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JPS56169385A - Manufacture of semiconductor laser - Google Patents

Manufacture of semiconductor laser

Info

Publication number
JPS56169385A
JPS56169385A JP7234480A JP7234480A JPS56169385A JP S56169385 A JPS56169385 A JP S56169385A JP 7234480 A JP7234480 A JP 7234480A JP 7234480 A JP7234480 A JP 7234480A JP S56169385 A JPS56169385 A JP S56169385A
Authority
JP
Japan
Prior art keywords
layer
type
semiconductor laser
grown
active
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7234480A
Other languages
Japanese (ja)
Other versions
JPS6241437B2 (en
Inventor
Isamu Sakuma
Hideo Kawano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP7234480A priority Critical patent/JPS56169385A/en
Publication of JPS56169385A publication Critical patent/JPS56169385A/en
Publication of JPS6241437B2 publication Critical patent/JPS6241437B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching

Landscapes

  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To obtain a semiconductor laser having extremely high reproducibility and uniformity by removing only both sides of an active layer in groove shape by etching, forming a grown layer on the surface of the etched layer and completing the burying of the side surface of the active unit. CONSTITUTION:An N type InP layer 10 of clad layer, an In0.77Ga0.23As0.51P0.49 layer 11 of active layer and a P type In layer 12 of the second clad layer are epitaxially grown in the first liquid phase growth on an N type InP semiconductor substrate 9. Then, an SiO2 18 is formed only on the stripe region on the upper surface side of the layer 12, and the layer 12 of the side is removed. The remaining layer 12 and the layer 11 are again etched, a groove 13 reaching the layer 10 is formed, and the surface of the layer 10 at only this part is exposed. Then, a photoresist film is removed, the liquid phase epitaxial growth of the second stage is performed, and N type InP layer 14 is grown. Further, a P type electrode 16 is formed via an SiO2 film 15, and N type electrode 17 is formed on the back surface of the substrate 9, and a buried type semiconductor laser can be obtained.
JP7234480A 1980-05-30 1980-05-30 Manufacture of semiconductor laser Granted JPS56169385A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7234480A JPS56169385A (en) 1980-05-30 1980-05-30 Manufacture of semiconductor laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7234480A JPS56169385A (en) 1980-05-30 1980-05-30 Manufacture of semiconductor laser

Publications (2)

Publication Number Publication Date
JPS56169385A true JPS56169385A (en) 1981-12-26
JPS6241437B2 JPS6241437B2 (en) 1987-09-02

Family

ID=13486585

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7234480A Granted JPS56169385A (en) 1980-05-30 1980-05-30 Manufacture of semiconductor laser

Country Status (1)

Country Link
JP (1) JPS56169385A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100729117B1 (en) 2006-08-28 2007-06-14 동부일렉트로닉스 주식회사 Metal wire formation method of DLP element

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100729117B1 (en) 2006-08-28 2007-06-14 동부일렉트로닉스 주식회사 Metal wire formation method of DLP element

Also Published As

Publication number Publication date
JPS6241437B2 (en) 1987-09-02

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