JPS59172648A - Mask for use in x-ray exposure - Google Patents
Mask for use in x-ray exposureInfo
- Publication number
- JPS59172648A JPS59172648A JP58048163A JP4816383A JPS59172648A JP S59172648 A JPS59172648 A JP S59172648A JP 58048163 A JP58048163 A JP 58048163A JP 4816383 A JP4816383 A JP 4816383A JP S59172648 A JPS59172648 A JP S59172648A
- Authority
- JP
- Japan
- Prior art keywords
- pattern
- thin film
- film
- ray exposure
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010408 film Substances 0.000 claims abstract description 22
- 239000010409 thin film Substances 0.000 claims abstract description 18
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 8
- 239000010703 silicon Substances 0.000 claims abstract description 8
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 18
- 239000010931 gold Substances 0.000 claims description 18
- 229910052737 gold Inorganic materials 0.000 claims description 18
- 238000010521 absorption reaction Methods 0.000 claims description 4
- 229910052582 BN Inorganic materials 0.000 claims description 2
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims description 2
- 239000000758 substrate Substances 0.000 abstract description 18
- 238000004519 manufacturing process Methods 0.000 abstract description 9
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract description 8
- 229910052710 silicon Inorganic materials 0.000 abstract description 7
- 238000001020 plasma etching Methods 0.000 abstract description 3
- 238000007598 dipping method Methods 0.000 abstract description 2
- 238000007740 vapor deposition Methods 0.000 abstract description 2
- 230000015556 catabolic process Effects 0.000 abstract 1
- 239000002904 solvent Substances 0.000 abstract 1
- 229920001721 polyimide Polymers 0.000 description 6
- 238000007747 plating Methods 0.000 description 4
- 238000005530 etching Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の技術分野〕
この発明はＸ線露光用マスク、特に例えば１μｍ程度の
極めて微細なパターン形成に適用し得るＸ線露光用マス
クに関するものである。DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to an X-ray exposure mask, and particularly to an X-ray exposure mask that can be applied to forming extremely fine patterns of, for example, about 1 μm.
第１図ないし第５図に従来例によるこの種のＸ線露光用
マスクをその製造工程順に示しである。1 to 5 show conventional X-ray exposure masks of this type in the order of their manufacturing steps.
これらの各図において、符号（１）は支持基板としての
シリコン基板、（２）はＸ線を透過し易い無機物薄膜、
すなわち透過基板となるシリコン窒化膜、（３）はＸ線
吸収層となる金の薄膜、（４）はポリイミド膜、（５）
はレジストパターンである。In each of these figures, symbol (1) is a silicon substrate as a supporting substrate, (2) is an inorganic thin film that easily transmits X-rays,
That is, a silicon nitride film that becomes a transparent substrate, (3) a thin gold film that becomes an X-ray absorption layer, (4) a polyimide film, and (5)
is a resist pattern.
こ＼でこの従来例によるＸ線露光用マスクの製造は、ま
ず第１図に示すように、シリコン基板（１）上に厚さ１
〜２μｍ程度のシリコン窒化膜（２）、メッキベースと
しての厚さ数１００Ａの金膜（３＆）、リフトオフプロ
セスの中間層となる厚さ１μｍ程度のポリイミドＭ（４
）を順次に形成させ、かっこのポリイミド膜（４）上に
所望のレジストパターン（５）を形成させる。To manufacture this conventional X-ray exposure mask, first, as shown in FIG.
~2 μm thick silicon nitride film (2), several 100A thick gold film (3 &) as a plating base, and about 1 μm thick polyimide M (4) to be the intermediate layer in the lift-off process.
) are sequentially formed, and a desired resist pattern (5) is formed on the polyimide film (4) in the parentheses.
