JPS54125976A - Ion etching method - Google Patents
Ion etching methodInfo
- Publication number
- JPS54125976A JPS54125976A JP3286778A JP3286778A JPS54125976A JP S54125976 A JPS54125976 A JP S54125976A JP 3286778 A JP3286778 A JP 3286778A JP 3286778 A JP3286778 A JP 3286778A JP S54125976 A JPS54125976 A JP S54125976A
- Authority
- JP
- Japan
- Prior art keywords
- room
- etching
- discharge
- electrode
- gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000992 sputter etching Methods 0.000 title abstract 2
- 238000000034 method Methods 0.000 title 1
- 238000005530 etching Methods 0.000 abstract 5
- 239000007789 gas Substances 0.000 abstract 3
- 238000010494 dissociation reaction Methods 0.000 abstract 2
- 230000005593 dissociations Effects 0.000 abstract 2
- 229910052799 carbon Inorganic materials 0.000 abstract 1
- 125000004432 carbon atom Chemical group C* 0.000 abstract 1
- 239000000356 contaminant Substances 0.000 abstract 1
- 125000005843 halogen group Chemical group 0.000 abstract 1
- 125000004430 oxygen atom Chemical group O* 0.000 abstract 1
- 239000012495 reaction gas Substances 0.000 abstract 1
Landscapes
- Drying Of Semiconductors (AREA)
Abstract
PURPOSE: To ensure an complete removal of the sticked piled stones when giving etching to the object to be etched via the discharge dissociation ion of the reactive gas containing the halogen atom and the carbon atom, by cleansing the inside of the discharge room with the discharge dissociation ion containing the oxygen atom after etching.
CONSTITUTION: Container 1 of the ion etching device is formed with discharge room 2 containing reaction gas introduction mount 4 and etching room 3 possessing vacuum exhanust port 5. At the same time, filament electrode 6 is provided to room 2, and the voltage is applied from AC power source 7 between electrode 6 and the wall of room 2 which functions as the anode in order to produce the discharge. In addition, electrodes 10W12 are provided to opening 8 and 9 between room 2 and 3, and electrode 10 and 12 are used for the grids to hold the high and zero potentials with electrode 11 used as the electron suppressor which sends backward the electron delivered from room 2. In such consitution, etched object 16 is stored in room 3 by carry out etching via the CF4 gas. When the etching ends, the O2 gas is introduced and dissociated in order to remove the contaminants accumulated within the device.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3286778A JPS54125976A (en) | 1978-03-24 | 1978-03-24 | Ion etching method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3286778A JPS54125976A (en) | 1978-03-24 | 1978-03-24 | Ion etching method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS54125976A true JPS54125976A (en) | 1979-09-29 |
Family
ID=12370797
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3286778A Pending JPS54125976A (en) | 1978-03-24 | 1978-03-24 | Ion etching method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS54125976A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61247031A (en) * | 1985-04-24 | 1986-11-04 | Hitachi Ltd | How to clean plasma processing equipment |
| US4624214A (en) * | 1982-10-08 | 1986-11-25 | Hitachi, Ltd. | Dry-processing apparatus |
-
1978
- 1978-03-24 JP JP3286778A patent/JPS54125976A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4624214A (en) * | 1982-10-08 | 1986-11-25 | Hitachi, Ltd. | Dry-processing apparatus |
| JPS61247031A (en) * | 1985-04-24 | 1986-11-04 | Hitachi Ltd | How to clean plasma processing equipment |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS57131374A (en) | Plasma etching device | |
| JPS5713743A (en) | Plasma etching apparatus and etching method | |
| GB913956A (en) | Improvements in and relating to ion sources | |
| JPS57201016A (en) | Cleaning method for semiconductor manufacturing apparatus | |
| JPS54125976A (en) | Ion etching method | |
| JPS5650042A (en) | Ion pump for super high vacuum | |
| JPS56105480A (en) | Plasma etching method | |
| JPS5647572A (en) | Etching method of indium oxide film | |
| JPS54124683A (en) | Processing method of silicon wafer | |
| RU2199349C2 (en) | Method and device for carrying out dry sterilization of medical products | |
| JPS5760073A (en) | Plasma etching method | |
| JPS5615044A (en) | Plasma cleaning method | |
| JPS57131373A (en) | Plasma etching device | |
| JPS5689835A (en) | Vapor phase growth apparatus | |
| JPS5524941A (en) | Dry etching apparatus | |
| JPS5812339B2 (en) | Ion etching method | |
| JPS6486521A (en) | Dry etching | |
| JPS5651578A (en) | Plasma etching method | |
| JPS5799744A (en) | Apparatus and method of plasma etching | |
| JPS57196520A (en) | Rinsing method for epitaxial growing apparatus | |
| JPS54107176A (en) | Production of atomic spectrum generating lamp | |
| JPS5635775A (en) | Ion beam etching method | |
| JPS54107840A (en) | Ion etching method | |
| JPS6464328A (en) | Plasma cleaning method | |
| JPS56141157A (en) | X-ray generator |