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JPS5734370A - Manufacture of junction type field-effect transistor - Google Patents

Manufacture of junction type field-effect transistor

Info

Publication number
JPS5734370A
JPS5734370A JP10952080A JP10952080A JPS5734370A JP S5734370 A JPS5734370 A JP S5734370A JP 10952080 A JP10952080 A JP 10952080A JP 10952080 A JP10952080 A JP 10952080A JP S5734370 A JPS5734370 A JP S5734370A
Authority
JP
Japan
Prior art keywords
region
source
gate
drain region
manufacture
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10952080A
Other languages
Japanese (ja)
Inventor
Hiroshi Misawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kokusai Denki Electric Inc
Original Assignee
Hitachi Denshi KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Denshi KK filed Critical Hitachi Denshi KK
Priority to JP10952080A priority Critical patent/JPS5734370A/en
Publication of JPS5734370A publication Critical patent/JPS5734370A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes

Landscapes

  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE:To obtain the element having a small gate capacitance and a high mutual- conductance for the subject transistor by a method wherein a reverse conductive gate region is shallowly formed after a source and drain region has been formed, and the source and drain region contacting the gate side is removed. CONSTITUTION:For example, an N epitaxial layer 2 is grown on a P substrate 1 and after a P region 4 has been formed, apertures 7a and 7b are provided on an oxide film 3, and N type impurities are induced in the source region 8a and the drain region 8b. Then, the oxide film 3 on the surface is removed, P type impurities are induced and a P type layer 10 is formed shallower than the regions 8a and 8b. Subsequently, the regions 8a and 8b on the side section of the P region 10 are removed by etching and after a gate region 11 has been protrusively formed aparting from the source and drain region, and the surface layer is turned to an N channel JFET by performing oxidation. Through these procedures, gate capacity can be reduced and the element having high transconductance can be formed.
JP10952080A 1980-08-09 1980-08-09 Manufacture of junction type field-effect transistor Pending JPS5734370A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10952080A JPS5734370A (en) 1980-08-09 1980-08-09 Manufacture of junction type field-effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10952080A JPS5734370A (en) 1980-08-09 1980-08-09 Manufacture of junction type field-effect transistor

Publications (1)

Publication Number Publication Date
JPS5734370A true JPS5734370A (en) 1982-02-24

Family

ID=14512335

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10952080A Pending JPS5734370A (en) 1980-08-09 1980-08-09 Manufacture of junction type field-effect transistor

Country Status (1)

Country Link
JP (1) JPS5734370A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5988946A (en) * 1982-08-12 1984-05-23 イ−・アイ・デユポン・デ・ニモアス・アンド・カンパニ− Oriented fabric-like furniture support substance
JPS62156314A (en) * 1985-12-25 1987-07-11 Kanebo Ltd Polycapramide-polyurethane elastomer conjugated filament and its production
JPS63175118A (en) * 1987-01-13 1988-07-19 Kanebo Ltd Yarn material for stocking
US5164262A (en) * 1988-06-30 1992-11-17 Toray Industries, Inc. Polyurethane polyamide self-crimping conjugate fiber

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5988946A (en) * 1982-08-12 1984-05-23 イ−・アイ・デユポン・デ・ニモアス・アンド・カンパニ− Oriented fabric-like furniture support substance
JPS62156314A (en) * 1985-12-25 1987-07-11 Kanebo Ltd Polycapramide-polyurethane elastomer conjugated filament and its production
JPS63175118A (en) * 1987-01-13 1988-07-19 Kanebo Ltd Yarn material for stocking
JPH0260765B2 (en) * 1987-01-13 1990-12-18 Kanebo Ltd
US5164262A (en) * 1988-06-30 1992-11-17 Toray Industries, Inc. Polyurethane polyamide self-crimping conjugate fiber

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