[go: up one dir, main page]

JPS57201016A - Cleaning method for semiconductor manufacturing apparatus - Google Patents

Cleaning method for semiconductor manufacturing apparatus

Info

Publication number
JPS57201016A
JPS57201016A JP56085644A JP8564481A JPS57201016A JP S57201016 A JPS57201016 A JP S57201016A JP 56085644 A JP56085644 A JP 56085644A JP 8564481 A JP8564481 A JP 8564481A JP S57201016 A JPS57201016 A JP S57201016A
Authority
JP
Japan
Prior art keywords
gas
furnace
plasma
electrodes
manufacturing apparatus
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56085644A
Other languages
Japanese (ja)
Inventor
Kenji Anzai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Priority to JP56085644A priority Critical patent/JPS57201016A/en
Publication of JPS57201016A publication Critical patent/JPS57201016A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
    • H10P14/24—
    • H10P14/3411—

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE:To sublime and remove a solid accumulated material by generating a plasma in a furnace. CONSTITUTION:Remaining gas in a reaction furnace 1 is exhausted by a vacuum pump 14, cleaning gas 11 is led from a gas flow inlet tube 5 into the furnace 1 to maintain vacuum state. Then, high frequency electric field is applied to the electrodes 12, 13 to generate a plasma between the electrodes 12 and 13, thereby simultaneously subliming and removing the solid accumulated material remaining in the furnace and tube system. In case that the accumulated material is silicon or silicon compound, Freon gas (CF4) is used as a cleaning gas, and when the material is organic material, oxygen gas (O2) is used as the cleaning gas.
JP56085644A 1981-06-05 1981-06-05 Cleaning method for semiconductor manufacturing apparatus Pending JPS57201016A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56085644A JPS57201016A (en) 1981-06-05 1981-06-05 Cleaning method for semiconductor manufacturing apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56085644A JPS57201016A (en) 1981-06-05 1981-06-05 Cleaning method for semiconductor manufacturing apparatus

Publications (1)

Publication Number Publication Date
JPS57201016A true JPS57201016A (en) 1982-12-09

Family

ID=13864524

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56085644A Pending JPS57201016A (en) 1981-06-05 1981-06-05 Cleaning method for semiconductor manufacturing apparatus

Country Status (1)

Country Link
JP (1) JPS57201016A (en)

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6061722U (en) * 1983-09-30 1985-04-30 株式会社島津製作所 Film forming equipment
JPS61250185A (en) * 1985-04-25 1986-11-07 Anelva Corp Cleaning method for vacuum treatment device
JPH053162A (en) * 1991-10-22 1993-01-08 Nec Corp Vapor epitaxial growth device
US5356478A (en) * 1992-06-22 1994-10-18 Lam Research Corporation Plasma cleaning method for removing residues in a plasma treatment chamber
US5647953A (en) * 1995-12-22 1997-07-15 Lam Research Corporation Plasma cleaning method for removing residues in a plasma process chamber
US6071573A (en) * 1997-12-30 2000-06-06 Lam Research Corporation Process for precoating plasma CVD reactors
US6174499B1 (en) 1996-03-18 2001-01-16 Nec Corporation Method and apparatus for treatment of freon gas
US6350697B1 (en) 1999-12-22 2002-02-26 Lam Research Corporation Method of cleaning and conditioning plasma reaction chamber
KR100320788B1 (en) * 1995-10-15 2002-06-22 순페이 야마자끼 Laser irradiation method and semiconductor device manufacturing method
US6626185B2 (en) 1996-06-28 2003-09-30 Lam Research Corporation Method of depositing a silicon containing layer on a semiconductor substrate
US6770214B2 (en) 2001-03-30 2004-08-03 Lam Research Corporation Method of reducing aluminum fluoride deposits in plasma etch reactor
CN108728901A (en) * 2018-06-15 2018-11-02 常州亿晶光电科技有限公司 A kind of maintenance method of diffusion furnace tube

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6061722U (en) * 1983-09-30 1985-04-30 株式会社島津製作所 Film forming equipment
JPS61250185A (en) * 1985-04-25 1986-11-07 Anelva Corp Cleaning method for vacuum treatment device
JPH053162A (en) * 1991-10-22 1993-01-08 Nec Corp Vapor epitaxial growth device
US5356478A (en) * 1992-06-22 1994-10-18 Lam Research Corporation Plasma cleaning method for removing residues in a plasma treatment chamber
KR100320788B1 (en) * 1995-10-15 2002-06-22 순페이 야마자끼 Laser irradiation method and semiconductor device manufacturing method
US5647953A (en) * 1995-12-22 1997-07-15 Lam Research Corporation Plasma cleaning method for removing residues in a plasma process chamber
US6174499B1 (en) 1996-03-18 2001-01-16 Nec Corporation Method and apparatus for treatment of freon gas
US6626185B2 (en) 1996-06-28 2003-09-30 Lam Research Corporation Method of depositing a silicon containing layer on a semiconductor substrate
US6071573A (en) * 1997-12-30 2000-06-06 Lam Research Corporation Process for precoating plasma CVD reactors
US6350697B1 (en) 1999-12-22 2002-02-26 Lam Research Corporation Method of cleaning and conditioning plasma reaction chamber
US6770214B2 (en) 2001-03-30 2004-08-03 Lam Research Corporation Method of reducing aluminum fluoride deposits in plasma etch reactor
CN108728901A (en) * 2018-06-15 2018-11-02 常州亿晶光电科技有限公司 A kind of maintenance method of diffusion furnace tube

Similar Documents

Publication Publication Date Title
JPS56158873A (en) Dry etching method
JPS57201016A (en) Cleaning method for semiconductor manufacturing apparatus
EP0938134A3 (en) Plasma processing method
ATE224584T1 (en) METHOD AND DEVICE FOR CLEANING A PLASMA REACTOR
ATE210742T1 (en) CLEANING METHOD AND APPARATUS FOR VACUUM TUBE IN A CVD SYSTEM
DE60142685D1 (en) METHOD FOR POLETING POLYSILICIDE WITH IMPROVED HOMOGENEITY AND A REDUCED ARABIC RATEVARIATION
JPS5684476A (en) Etching method of gas plasma
RU2001112760A (en) The method of cleaning material (options) and a device for its implementation
JPS5713743A (en) Plasma etching apparatus and etching method
EP0385709A3 (en) Fluid flow control method and apparatus for minimizing particle contamination
EP1237177A3 (en) Apparatus and method for etching semiconductor wafers
TW375765B (en) Method for reducing particles deposited onto a semiconductor wafer during plasma processing
EP0431190A4 (en) Fluid treater and method of stopping the same
CN1127425A (en) Method for cleaning vacuum processing chamber which process by bromide gas
JPS54124683A (en) Processing method of silicon wafer
JPS55138237A (en) Manufacture of semiconductor device
JPS5298475A (en) Plasma treating apparatus
JPS5524941A (en) Dry etching apparatus
JPS5477573A (en) Operating method of plasma treating apparatus
JPS5486968A (en) Washing
JPS5669382A (en) Surface treatment by plasma
JPS60234324A (en) Dry etching apparatus
JPS54101273A (en) Manufacture for semiconductor device
JPS5547381A (en) Plasma etching method
JPS54125976A (en) Ion etching method