JPS5524941A - Dry etching apparatus - Google Patents
Dry etching apparatusInfo
- Publication number
- JPS5524941A JPS5524941A JP9678678A JP9678678A JPS5524941A JP S5524941 A JPS5524941 A JP S5524941A JP 9678678 A JP9678678 A JP 9678678A JP 9678678 A JP9678678 A JP 9678678A JP S5524941 A JPS5524941 A JP S5524941A
- Authority
- JP
- Japan
- Prior art keywords
- etching
- chamber
- plasma
- etched
- generating chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000001312 dry etching Methods 0.000 title abstract 2
- 238000005530 etching Methods 0.000 abstract 8
- 238000004020 luminiscence type Methods 0.000 abstract 2
- 239000000126 substance Substances 0.000 abstract 2
- 230000001105 regulatory effect Effects 0.000 abstract 1
Landscapes
- ing And Chemical Polishing (AREA)
- Drying Of Semiconductors (AREA)
Abstract
PURPOSE: To control the completion of etching automatically and exactly by detecting a chemical luminescence generated from material being etched during etching operation in a dry etching apparatus separated into a plasma generating chamber and an etching chamber.
CONSTITUTION: The gas plasma-generating chamber 1 and the etching chamber 2, both being connected to each other with the orifice 3, are vacuumized, and CF4 and O2 are supplied to the plasma-generating chamber 1 and its vaccum degree is regulated to approx. 0.3 torr. A high frequency voltage is applied across the electrodes 5 and 6 to dissociate gas by discharge and the gas plasma 8 so generated is introduced into the etching chamber 2 where the material 9 to be etched is etched. A chemical luminescence generated upon the etching operation is detected by the photo-sensor 11 and then put in the comparator 13 through the amplifier 12. At the comparator 13, it is compared with a set value from setter 14 and the completion of etching is detected in the form of a compared value. Then, the relay 15 is operat ed to stop the application of voltage from the high frequency power source 7 and thereby to stop etching automatically and exactly.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9678678A JPS5524941A (en) | 1978-08-09 | 1978-08-09 | Dry etching apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9678678A JPS5524941A (en) | 1978-08-09 | 1978-08-09 | Dry etching apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5524941A true JPS5524941A (en) | 1980-02-22 |
| JPS5534229B2 JPS5534229B2 (en) | 1980-09-05 |
Family
ID=14174312
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9678678A Granted JPS5524941A (en) | 1978-08-09 | 1978-08-09 | Dry etching apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5524941A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56125841A (en) * | 1980-03-07 | 1981-10-02 | Fujitsu Ltd | Plasma-etching method |
| JPS56129325A (en) * | 1980-03-14 | 1981-10-09 | Fujitsu Ltd | Dry etching |
| JPS5759332A (en) * | 1980-09-27 | 1982-04-09 | Fujitsu Ltd | Method for detecting finishing time of dry etching reaction |
| JPS58215030A (en) * | 1982-06-08 | 1983-12-14 | Kokusai Electric Co Ltd | Detector for dry etching finishing time of semiconductor substrate |
| US4897171A (en) * | 1985-11-26 | 1990-01-30 | Tadahiro Ohmi | Wafer susceptor |
-
1978
- 1978-08-09 JP JP9678678A patent/JPS5524941A/en active Granted
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56125841A (en) * | 1980-03-07 | 1981-10-02 | Fujitsu Ltd | Plasma-etching method |
| JPS56129325A (en) * | 1980-03-14 | 1981-10-09 | Fujitsu Ltd | Dry etching |
| JPS5759332A (en) * | 1980-09-27 | 1982-04-09 | Fujitsu Ltd | Method for detecting finishing time of dry etching reaction |
| JPS58215030A (en) * | 1982-06-08 | 1983-12-14 | Kokusai Electric Co Ltd | Detector for dry etching finishing time of semiconductor substrate |
| US4897171A (en) * | 1985-11-26 | 1990-01-30 | Tadahiro Ohmi | Wafer susceptor |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5534229B2 (en) | 1980-09-05 |
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