JPS5314555A - Depositing method of impurity to silicon wafersa - Google Patents
Depositing method of impurity to silicon wafersaInfo
- Publication number
- JPS5314555A JPS5314555A JP8816376A JP8816376A JPS5314555A JP S5314555 A JPS5314555 A JP S5314555A JP 8816376 A JP8816376 A JP 8816376A JP 8816376 A JP8816376 A JP 8816376A JP S5314555 A JPS5314555 A JP S5314555A
- Authority
- JP
- Japan
- Prior art keywords
- wafersa
- impurity
- silicon
- depositing method
- depositing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000151 deposition Methods 0.000 title abstract 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title 1
- 239000012535 impurity Substances 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 229910052710 silicon Inorganic materials 0.000 title 1
- 239000010703 silicon Substances 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 230000008021 deposition Effects 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
PURPOSE: To form a deposition layer having a highly accurately controlled concentration while preventing roughing of Si wafer surface by depositing B on the Si wafer after depositing a thin SiO2 film.
COPYRIGHT: (C)1978,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8816376A JPS5314555A (en) | 1976-07-26 | 1976-07-26 | Depositing method of impurity to silicon wafersa |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8816376A JPS5314555A (en) | 1976-07-26 | 1976-07-26 | Depositing method of impurity to silicon wafersa |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5314555A true JPS5314555A (en) | 1978-02-09 |
Family
ID=13935248
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8816376A Pending JPS5314555A (en) | 1976-07-26 | 1976-07-26 | Depositing method of impurity to silicon wafersa |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5314555A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57501983A (en) * | 1980-12-15 | 1982-11-04 | ||
| JPS5965100A (en) * | 1982-09-03 | 1984-04-13 | ジ−・デイ・サ−ル・アンド・コンパニ− | Novel aminosteroid |
-
1976
- 1976-07-26 JP JP8816376A patent/JPS5314555A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57501983A (en) * | 1980-12-15 | 1982-11-04 | ||
| JPS5965100A (en) * | 1982-09-03 | 1984-04-13 | ジ−・デイ・サ−ル・アンド・コンパニ− | Novel aminosteroid |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS5351970A (en) | Manufacture for semiconductor substrate | |
| JPS53135263A (en) | Production of semiconductor device | |
| JPS5314555A (en) | Depositing method of impurity to silicon wafersa | |
| JPS5247673A (en) | Process for production of silicon crystal film | |
| JPS5331964A (en) | Production of semiconductor substrates | |
| JPS53108389A (en) | Manufacture for semiconductor device | |
| JPS53104162A (en) | Forming method for epitaxial layer on semiconductor wafer | |
| JPS5336182A (en) | Thin semiconductor single crystal film forming insulation substrate | |
| JPS543470A (en) | Etching method | |
| JPS52130575A (en) | Semiconductor device and its preparation | |
| JPS5353263A (en) | Manufacture of semiconductor element | |
| JPS5348667A (en) | Evaluation method of silicon single crystal wafer | |
| JPS5283164A (en) | Production of thin film semiconductor substrate | |
| JPS5366163A (en) | Selective growth method of semiconductor buried layer | |
| JPS57113251A (en) | Manufacture of semiconductor device | |
| JPS5231665A (en) | Growing method of semiconductor crystal | |
| JPS5377185A (en) | Electrode formation method of semiconductor device | |
| JPS5244165A (en) | Process for production of semiconductor device | |
| JPS5396673A (en) | Gas plasma etching method for sio2 film | |
| JPS53142870A (en) | Manufacture for semiconductor device | |
| JPS5223265A (en) | Method of processing semiconductor materials | |
| JPS52146565A (en) | Production of semiconductor device | |
| JPS5243369A (en) | Flat etching method for silicon | |
| JPS5375771A (en) | Manufacture for semiconductor device | |
| JPS5259589A (en) | Production of semiconductor device |