ついで第２図にみられるように、リアクティブイオンエ
ッチなどによりポリイミド膜（４）をエツチングしたの
ち、露出したメッキベースとしての金膜（３ａ）部分に
、第３図に示すように、ポリイミド膜（４）と同程度の
膜厚で金メッキを行なって金の薄膜（３）を得る。そし
てさらにこれを有機溶剤などに浸漬して、第４図に示す
ように、ポリイミド膜（４）およびレジストパターン（
５）を除去し、最後に金のライトエツチングを行なって
メッキベース部分の金膜（３ａ）を除去し、かつ裏面側
からＫＯＨ溶液によりシリコン基板（１）のエツチング
をなして、第５図に示す通りのＸ線露光用マスクを完成
するのである。Next, as shown in Fig. 2, after etching the polyimide film (4) by reactive ion etching, etc., a polyimide film is applied to the exposed gold film (3a) as a plating base, as shown in Fig. 3. Gold plating is performed to the same thickness as (4) to obtain a thin gold film (3). Then, this is further immersed in an organic solvent or the like to form a polyimide film (4) and a resist pattern (
5), and finally light etching of gold is performed to remove the gold film (3a) on the plating base part, and the silicon substrate (1) is etched from the back side with a KOH solution. The X-ray exposure mask as shown is completed.
しかしてこのようにして得た従来例によるＸ線露光ｉス
クは、薄膜の透過基板（２）上に盛り上った状態でＸ線
吸収層としての金の薄膜（３）によるバタ工程も中間層
を利用するので複雑であるなどの欠点があった。However, the conventional X-ray exposure i-sk obtained in this way has an intermediate stage in which the gold thin film (3) is used as the X-ray absorbing layer in a raised state on the thin film transparent substrate (2). It has drawbacks such as complexity because it uses layers.
この発明は従来のこのような欠点に鑑み、金の薄膜パタ
ーンを透過基板表面に埋め込むことによって、その変形
、破損を阻止し、併せてその製造工程を簡略化させたも
のである。In view of these conventional drawbacks, the present invention embeds a gold thin film pattern on the surface of a transparent substrate to prevent its deformation and breakage, and also to simplify the manufacturing process.
以下、この発明に係るＸ線露光用マスクの一実施例につ
き第６図ないし第９図を参照して詳細に説明する。Hereinafter, one embodiment of the X-ray exposure mask according to the present invention will be described in detail with reference to FIGS. 6 to 9.
これらの第６図ないし第９図はこの実施例にょるＸ線露
光用マスクをその製造工程順に示してあり、これらの各
図においても同様に、符号（６）は支持基板としてのシ
リコン基板、（７）はＸ線を透過し易い無機物薄膜、す
なわち透過基板となるシリコン窒化膜、（８）はレジス
トパターン、（９）はＸ線吸収層となる金の薄膜である
。These FIGS. 6 to 9 show the X-ray exposure mask according to this embodiment in the order of its manufacturing process, and similarly in each of these figures, the reference numeral (6) indicates a silicon substrate as a support substrate, (7) is an inorganic thin film that easily transmits X-rays, that is, a silicon nitride film that becomes a transparent substrate, (8) is a resist pattern, and (9) is a gold thin film that becomes an X-ray absorption layer.
しかしてこの実施例によるＸ線露光用マスクの製造は、
まず第６図に示すように、シリコン基板（６）上に厚さ
２μｍ程度のシリコン窒化膜（７）を形成したのち、こ
のシリコン窒化膜（７）上に所望のレジストパターン（
８）を形成させ、こ扛を例えばＣＦ４ガス、 ０．０３
ｔｏｒｒ のリアクティブイオンエツチングによシ、
シリコン窒化膜（７）の表面に、第７図にみら扛る通り
、深さ１μｍ程度のパターン溝（ｒａ）を堀シ込んで形
成する。However, the production of the X-ray exposure mask according to this embodiment is as follows:
First, as shown in FIG. 6, a silicon nitride film (7) with a thickness of about 2 μm is formed on a silicon substrate (6), and then a desired resist pattern (
8), for example, CF4 gas, 0.03
By reactive ion etching of torr,
As shown in FIG. 7, patterned grooves (RA) with a depth of about 1 μm are formed on the surface of the silicon nitride film (7).
ついで第８図に示すように、蒸着法などによって金の薄
膜（９）を形成するが、このときパターン溝（７ａ）内
での金の薄膜（９）の膜厚は、間溝（７ａ）の深さと同
程度とし、続いてこれを有機溶剤などに浸漬してレジス
トパターン（８）を溶解することにより、同パターン（
８）およびその上の金の薄膜（９）を選択的に除去し、
かつ裏面側からＫＯＨ溶液によりシリコン基板（１）の
エツチングをなして、第９図に示す通りに透過基板表面
に金の薄膜パターンを埋め込んだＸ線露光用マスクを完
成するのである。Next, as shown in FIG. 8, a thin gold film (9) is formed by vapor deposition, etc. At this time, the thickness of the thin gold film (9) within the pattern groove (7a) is equal to that of the groove (7a). By dipping this into an organic solvent or the like to dissolve the resist pattern (8), the same pattern (8) is formed.
