JPS57208156A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS57208156A JPS57208156A JP9303681A JP9303681A JPS57208156A JP S57208156 A JPS57208156 A JP S57208156A JP 9303681 A JP9303681 A JP 9303681A JP 9303681 A JP9303681 A JP 9303681A JP S57208156 A JPS57208156 A JP S57208156A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- polycrystalline silicon
- selectively
- film
- mask
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 239000004065 semiconductor Substances 0.000 title abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 4
- 230000003078 antioxidant effect Effects 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract 2
- 229910052682 stishovite Inorganic materials 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 229910052905 tridymite Inorganic materials 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 230000007547 defect Effects 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 abstract 1
- 230000003647 oxidation Effects 0.000 abstract 1
- 238000007254 oxidation reaction Methods 0.000 abstract 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 239000012808 vapor phase Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
- H01L21/76213—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO introducing electrical inactive or active impurities in the local oxidation region, e.g. to alter LOCOS oxide growth characteristics or for additional isolation purpose
- H01L21/76216—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO introducing electrical inactive or active impurities in the local oxidation region, e.g. to alter LOCOS oxide growth characteristics or for additional isolation purpose introducing electrical active impurities in the local oxidation region for the sole purpose of creating channel stoppers
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Weting (AREA)
- Local Oxidation Of Silicon (AREA)
- Element Separation (AREA)
Abstract
PURPOSE:To prevent the production of a defect due to the thermal influence at the time of selective oxidation by forming a material layer to be oxidized on a semiconductor substrate, selectively forming an antioxidative mask on the layer to selectively oxidize the layer and removing the mask and the remaining layer. CONSTITUTION:A P type single crystal silicon substrate 1 is thermally oxidized to grow a thermally oxidized film 2 on the main surface, a polycrystalline silicon is then grown in vapor phase, and a phosphorus-doped polycrystalline silicon layer 3 is accumulated. Then, a nitrided silicon pattern 4 is selectively formed as an antioxidative mask, a polycrystalline silicon layer 3 is selectively oxidized, thereby forming a thermally oxidized film 6. After the pattern 4 is then removed, the remaining polycrystalline silicon layer 3' is removed. Subsequently, the projections of plasma CVD SiO2 7 is formed covering the whole surface, and the SiO2 7 and the film 6 are substantially etched and removed. Then, an n-channel MOSIC is formed with the film 6 as an element isolating region.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9303681A JPS57208156A (en) | 1981-06-18 | 1981-06-18 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9303681A JPS57208156A (en) | 1981-06-18 | 1981-06-18 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS57208156A true JPS57208156A (en) | 1982-12-21 |
Family
ID=14071262
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9303681A Pending JPS57208156A (en) | 1981-06-18 | 1981-06-18 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57208156A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61263265A (en) * | 1985-05-17 | 1986-11-21 | Matsushita Electronics Corp | Manufacture of semiconductor device |
| US5338750A (en) * | 1992-11-27 | 1994-08-16 | Industrial Technology Research Institute | Fabrication method to produce pit-free polysilicon buffer local oxidation isolation |
-
1981
- 1981-06-18 JP JP9303681A patent/JPS57208156A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61263265A (en) * | 1985-05-17 | 1986-11-21 | Matsushita Electronics Corp | Manufacture of semiconductor device |
| US5338750A (en) * | 1992-11-27 | 1994-08-16 | Industrial Technology Research Institute | Fabrication method to produce pit-free polysilicon buffer local oxidation isolation |
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