〜121ページにある項目名「異方性導電膜」や雑
誌「日経エレクトロニクス」の1984゜7.16号1
02ページ〜104ページにある項目名「LsIチップ
やパッケージを熱圧着で一括接続する導電性ゴム・コネ
クタ」などにおいて周知のように、熱可塑性または熱硬
化性の樹脂フィルムやゴムフィルムの中に金属の微粒子
が一様に分散された構造をもったもので、この実施例の
ように該異方導電性フィルム70を基板10とIC30
との間に介在せしめて、同フィルム70を挟む方向に加
圧しながらこれを所定の温度(フィルム材のみ、あるい
はフィルム材および金属粒子が共に溶ける温度)まで加
熱すると、電極部分すなわちIC3Qの各ボンディング
パッド31とこれに対向する配線パターン22.42の
各先端部分とでは、この間の上記金属粒子あるいは溶融
金属粒子がこれらパッド31や配線パターン22.42
の先端部分によって加圧されてこれら金属部分に共通に
介在することから、これら対向する電極の間に電気的導
通がとられるようになり、他の部分すなわち上記ボンデ
ィングパッド31の各間の部分とこれに対向するプリン
ト配線のなされない基板10の表面部分とでは、上記配
線パターン22゜42の先端部分とこの基板面と段差に
よって上記金属粒子のフィルム内における充填密度が下
がること、および同フィルム材自身の絶縁性によって電
気的に絶縁される。こうして実装されたIC3Qを含ん
で構成されるこの密着型イメージセンサの駆動部は、第
2図によっても明らかなようにその基板10面からの高
さがほぼ該IC30自身の厚さによって決定されるよう
になり、保護J[60の厚さを含めても、第5図に示し
た従来の同イメージセンサの駆動部と比較して大幅に薄
型化される。
In this embodiment, 70 is an anisotropic conductive film, and as shown in FIGS. 1 and 2, in this embodiment, the face-down C30 is It is mounted on the board 10. That is, the wiring pattern drawn out from the light receiving section 20 (this is called 22 because the pattern is different from the previous wiring pattern 21), and the wiring pattern drawn out from the control wiring section 40 (this is also different from the previous wiring pattern 41). 42) are metal particles in the anisotropic conductive film 70 that are stretched and arranged to the positions of the bonding pads 31 corresponding to each circuit configuration of the IC 30 and fixed by heat. The IC3Q is electrically connected to these corresponding bonding pads 31 through these. Here, this anisotropic conductive film refers to the item name "anisotropic conductive film" in the magazine "Electronic Technology" Vol. .16 No. 1
As is well-known in the item title ``Conductive rubber connector for collectively connecting LSI chips and packages by thermocompression bonding'' on pages 02 to 104, there is metal in a thermoplastic or thermosetting resin film or rubber film. The anisotropically conductive film 70 has a structure in which fine particles of
When the film 70 is heated to a predetermined temperature (temperature at which only the film material or both the film material and metal particles melt) while applying pressure in the sandwiching direction, each bonding of the electrode part, that is, IC3Q Between the pad 31 and each tip of the wiring pattern 22.42 facing thereto, the metal particles or molten metal particles between these pads 31 and the wiring patterns 22.42
Since it is pressurized by the tip of the metal part and commonly interposed between these metal parts, electrical continuity is established between these opposing electrodes, and the other part, that is, the part between each of the bonding pads 31, With respect to the opposing surface portion of the substrate 10 on which no printed wiring is formed, the packing density of the metal particles in the film is reduced due to the level difference between the tip portion of the wiring pattern 22° 42 and the surface of the substrate, and the film material It is electrically isolated by its own insulating properties. As is clear from FIG. 2, the height of the drive unit of this contact type image sensor including the IC3Q mounted in this way from the surface of the substrate 10 is determined approximately by the thickness of the IC30 itself. Even including the thickness of the protection J[60, the drive section of the conventional image sensor shown in FIG. 5 is significantly thinner.

以下、第3図を参照して、こうした密着型イメージセン
サへの上記異方導電性フィルム70を用いたIC30の
実装方法を順次具体的に説明する。
Hereinafter, with reference to FIG. 3, a method for mounting the IC 30 on such a contact type image sensor using the anisotropic conductive film 70 will be explained in detail.

1)、絶縁基板10の表面に、前記配線パターン22お
よび42を形成する。この際、これら配線パターン22
および42は、同第3図に示すようにIC3Qの各ボン
ディングパッド31とそれぞれ対応する位置まで引き延
ばされ、さらにその先端部もこれらボンディングパッド
31の形状に対応するようリソグラフィーおよびエツチ
ング−こより加工されるとする。
1) The wiring patterns 22 and 42 are formed on the surface of the insulating substrate 10. At this time, these wiring patterns 22
and 42 are extended to positions corresponding to the respective bonding pads 31 of the IC3Q, as shown in FIG. Suppose that it is done.

