JPS575384A - Semiconductor laser device - Google Patents
Semiconductor laser deviceInfo
- Publication number
- JPS575384A JPS575384A JP8058680A JP8058680A JPS575384A JP S575384 A JPS575384 A JP S575384A JP 8058680 A JP8058680 A JP 8058680A JP 8058680 A JP8058680 A JP 8058680A JP S575384 A JPS575384 A JP S575384A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- active
- diffused
- semiconductor laser
- laser device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 239000010410 layer Substances 0.000 abstract 12
- 239000012535 impurity Substances 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 239000012141 concentrate Substances 0.000 abstract 1
- 238000002347 injection Methods 0.000 abstract 1
- 239000007924 injection Substances 0.000 abstract 1
- 239000007791 liquid phase Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 239000002344 surface layer Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/223—Buried stripe structure
- H01S5/2238—Buried stripe structure with a terraced structure
Landscapes
- Physics & Mathematics (AREA)
- Geometry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8058680A JPS575384A (en) | 1980-06-13 | 1980-06-13 | Semiconductor laser device |
US06/270,352 US4456999A (en) | 1980-06-13 | 1981-06-04 | Terrace-shaped substrate semiconductor laser |
GB8118205A GB2080014B (en) | 1980-06-13 | 1981-06-12 | Semiconductor lasers |
CA000379630A CA1180094A (en) | 1980-06-13 | 1981-06-12 | Semiconductor laser |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8058680A JPS575384A (en) | 1980-06-13 | 1980-06-13 | Semiconductor laser device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS575384A true JPS575384A (en) | 1982-01-12 |
Family
ID=13722445
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8058680A Pending JPS575384A (en) | 1980-06-13 | 1980-06-13 | Semiconductor laser device |
Country Status (4)
Country | Link |
---|---|
US (1) | US4456999A (ja) |
JP (1) | JPS575384A (ja) |
CA (1) | CA1180094A (ja) |
GB (1) | GB2080014B (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7185958B2 (en) | 2002-02-27 | 2007-03-06 | The Ohtsu Tire & Rubber Co., Ltd. | Elastic crawler |
JP2008531371A (ja) * | 2005-02-25 | 2008-08-14 | 大陸化學工業株式會社 | クローラの芯体構造 |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4581743A (en) * | 1982-06-18 | 1986-04-08 | Omron Tateisi Electronics Co. | Semiconductor laser having an inverted layer in a stepped offset portion |
GB2127218B (en) * | 1982-08-16 | 1986-05-21 | Omron Tateisi Electronics Co | Semiconductor laser |
DE3435148A1 (de) * | 1984-09-25 | 1986-04-03 | Siemens AG, 1000 Berlin und 8000 München | Laserdiode mit vergrabener aktiver schicht und mit seitlicher strombegrezung durch selbstjustierten pn-uebergang sowie verfahren zur herstellung einer solchen laserdiode |
US4785457A (en) * | 1987-05-11 | 1988-11-15 | Rockwell International Corporation | Heterostructure semiconductor laser |
DE3821775A1 (de) * | 1988-06-28 | 1990-01-11 | Siemens Ag | Halbleiterschichtstruktur fuer laserdiode mit vergrabener heterostruktur |
JP4279207B2 (ja) * | 2004-06-18 | 2009-06-17 | アルプス電気株式会社 | 入力装置およびこの入力装置を用いた表示入力装置 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS52109884A (en) * | 1976-03-11 | 1977-09-14 | Nec Corp | Stripe type hetero junction semoonductor laser |
JPS53140984A (en) * | 1977-05-13 | 1978-12-08 | Sharp Corp | Semiconductor laser element and production of the same |
JPS5518094A (en) * | 1978-07-27 | 1980-02-07 | Nec Corp | Semiconductor laser device with high optical output and horizontal fundamental mode |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS54107284A (en) * | 1978-02-10 | 1979-08-22 | Nec Corp | Semiconductor junction laser and its production |
-
1980
- 1980-06-13 JP JP8058680A patent/JPS575384A/ja active Pending
-
1981
- 1981-06-04 US US06/270,352 patent/US4456999A/en not_active Expired - Fee Related
- 1981-06-12 GB GB8118205A patent/GB2080014B/en not_active Expired
- 1981-06-12 CA CA000379630A patent/CA1180094A/en not_active Expired
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS52109884A (en) * | 1976-03-11 | 1977-09-14 | Nec Corp | Stripe type hetero junction semoonductor laser |
JPS53140984A (en) * | 1977-05-13 | 1978-12-08 | Sharp Corp | Semiconductor laser element and production of the same |
JPS5518094A (en) * | 1978-07-27 | 1980-02-07 | Nec Corp | Semiconductor laser device with high optical output and horizontal fundamental mode |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7185958B2 (en) | 2002-02-27 | 2007-03-06 | The Ohtsu Tire & Rubber Co., Ltd. | Elastic crawler |
JP2008531371A (ja) * | 2005-02-25 | 2008-08-14 | 大陸化學工業株式會社 | クローラの芯体構造 |
Also Published As
Publication number | Publication date |
---|---|
US4456999A (en) | 1984-06-26 |
CA1180094A (en) | 1984-12-27 |
GB2080014B (en) | 1984-10-03 |
GB2080014A (en) | 1982-01-27 |
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