JPS5789257A - Manufacture of insulation gate type field effect transistor - Google Patents
Manufacture of insulation gate type field effect transistorInfo
- Publication number
- JPS5789257A JPS5789257A JP55166084A JP16608480A JPS5789257A JP S5789257 A JPS5789257 A JP S5789257A JP 55166084 A JP55166084 A JP 55166084A JP 16608480 A JP16608480 A JP 16608480A JP S5789257 A JPS5789257 A JP S5789257A
- Authority
- JP
- Japan
- Prior art keywords
- region
- insulation film
- thick
- intended
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000009413 insulation Methods 0.000 title abstract 9
- 230000005669 field effect Effects 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000010408 film Substances 0.000 abstract 10
- 239000012535 impurity Substances 0.000 abstract 2
- 239000002184 metal Substances 0.000 abstract 2
- 238000010030 laminating Methods 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- 239000010409 thin film Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
Abstract
PURPOSE:To make it possible to form each region of MOS simultaneously by introducing impurity through a thick insulation film formed in the intended region of an off-set gate and a thin film formed in the intended regions of a source and drain on a semiconductor substrate. CONSTITUTION:An insulation film 42 of 1mu thick is formed in the region where no element region is to be formed and an insulation film 43 of 400-1,000Angstrom thick is formed in the region where an element region is to be formed. After laminating over the entire surface a metal film 44 which is to be a gate electrode and an insulation film 44, and an opening is made in the intended offset gate region and thick insulation films 481 and 482 are formed. The metal film 44 and the insulation film 45 in the intended regions for the source and the drain are removed. When the impurity is introduced, the source region 50 and the drain region 49 are formed through the thin insulation film and the offset regions 46 and 48 are formed through the thick insulation film 481 and 482.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55166084A JPS5789257A (en) | 1980-11-25 | 1980-11-25 | Manufacture of insulation gate type field effect transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55166084A JPS5789257A (en) | 1980-11-25 | 1980-11-25 | Manufacture of insulation gate type field effect transistor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5789257A true JPS5789257A (en) | 1982-06-03 |
| JPH0126192B2 JPH0126192B2 (en) | 1989-05-22 |
Family
ID=15824681
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP55166084A Granted JPS5789257A (en) | 1980-11-25 | 1980-11-25 | Manufacture of insulation gate type field effect transistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5789257A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6064473A (en) * | 1983-09-20 | 1985-04-13 | Seiko Epson Corp | Mos type transistor |
-
1980
- 1980-11-25 JP JP55166084A patent/JPS5789257A/en active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6064473A (en) * | 1983-09-20 | 1985-04-13 | Seiko Epson Corp | Mos type transistor |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0126192B2 (en) | 1989-05-22 |
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