8) and selectively removing the gold thin film (9) thereon,
Then, the silicon substrate (1) is etched from the back side using a KOH solution to complete an X-ray exposure mask with a gold thin film pattern embedded in the surface of the transparent substrate as shown in FIG.
なお前記実施例では、Ｘ線透過基板としてシリコン窒化
膜を用いたが、ボロン窒化膜、その他の無機物薄膜を用
いてもよいことは勿論である。In the above embodiment, a silicon nitride film was used as the X-ray transparent substrate, but it goes without saying that a boron nitride film or other inorganic thin film may also be used.
以上詳述したようにこの発明によれば、Ｘ線透過基板と
なる無機物薄膜の表面にパターン溝を形成し、このパタ
ーン溝内にＸ線吸収膜としての金の薄膜を埋め込んだ構
成としたので、金の薄膜パターンの変形、破損がなくな
り、従ってマスクの副次性を向上し得ると共に、その製
造工程をも簡略化できるなどの優れた特長を有するもの
である。As detailed above, according to the present invention, a pattern groove is formed on the surface of an inorganic thin film serving as an X-ray transmitting substrate, and a thin gold film serving as an X-ray absorbing film is embedded in this pattern groove. This method has excellent features such as eliminating deformation and breakage of the gold thin film pattern, thereby improving the secondary properties of the mask and simplifying the manufacturing process.
第１図ないし第５図は従来例によるＸ線露光用マスクを
製造工程順に示す断面図、第６図ないし第９図はこの発
明の一実施例によるＸ線露光用マスクを製造工程順に示
す断面図である。
（６）・・・・シ９ ” ：４Ｌ （７）・・・・シリ
コン窒化膜（無機物薄膜）、（７ａ）・′・・・パター
ンＷ、（８）・・・・レジストパターン、（９）・・・
・金の薄膜（Ｘ線吸収層）。
代理人 葛 野 信 −1 to 5 are cross-sectional views showing a conventional X-ray exposure mask in the order of manufacturing steps, and FIGS. 6 to 9 are cross-sectional views showing an X-ray exposure mask according to an embodiment of the present invention in the order of manufacturing steps. It is a diagram. (6)...Si9'':4L (7)...Silicon nitride film (inorganic thin film), (7a)...Pattern W, (8)...Resist pattern, (9 )...
・Thin gold film (X-ray absorption layer). Agent Shin Kuzuno −
Claims (1)
い無機物薄膜を有し、この無機物薄膜の表面に所望のパ
ターン溝を形成すると共に、溝内にＸ線吸収層となる金
の薄膜を埋め込んで構成したことを特徴とするＸ線露光
用マスク。It has an inorganic thin film such as silicon or boron nitride film that easily transmits X-rays, and a desired pattern groove is formed on the surface of this inorganic thin film, and a thin gold film that becomes an X-ray absorption layer is embedded in the groove. An X-ray exposure mask characterized by comprising:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58048163A JPS59172648A (en) | 1983-03-22 | 1983-03-22 | Mask for use in x-ray exposure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58048163A JPS59172648A (en) | 1983-03-22 | 1983-03-22 | Mask for use in x-ray exposure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS59172648A true JPS59172648A (en) | 1984-09-29 |
Family
ID=12795710
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58048163A Pending JPS59172648A (en) | 1983-03-22 | 1983-03-22 | Mask for use in x-ray exposure |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59172648A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5087535A (en) * | 1986-02-28 | 1992-02-11 | Sharp Kabushiki Kaisha | Method of manufacturing photo-mask and photo-mask manufactured thereby |
-
1983
- 1983-03-22 JP JP58048163A patent/JPS59172648A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5087535A (en) * | 1986-02-28 | 1992-02-11 | Sharp Kabushiki Kaisha | Method of manufacturing photo-mask and photo-mask manufactured thereby |
| EP0533217A2 (en) * | 1986-02-28 | 1993-03-24 | Sharp Kabushiki Kaisha | Photo-mask |
| US5457006A (en) * | 1986-02-28 | 1995-10-10 | Sharp Kabushiki Kaisha | Method of manufacturing photo-mask and photo-mask manufactured thereby |
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