JPS5768016A - Gas phase growth for 3[5 group compound semiconductor - Google Patents
Gas phase growth for 3[5 group compound semiconductorInfo
- Publication number
- JPS5768016A JPS5768016A JP14335680A JP14335680A JPS5768016A JP S5768016 A JPS5768016 A JP S5768016A JP 14335680 A JP14335680 A JP 14335680A JP 14335680 A JP14335680 A JP 14335680A JP S5768016 A JPS5768016 A JP S5768016A
- Authority
- JP
- Japan
- Prior art keywords
- region
- group element
- tube
- iii
- partition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 150000001875 compounds Chemical class 0.000 title abstract 2
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 239000007789 gas Substances 0.000 abstract 4
- 150000004820 halides Chemical class 0.000 abstract 4
- 238000005192 partition Methods 0.000 abstract 3
- 239000000758 substrate Substances 0.000 abstract 3
- 229910052736 halogen Inorganic materials 0.000 abstract 2
- 150000002367 halogens Chemical class 0.000 abstract 2
- 239000000203 mixture Substances 0.000 abstract 2
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 abstract 1
- 229910000070 arsenic hydride Inorganic materials 0.000 abstract 1
- 229910052733 gallium Inorganic materials 0.000 abstract 1
- 150000002431 hydrogen Chemical class 0.000 abstract 1
- 229910052739 hydrogen Inorganic materials 0.000 abstract 1
- 239000001257 hydrogen Substances 0.000 abstract 1
- 229910000041 hydrogen chloride Inorganic materials 0.000 abstract 1
- 229910052738 indium Inorganic materials 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 229910000073 phosphorus hydride Inorganic materials 0.000 abstract 1
- 238000011144 upstream manufacturing Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02387—Group 13/15 materials
- H01L21/02392—Phosphides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/02543—Phosphides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/02546—Arsenides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14335680A JPS5768016A (en) | 1980-10-14 | 1980-10-14 | Gas phase growth for 3[5 group compound semiconductor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14335680A JPS5768016A (en) | 1980-10-14 | 1980-10-14 | Gas phase growth for 3[5 group compound semiconductor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5768016A true JPS5768016A (en) | 1982-04-26 |
| JPH0328054B2 JPH0328054B2 (ja) | 1991-04-17 |
Family
ID=15336875
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14335680A Granted JPS5768016A (en) | 1980-10-14 | 1980-10-14 | Gas phase growth for 3[5 group compound semiconductor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5768016A (ja) |
-
1980
- 1980-10-14 JP JP14335680A patent/JPS5768016A/ja active Granted
Non-Patent Citations (1)
| Title |
|---|
| JAPAN.J.APPL PHYS=1977 * |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0328054B2 (ja) | 1991-04-17 |
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