2)、こうして形成された配線パターン22および42
の上にこの各先端部を覆い得る大きさに切断した上記異
方導電性フィルム70を敷設する。
2) The wiring patterns 22 and 42 thus formed
The above-mentioned anisotropic conductive film 70 cut into a size that can cover each tip portion is placed on top of the anisotropic conductive film 70.

なおこの際、該異方導電性フィルム70を簡易的に貼着
するような手法をとってもよい。
Note that at this time, a method of simply attaching the anisotropically conductive film 70 may be used.

3)、この敷設された異方導電性フィルム70の上にI
C3Qをフェースダウンして配設し、この各ボンディン
グパッド31と上記配線パターン22および42のそれ
ぞれ電気的に対応する先端部とが正確に対向するよう目
合せする。このIC3Qの配設置こ際しても、上記同様
簡易的lここれを貼着するようにしてもよい。
3) I on this laid anisotropic conductive film 70
C3Q is disposed face down and aligned so that each bonding pad 31 and the electrically corresponding tips of the wiring patterns 22 and 42 are accurately opposed to each other. When arranging this IC3Q, it is also possible to simply attach it in the same manner as described above.

4)、最後に、こうして積み重ねた異方導電性フィルム
70およびIC3Qをホットプレスにより基板10iこ
加熱圧着する。なおこの際、加熱はIC3Qを保護する
ために基板10の下方から行うよう番こする。
4) Finally, the anisotropically conductive film 70 and IC3Q stacked in this way are heated and pressed onto the substrate 10i using a hot press. At this time, heating is performed from below the substrate 10 in order to protect the IC3Q.

以上番こよって、第1図および第2図に示したようなI
C3Qの実装を完了する。保IU[60はこの後適宜ζ
こ成膜すればよい。
Therefore, the I
Complete C3Q implementation. Ho IU [60 will be adjusted accordingly from now on]
This film should be formed.

なお、図示および詳細な説明は割愛するが、感熱プリン
タ等に用いられるサーマルヘッドやマグネットグラフィ
ー等のヘッド部においても、基板上の基本的な構成は上
述したイメージセンサと類似しており、この発明を適用
することによって前述同様の効果を得ることができる。
Although illustrations and detailed explanations are omitted, the basic structure on the substrate is similar to the above-mentioned image sensor in the thermal head used in thermal printers, magnetography, etc., and the present invention By applying this, the same effect as described above can be obtained.

ところで、上記の異方導電性フィルム70であるが、実
用上その主な特性は次のようであることが望ましい。
By the way, the above-mentioned anisotropic conductive film 70 preferably has the following main characteristics in practical terms.

まずフィルム材に関していえば、 0 融点が150°C以下であること。First, regarding film materials, 0 The melting point is 150°C or less.

o 1010Ω以上の電気絶縁性を有すること。o Must have electrical insulation of 1010Ω or more.

0 500g/C7+1(25℃)以上+7)m着力ヲ
有tルcと。
0 500g/C7+1 (25℃) or more +7)m adhesion strength.

0 キシレン、トルエン、アセトン、エーテル、アルコ
ール等の有機溶媒、および酸、アルカリ等の無機溶媒に
対して耐溶媒性が高いこと。
0 High solvent resistance to organic solvents such as xylene, toluene, acetone, ether, and alcohol, and inorganic solvents such as acids and alkalis.

が望まれる。こうした意味で同フィルム材として好まし
い材料としては、ビニル系樹脂(例えばスチレン−ブタ
ジエン−ラバー(SBR)など)やポリアミド、ポリエ
ステノペポリカーボネート、ポリアセタール、アイオノ
マー樹脂、ポリエーテルスルオン、フッ化樹脂、繊維素
系樹脂等の熱硬化性樹脂、あるいはフェノール樹脂やエ
リヤ樹脂、メラミン樹脂、アリル樹脂、フラン樹脂、不
飽和ポリエステル樹脂、エポキシ樹脂、シリコン樹脂、
ポリイミドポリウレタン等の熱硬化性樹脂がある。
is desired. In this sense, preferred materials for the film material include vinyl resins (for example, styrene-butadiene-rubber (SBR), etc.), polyamides, polyester polycarbonates, polyacetals, ionomer resins, polyether sulfones, fluorinated resins, and cellulose resins. thermosetting resins such as resins, phenolic resins, eria resins, melamine resins, allyl resins, furan resins, unsaturated polyester resins, epoxy resins, silicone resins,
There are thermosetting resins such as polyimide polyurethane.

また、このフィルム材の中に分散される金属粒子に関し
ていえば、 0 融点が150℃以下であること。
Regarding the metal particles dispersed in this film material, the melting point must be 150°C or lower.

