JPS5687342A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS5687342A JPS5687342A JP16349079A JP16349079A JPS5687342A JP S5687342 A JPS5687342 A JP S5687342A JP 16349079 A JP16349079 A JP 16349079A JP 16349079 A JP16349079 A JP 16349079A JP S5687342 A JPS5687342 A JP S5687342A
- Authority
- JP
- Japan
- Prior art keywords
- silicide
- injected
- wafer
- oxidized
- oxidation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- 150000002500 ions Chemical class 0.000 abstract 3
- 230000003647 oxidation Effects 0.000 abstract 3
- 238000007254 oxidation reaction Methods 0.000 abstract 3
- 229910021332 silicide Inorganic materials 0.000 abstract 3
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 abstract 3
- 229910052681 coesite Inorganic materials 0.000 abstract 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract 2
- 229910052682 stishovite Inorganic materials 0.000 abstract 2
- 229910052905 tridymite Inorganic materials 0.000 abstract 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 abstract 1
- YXTPWUNVHCYOSP-UHFFFAOYSA-N bis($l^{2}-silanylidene)molybdenum Chemical compound [Si]=[Mo]=[Si] YXTPWUNVHCYOSP-UHFFFAOYSA-N 0.000 abstract 1
- 230000008021 deposition Effects 0.000 abstract 1
- 229910052751 metal Inorganic materials 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 229910052750 molybdenum Inorganic materials 0.000 abstract 1
- 239000011733 molybdenum Substances 0.000 abstract 1
- 229910021344 molybdenum silicide Inorganic materials 0.000 abstract 1
- 238000000059 patterning Methods 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
PURPOSE:To prevent metal from being deposited by silicide oxidation by a method wherein silicon is ion-injected into the silicide before the oxidation. CONSTITUTION:An Si wafer on the surface is oxidized to form SiO2 by 500Angstrom . The molybdenum silicide is attached on the SiO2 by 4000Angstrom spattering and at this stage, an Si<+> is ion-injected at 35keV in a half region of the wafer over the area of 1X10<17>/ cm<2>. After then, the wafer is applied a patterning with a mask and oxidized at 1,000 deg.C from 30min in dry O2, and then, the heat-oxidized film is removed. Thus, the region where the Si ions are injected has little molybdenum left therein due to deposition and has been put in a state that patterns are cut to the satisfaction. Simultaneously, the roughness on the surface and end face of the silicide due to the oxidation process can be prevented.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16349079A JPS5687342A (en) | 1979-12-18 | 1979-12-18 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16349079A JPS5687342A (en) | 1979-12-18 | 1979-12-18 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5687342A true JPS5687342A (en) | 1981-07-15 |
Family
ID=15774847
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16349079A Pending JPS5687342A (en) | 1979-12-18 | 1979-12-18 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5687342A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59129471A (en) * | 1983-01-14 | 1984-07-25 | Toshiba Corp | Semiconductor device and manufacture thereof |
| US5541131A (en) * | 1991-02-01 | 1996-07-30 | Taiwan Semiconductor Manufacturing Co. | Peeling free metal silicide films using ion implantation |
-
1979
- 1979-12-18 JP JP16349079A patent/JPS5687342A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59129471A (en) * | 1983-01-14 | 1984-07-25 | Toshiba Corp | Semiconductor device and manufacture thereof |
| US5541131A (en) * | 1991-02-01 | 1996-07-30 | Taiwan Semiconductor Manufacturing Co. | Peeling free metal silicide films using ion implantation |
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