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JPS5743487A - Semiconductor laser - Google Patents

Semiconductor laser

Info

Publication number
JPS5743487A
JPS5743487A JP11863480A JP11863480A JPS5743487A JP S5743487 A JPS5743487 A JP S5743487A JP 11863480 A JP11863480 A JP 11863480A JP 11863480 A JP11863480 A JP 11863480A JP S5743487 A JPS5743487 A JP S5743487A
Authority
JP
Japan
Prior art keywords
layer
type
layers
striped
clad layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11863480A
Other languages
Japanese (ja)
Inventor
Junji Hayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP11863480A priority Critical patent/JPS5743487A/en
Publication of JPS5743487A publication Critical patent/JPS5743487A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode

Landscapes

  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To improve the operating characteristics of a laser by filling a clad layer between an active layer and a guide layer, thereby forming a striped guide layer with good reproducibility and confining the carrier preferably. CONSTITUTION:An n type clad layer 12, an n type active layer 13, a p type active layer 13, a p type clad layer 14, a p type guide layer 15 and a p type clad layer 16 are continuously grown by a liquid epitaxial growth method sequentially on an n type semiconductor substrate 11. At this time the layers 12, 14 have smaller refractive indexes than the layer 15 and larger forbidden band width than that. An SiO2 film is adhered in the striped shaped of 4-6mum in width by a CVD method on the layer 16, and the layers 16, 15 are etched and removed except the striped part. An n type InP layer 17 is so epitaxially grown as to surround the layers 15, 16 thus retained, electrodes 18, 19 are formed, and a reflecting surface is then formed by cleavage.
JP11863480A 1980-08-28 1980-08-28 Semiconductor laser Pending JPS5743487A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11863480A JPS5743487A (en) 1980-08-28 1980-08-28 Semiconductor laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11863480A JPS5743487A (en) 1980-08-28 1980-08-28 Semiconductor laser

Publications (1)

Publication Number Publication Date
JPS5743487A true JPS5743487A (en) 1982-03-11

Family

ID=14741379

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11863480A Pending JPS5743487A (en) 1980-08-28 1980-08-28 Semiconductor laser

Country Status (1)

Country Link
JP (1) JPS5743487A (en)

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6064488A (en) * 1983-09-19 1985-04-13 Rohm Co Ltd Semiconductor laser and manufacture thereof
JPS6064491A (en) * 1983-09-19 1985-04-13 Rohm Co Ltd Semiconductor laser and manufacture thereof
JPS6064490A (en) * 1983-09-19 1985-04-13 Rohm Co Ltd Semiconductor laser and manufacture thereof
JPS6064492A (en) * 1983-09-19 1985-04-13 Rohm Co Ltd Semiconductor laser and manufacture thereof
JPS6174382A (en) * 1984-09-20 1986-04-16 Matsushita Electric Ind Co Ltd Semiconductor laser device and manufacture thereof
JPS61285781A (en) * 1985-06-12 1986-12-16 Sanyo Electric Co Ltd Semiconductor laser
JPS62147792A (en) * 1985-12-23 1987-07-01 Hitachi Ltd Manufacture of semiconductor laser
JPS6317586A (en) * 1986-07-10 1988-01-25 Nec Corp Semiconductor laser
JPS6360404A (en) * 1986-03-28 1988-03-16 トムソン‐セーエスエフ Solid-state optical guide, laser applying said optical guide and manufacture of said optical guide and laser
JPS63164290A (en) * 1986-12-25 1988-07-07 Mitsubishi Electric Corp Semiconductor laser device
JP2001057461A (en) * 1999-06-10 2001-02-27 Nichia Chem Ind Ltd Nitride semiconductor laser element
JP2003086899A (en) * 2001-09-12 2003-03-20 Furukawa Electric Co Ltd:The Semiconductor laser element and its manufacturing method

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6064488A (en) * 1983-09-19 1985-04-13 Rohm Co Ltd Semiconductor laser and manufacture thereof
JPS6064491A (en) * 1983-09-19 1985-04-13 Rohm Co Ltd Semiconductor laser and manufacture thereof
JPS6064490A (en) * 1983-09-19 1985-04-13 Rohm Co Ltd Semiconductor laser and manufacture thereof
JPS6064492A (en) * 1983-09-19 1985-04-13 Rohm Co Ltd Semiconductor laser and manufacture thereof
JPS6174382A (en) * 1984-09-20 1986-04-16 Matsushita Electric Ind Co Ltd Semiconductor laser device and manufacture thereof
JPS61285781A (en) * 1985-06-12 1986-12-16 Sanyo Electric Co Ltd Semiconductor laser
JPS62147792A (en) * 1985-12-23 1987-07-01 Hitachi Ltd Manufacture of semiconductor laser
JPS6360404A (en) * 1986-03-28 1988-03-16 トムソン‐セーエスエフ Solid-state optical guide, laser applying said optical guide and manufacture of said optical guide and laser
JPS6317586A (en) * 1986-07-10 1988-01-25 Nec Corp Semiconductor laser
JPS63164290A (en) * 1986-12-25 1988-07-07 Mitsubishi Electric Corp Semiconductor laser device
JP2001057461A (en) * 1999-06-10 2001-02-27 Nichia Chem Ind Ltd Nitride semiconductor laser element
JP2003086899A (en) * 2001-09-12 2003-03-20 Furukawa Electric Co Ltd:The Semiconductor laser element and its manufacturing method

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