0 導電性が高いこと。0 High conductivity.

等が主に望まれることから、この材料としては低融点ハ
ンダの微粒子が好適であるが、他に、ニッケルや金、白
金、銅、銀、アルミニウム等の金属微粒子も有効である
(これらの場合、融点は150℃以上であってもよい)
。特にこの粒径を25μm以下(20/Jm±5μm以
下)とすれば、上述した密着型イメージセンサやサーマ
ルヘッドを駆動するICの配線分解能を20本/順以上
とすることもでき、更に同駆動部の小型化を図ることが
できるようになる。
etc., so fine particles of low melting point solder are suitable as this material, but fine particles of metals such as nickel, gold, platinum, copper, silver, aluminum, etc. are also effective (in these cases , the melting point may be 150°C or higher)
. In particular, if the particle size is set to 25 μm or less (20/Jm±5 μm or less), the wiring resolution of the IC that drives the above-mentioned contact-type image sensor or thermal head can be increased to 20 wires/order or more, and the same drive This makes it possible to downsize the unit.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図はこの発明にかかる密着型イメージセンサの駆動
装置の一実施例を示す部分平面図、第2図は第1図のB
−B’線部における同装置の断面構造を示す断面図、第
3図はこれら第1図および第2図に示した実施例装置の
製造方法を示す斜視図、第4図は従来の密着型イメージ
センサの駆動装置構造を示す部分平面図、第5図は第4
図のA−A′線部における同装置の断面構造を示す断面
図である。 10・−絶縁基板、−20・・・受光部、21,22゜
41.42・・・配線パターン、30・・・rc、31
・・・ボンディングパッド、40・・・制御配線部、5
0・・・ボンディングワイヤ、60・・・保護膜、70
・・・異方導電性フィルム 第1図 第2図 第3図 第4図 第5図
FIG. 1 is a partial plan view showing an embodiment of a driving device for a contact type image sensor according to the present invention, and FIG.
3 is a sectional view showing the cross-sectional structure of the device taken along the line -B', FIG. 3 is a perspective view showing the manufacturing method of the embodiment device shown in FIGS. 1 and 2, and FIG. 4 is a conventional close-contact type A partial plan view showing the structure of the drive device of the image sensor, FIG.
FIG. 2 is a cross-sectional view showing the cross-sectional structure of the device taken along line A-A' in the figure. 10... Insulating substrate, -20... Light receiving section, 21, 22° 41.42... Wiring pattern, 30... rc, 31
...Bonding pad, 40...Control wiring section, 5
0... Bonding wire, 60... Protective film, 70
...Anisotropic conductive film Figure 1 Figure 2 Figure 3 Figure 4 Figure 5

Claims (5)

【特許請求の範囲】[Claims] (1)密着型イメージセンサの受光部またはサーマルヘ
ッドの発熱部等が配される基板と同一の基板上にIC化
されて配されてこれら密着型イメージセンサまたはサー
マルヘッド等を駆動する密着型イメージセンサまたはサ
ーマルヘッド等の駆動装置において、 前記基板上の前記ICと電気的に接続される部分の配線
パターンを同ICのボンディングパッドパターンに対応
せしめ、該ICを、そのボンディングパッドが異方導電
性フィルムを介してそれぞれ前記基板上の対応するプリ
ントパターンに直接接続されるよう実装したことを特徴
とする密着型イメージセンサまたはサーマルヘッド等の
駆動装置。
(1) A contact image that is arranged as an IC on the same substrate as the light receiving part of the contact image sensor or the heat generating part of the thermal head and drives the contact image sensor or thermal head. In a driving device such as a sensor or a thermal head, a wiring pattern of a portion of the substrate electrically connected to the IC is made to correspond to a bonding pad pattern of the same IC, and the bonding pad of the IC is anisotropically conductive. A driving device for a contact image sensor, a thermal head, or the like, characterized in that the drive device is mounted so as to be directly connected to the corresponding printed pattern on the substrate through a film.
(2)前記異方導電性フィルムとして、熱可塑性または
熱硬化性の樹脂フィルム内に粒径25μm以下の金属粒
子を均等に分散したものを用いる特許請求の範囲第(1
)項記載の密着型イメージセンサまたはサーマルヘッド
等の駆動装置。
(2) The anisotropically conductive film is a thermoplastic or thermosetting resin film in which metal particles having a particle size of 25 μm or less are evenly dispersed.
) A driving device for a contact type image sensor or a thermal head, etc., as described in item 2.
(3)前記熱可塑性樹脂フィルムは、スチレン−ブタジ
エン−ラバー等のビニル系樹脂、またはポリアミド、ま
たはポリエステル、またはポリカーボネート、またはポ
リアセタール、またはアイオノマー樹脂、またはポリエ
ーテルスルオン、またはフッ化樹脂、または繊維素系樹
脂からなる特許請求の範囲第(2)項記載の密着型イメ
ージセンサまたはサーマルヘッド等の駆動装置。
(3) The thermoplastic resin film is made of vinyl resin such as styrene-butadiene-rubber, polyamide, polyester, polycarbonate, polyacetal, ionomer resin, polyether sulfone, fluorinated resin, or cellulose. A driving device for a contact type image sensor or a thermal head, etc., according to claim (2), which is made of a resin.
(4)前記熱硬化性樹脂フィルムは、フェノール樹脂、
またはエリヤ樹脂、またはメラミン樹脂、またはアリル
樹脂、またはフラン樹脂、または不飽和ポリエステル樹
脂、またはエポキシ樹脂、またはシリコン樹脂、または
ポリイミド、またはポリウレタンからなる特許請求の範
囲第(2)項記載の密着型イメージセンサまたはサーマ
ルヘッド等の駆動装置。
(4) The thermosetting resin film includes a phenol resin,
or an area resin, or a melamine resin, or an allyl resin, or a furan resin, or an unsaturated polyester resin, or an epoxy resin, or a silicone resin, or a polyimide, or a polyurethane, and the adhesive type according to claim (2). Drive device for image sensor or thermal head, etc.
(5)前記金属粒子は、ハンダ、またはニッケル、また
は金、または白金、または銅、または銀、またはアルミ
ニウム等の金属および金属化合物からなる特許請求の範
囲第(2)項記載の密着型イメージセンサまたはサーマ
ルヘッド等の駆動装置。
(5) The contact image sensor according to claim (2), wherein the metal particles are made of a metal or a metal compound such as solder, nickel, gold, platinum, copper, silver, or aluminum. Or a driving device such as a thermal head.
JP60026060A 1985-02-13 1985-02-13 Anisotropically conductive film, semiconductor device using the same, and method for manufacturing the same Expired - Fee Related JPH081768B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60026060A JPH081768B2 (en) 1985-02-13 1985-02-13 Anisotropically conductive film, semiconductor device using the same, and method for manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60026060A JPH081768B2 (en) 1985-02-13 1985-02-13 Anisotropically conductive film, semiconductor device using the same, and method for manufacturing the same

Publications (2)

Publication Number Publication Date
JPS61186061A true JPS61186061A (en) 1986-08-19
JPH081768B2 JPH081768B2 (en) 1996-01-10

Family

ID=12183137

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60026060A Expired - Fee Related JPH081768B2 (en) 1985-02-13 1985-02-13 Anisotropically conductive film, semiconductor device using the same, and method for manufacturing the same

Country Status (1)

Country Link
JP (1) JPH081768B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08330712A (en) * 1995-06-01 1996-12-13 Teikoku Tsushin Kogyo Co Ltd How to attach chip type electronic components to the board

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51100679A (en) * 1975-03-03 1976-09-06 Suwa Seikosha Kk
JPS51115773A (en) * 1975-03-04 1976-10-12 Seiko Epson Corp Connected wiring system of hybrid ic
JPS57187964A (en) * 1981-05-15 1982-11-18 Toshiba Corp Hybrid integrated circuit
JPS5815243A (en) * 1981-07-20 1983-01-28 Seiko Epson Corp Mounting structure for semiconductor integrated circuit
JPS59195837A (en) * 1983-04-21 1984-11-07 Sharp Corp Chip bonding method for large-scale integrated circuit
JPS60193353A (en) * 1984-03-15 1985-10-01 Hitachi Chem Co Ltd Connection of electronic parts
JPS60225438A (en) * 1984-04-23 1985-11-09 Seiko Epson Corp IC mounting structure

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51100679A (en) * 1975-03-03 1976-09-06 Suwa Seikosha Kk
JPS51115773A (en) * 1975-03-04 1976-10-12 Seiko Epson Corp Connected wiring system of hybrid ic
JPS57187964A (en) * 1981-05-15 1982-11-18 Toshiba Corp Hybrid integrated circuit
JPS5815243A (en) * 1981-07-20 1983-01-28 Seiko Epson Corp Mounting structure for semiconductor integrated circuit
JPS59195837A (en) * 1983-04-21 1984-11-07 Sharp Corp Chip bonding method for large-scale integrated circuit
JPS60193353A (en) * 1984-03-15 1985-10-01 Hitachi Chem Co Ltd Connection of electronic parts
JPS60225438A (en) * 1984-04-23 1985-11-09 Seiko Epson Corp IC mounting structure

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08330712A (en) * 1995-06-01 1996-12-13 Teikoku Tsushin Kogyo Co Ltd How to attach chip type electronic components to the board

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