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JPS5734368A - Protective diode for insulated gate field-effect transistor - Google Patents

Protective diode for insulated gate field-effect transistor

Info

Publication number
JPS5734368A
JPS5734368A JP10945980A JP10945980A JPS5734368A JP S5734368 A JPS5734368 A JP S5734368A JP 10945980 A JP10945980 A JP 10945980A JP 10945980 A JP10945980 A JP 10945980A JP S5734368 A JPS5734368 A JP S5734368A
Authority
JP
Japan
Prior art keywords
region
substrate
film
circuit
oxide film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10945980A
Other languages
Japanese (ja)
Inventor
Yoshiki Tanigawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Pioneer Corp
Original Assignee
Pioneer Electronic Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Pioneer Electronic Corp filed Critical Pioneer Electronic Corp
Priority to JP10945980A priority Critical patent/JPS5734368A/en
Publication of JPS5734368A publication Critical patent/JPS5734368A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/611—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using diodes as protective elements

Landscapes

  • Amplifiers (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Protection Of Static Devices (AREA)

Abstract

PURPOSE:To enable to increase a protective current as well as to obtain a low input capacity element by a method wherein a DSA type FET, consisting of a double- diffusion region and a reverse conductive region, are formed on a low density substrate and the reverse conductive region to be provided on the substrate is connected to the gate of a circuit element. CONSTITUTION:For example, the pattern of an oxide film 33 and a nitriding film 23, with which the double-diffusion region is demarcated, is formed on an N<-> substrate 13 and an N region 43 is provided using an oxide film mask 53. Then, after P regions 63 and 73 have been formed, a selective oxide layer 83 is provided using the nitriding film as a mask in such manner that the junction will be formed directly below the oxide film 33. Then, the nitriding film is removed, a gate electrode 93 contacting a region 63 is provided and grounded (to be connected to the source of FET on the circuit), and the region 73 is connected to the input gate of the circuit. As the junction capacity of the region 73 is small, input capacity can be reduced and a large current can be applied in between regions 43 and 63, thereby enabling to have the diode suitably used for a protective element.
JP10945980A 1980-08-09 1980-08-09 Protective diode for insulated gate field-effect transistor Pending JPS5734368A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10945980A JPS5734368A (en) 1980-08-09 1980-08-09 Protective diode for insulated gate field-effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10945980A JPS5734368A (en) 1980-08-09 1980-08-09 Protective diode for insulated gate field-effect transistor

Publications (1)

Publication Number Publication Date
JPS5734368A true JPS5734368A (en) 1982-02-24

Family

ID=14510764

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10945980A Pending JPS5734368A (en) 1980-08-09 1980-08-09 Protective diode for insulated gate field-effect transistor

Country Status (1)

Country Link
JP (1) JPS5734368A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6414321A (en) * 1987-07-01 1989-01-18 Toray Industries Polyester ternary conjugate fiber
JPH0319918A (en) * 1989-06-03 1991-01-29 Tongyang Nylon Co Ltd Conjugate fiber for producting extra fine fiber

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6414321A (en) * 1987-07-01 1989-01-18 Toray Industries Polyester ternary conjugate fiber
JPH0319918A (en) * 1989-06-03 1991-01-29 Tongyang Nylon Co Ltd Conjugate fiber for producting extra fine fiber

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