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JPS5784180A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5784180A
JPS5784180A JP55160266A JP16026680A JPS5784180A JP S5784180 A JPS5784180 A JP S5784180A JP 55160266 A JP55160266 A JP 55160266A JP 16026680 A JP16026680 A JP 16026680A JP S5784180 A JPS5784180 A JP S5784180A
Authority
JP
Japan
Prior art keywords
electrode
grounding
substrate
source
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55160266A
Other languages
Japanese (ja)
Inventor
Toshiaki Saito
Yutaka Hirano
Nobutoshi Fukuden
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP55160266A priority Critical patent/JPS5784180A/en
Publication of JPS5784180A publication Critical patent/JPS5784180A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes

Landscapes

  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE:To obtain a source grounding capacitor which has a small occupied area and small effect of inductance component by a method wherein a souce electrode is formed or a dieletric materal film formed on a grounding eletrode formed on an insulative substrate. CONSTITUTION:A grounding electrode 13 is formed on an insulative GaAs substrate 11 and a source electrode 15 is formed on a dielectric material film 14 whic is formed on the grounding electrode 13. A gate electrode 17 and a drain electrode 16 are formed on other part of the substrate 11, so that a field-effect transistor is composed. The grounding electrode 13 is drawn out to the back surface of the substrate by a conductive connecting film 13a. When the substrate 11 is fitted on a grounding conductor such as a heats ink HS the grounding electrode can automatically be held at the earth potential. With above cofiguration, as the source electrode 15 and a source grounding capacitor are formed in one body, an excess occupied area is not necessary and, as wire bonding is not necessary, effect of inductance component is eliminated.
JP55160266A 1980-11-14 1980-11-14 Semiconductor device Pending JPS5784180A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55160266A JPS5784180A (en) 1980-11-14 1980-11-14 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55160266A JPS5784180A (en) 1980-11-14 1980-11-14 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5784180A true JPS5784180A (en) 1982-05-26

Family

ID=15711277

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55160266A Pending JPS5784180A (en) 1980-11-14 1980-11-14 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5784180A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4550333A (en) * 1983-09-13 1985-10-29 Xerox Corporation Light emitting semiconductor mount
EP0905791A2 (en) * 1997-09-25 1999-03-31 Nec Corporation Miniaturization of a semiconductor chip
CN110494973A (en) * 2017-05-17 2019-11-22 野田士克林股份有限公司 Thin film capacitor constructs and has the semiconductor device of thin film capacitor construction

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49129484A (en) * 1973-04-11 1974-12-11
JPS53124986A (en) * 1977-04-07 1978-10-31 Mitsubishi Electric Corp Semiconductor device
JPS5588366A (en) * 1978-12-27 1980-07-04 Fujitsu Ltd Semiconductor device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49129484A (en) * 1973-04-11 1974-12-11
JPS53124986A (en) * 1977-04-07 1978-10-31 Mitsubishi Electric Corp Semiconductor device
JPS5588366A (en) * 1978-12-27 1980-07-04 Fujitsu Ltd Semiconductor device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4550333A (en) * 1983-09-13 1985-10-29 Xerox Corporation Light emitting semiconductor mount
EP0905791A2 (en) * 1997-09-25 1999-03-31 Nec Corporation Miniaturization of a semiconductor chip
EP0905791A3 (en) * 1997-09-25 1999-09-08 Nec Corporation Miniaturization of a semiconductor chip
US6222266B1 (en) 1997-09-25 2001-04-24 Nec Corporation Miniaturization of a semiconductor chip
CN110494973A (en) * 2017-05-17 2019-11-22 野田士克林股份有限公司 Thin film capacitor constructs and has the semiconductor device of thin film capacitor construction

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