[go: up one dir, main page]

JPS6422089A - Optically bistable semiconductor laser and its manufacture - Google Patents

Optically bistable semiconductor laser and its manufacture

Info

Publication number
JPS6422089A
JPS6422089A JP17958887A JP17958887A JPS6422089A JP S6422089 A JPS6422089 A JP S6422089A JP 17958887 A JP17958887 A JP 17958887A JP 17958887 A JP17958887 A JP 17958887A JP S6422089 A JPS6422089 A JP S6422089A
Authority
JP
Japan
Prior art keywords
layer
inp
mask
isolation trench
sio2 film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP17958887A
Other languages
Japanese (ja)
Other versions
JPH0824210B2 (en
Inventor
Masaaki Kuno
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP17958887A priority Critical patent/JPH0824210B2/en
Publication of JPS6422089A publication Critical patent/JPS6422089A/en
Publication of JPH0824210B2 publication Critical patent/JPH0824210B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F3/00—Optical logic elements; Optical bistable devices
    • G02F3/02—Optical bistable devices
    • G02F3/026—Optical bistable devices based on laser effects

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To increase isolation resistance, and enable the decrease of an oscillation threshold value, by making a structure wherein an isolation trench is formed in an active layer to a depth reaching at least an upper clad layer, and a semi-insulative semiconductor layer is buried in the isolation trench. CONSTITUTION:By liquid growth method, a double hetero junction structure is formed on an N-InP substrate 1. A stripe-type SiO2 film mask 31 is formed. By applying this to a protective film, etching is performed up to an N-InP clad layer 2, and a stripe-type laser layer 6 containing an active layer 3 is formed. An iron-doped SI-InP layer 11 is grown and buried until the surface becomes flat. Then the SiO2 film mask 31 is eliminated, and a new SiO2 film mask 32 is formed in the perpendicular direction. By applying this to a protective mask, etching performed up to a P-InP clad layer 4, and a stripe-type isolation trench 13 is formed. The SiO2 film mask 32 is left as it is. By applying this to a mask, an ion-doped SI-InP layer 21 is grown and buried in the isolation trench 13 part by vapor growth method, until the surface becomes flat.
JP17958887A 1987-07-17 1987-07-17 Optical bistable semiconductor laser and manufacturing method thereof Expired - Fee Related JPH0824210B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17958887A JPH0824210B2 (en) 1987-07-17 1987-07-17 Optical bistable semiconductor laser and manufacturing method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17958887A JPH0824210B2 (en) 1987-07-17 1987-07-17 Optical bistable semiconductor laser and manufacturing method thereof

Publications (2)

Publication Number Publication Date
JPS6422089A true JPS6422089A (en) 1989-01-25
JPH0824210B2 JPH0824210B2 (en) 1996-03-06

Family

ID=16068355

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17958887A Expired - Fee Related JPH0824210B2 (en) 1987-07-17 1987-07-17 Optical bistable semiconductor laser and manufacturing method thereof

Country Status (1)

Country Link
JP (1) JPH0824210B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03286586A (en) * 1990-04-03 1991-12-17 Nec Corp Integration type light modulator and manufacture thereof
CN111504523A (en) * 2020-04-15 2020-08-07 深圳第三代半导体研究院 Self-luminous type calendaring electric device and preparation method thereof

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03286586A (en) * 1990-04-03 1991-12-17 Nec Corp Integration type light modulator and manufacture thereof
CN111504523A (en) * 2020-04-15 2020-08-07 深圳第三代半导体研究院 Self-luminous type calendaring electric device and preparation method thereof

Also Published As

Publication number Publication date
JPH0824210B2 (en) 1996-03-06

Similar Documents

Publication Publication Date Title
JPS63500279A (en) Method of manufacturing semiconductor structures
JPS5710285A (en) Semiconductor laser
JPS5496386A (en) Manufacture of buried optical semiconductor device
JPS5743487A (en) Semiconductor laser
JPS6422089A (en) Optically bistable semiconductor laser and its manufacture
GB2221093A (en) A semiconductor laser device and production method thereof
JPS57152180A (en) Manufacture of semiconductor laser device
JPS57183091A (en) Manufacture of optical integrated circuit
JPS5743428A (en) Mesa etching method
JPS5736882A (en) Stripe type double hetero junction laser element
JPS5728390A (en) Semiconductor laser
JPS5666084A (en) Semiconductor light-emitting element
JPS57167693A (en) Manufacture of optical semiconductor element
JPS56142691A (en) Semiconductor light emitting device
JPS5662386A (en) Manufacture of semiconductor device
JPS6482684A (en) Manufacture of semiconductor laser
JPS5748286A (en) Manufacture of buried hetero structured semiconductor laser
JPS57157590A (en) Manufacture of semiconductor laser device
JPS56169384A (en) Manufacture of semiconductor laser
JPS6430287A (en) Semiconductor laser device and manufacture thereof
JPS54115087A (en) Double hetero junction laser of stripe type
JPS5712587A (en) Hetero-structure semiconductor laser
JPS5769793A (en) Semiconductor laser device
JPS6459981A (en) Manufacture of semiconductor laser
JPS54157093A (en) Production method of semiconductor laser element

Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees