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JPS57153428A - High-pressure vessel for manufacturing semiconductor and its use - Google Patents

High-pressure vessel for manufacturing semiconductor and its use

Info

Publication number
JPS57153428A
JPS57153428A JP3888081A JP3888081A JPS57153428A JP S57153428 A JPS57153428 A JP S57153428A JP 3888081 A JP3888081 A JP 3888081A JP 3888081 A JP3888081 A JP 3888081A JP S57153428 A JPS57153428 A JP S57153428A
Authority
JP
Japan
Prior art keywords
gas
bomb
silane
germane
diluted
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3888081A
Other languages
Japanese (ja)
Other versions
JPH0355976B2 (en
Inventor
Shunpei Yamazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP3888081A priority Critical patent/JPS57153428A/en
Publication of JPS57153428A publication Critical patent/JPS57153428A/en
Publication of JPH0355976B2 publication Critical patent/JPH0355976B2/ja
Priority to JP4164304A priority patent/JP2573125B2/en
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/08—Reaction chambers; Selection of materials therefor

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Led Devices (AREA)
  • Photovoltaic Devices (AREA)

Abstract

PURPOSE:To obtain a lumpy cluster laminate by filling a bomb, which is connected to a reactor for growing the semi-amorphous semiconductor having crystalline structure, with a gassy impurity acquired by adding a trivalent or pentavalent impurity gas to a silicide gas or a germanide gas diluted with H2 or He. CONSTITUTION:A quartz boat 14 to which a plurality of substrates 15 are erected is received in an activating chamber 27 in a reaction pipe 1 surrounded by a resistance heating oven 6 and electrodes 2, 3 connected to a high-frequency power supply 4. The bombs 7-9 are connected to the gas introducing port of the reaction pipe 1 through valves 19-21 and flowmeters 16-18, and a rotary pump 12 is connected to a discharge port through valves 10, 11. In this constitution, 0.1-20mol% silane or germane diluted with H2 or He gas is enclosed into the bomb 7 and 5-0.05mol% diborane in addition to said silane or germane into the bomb 8, and the bomb 9 is filled with 5-0.05mol% phosphine or arsine besides silane or germane diluted.
JP3888081A 1981-03-18 1981-03-18 High-pressure vessel for manufacturing semiconductor and its use Granted JPS57153428A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP3888081A JPS57153428A (en) 1981-03-18 1981-03-18 High-pressure vessel for manufacturing semiconductor and its use
JP4164304A JP2573125B2 (en) 1981-03-18 1992-05-29 Semiconductor manufacturing gas in a high-pressure vessel

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP3888081A JPS57153428A (en) 1981-03-18 1981-03-18 High-pressure vessel for manufacturing semiconductor and its use
JP4164304A JP2573125B2 (en) 1981-03-18 1992-05-29 Semiconductor manufacturing gas in a high-pressure vessel

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP4164304A Division JP2573125B2 (en) 1981-03-18 1992-05-29 Semiconductor manufacturing gas in a high-pressure vessel

Publications (2)

Publication Number Publication Date
JPS57153428A true JPS57153428A (en) 1982-09-22
JPH0355976B2 JPH0355976B2 (en) 1991-08-27

Family

ID=26378171

Family Applications (2)

Application Number Title Priority Date Filing Date
JP3888081A Granted JPS57153428A (en) 1981-03-18 1981-03-18 High-pressure vessel for manufacturing semiconductor and its use
JP4164304A Expired - Lifetime JP2573125B2 (en) 1981-03-18 1992-05-29 Semiconductor manufacturing gas in a high-pressure vessel

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP4164304A Expired - Lifetime JP2573125B2 (en) 1981-03-18 1992-05-29 Semiconductor manufacturing gas in a high-pressure vessel

Country Status (1)

Country Link
JP (2) JPS57153428A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5989409A (en) * 1982-11-15 1984-05-23 Semiconductor Energy Lab Co Ltd Reactive gas for vapor phase reaction
JPS5989410A (en) * 1982-11-15 1984-05-23 Semiconductor Energy Lab Co Ltd Vapor phase reaction method

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5442581A (en) * 1977-09-09 1979-04-04 Mitsubishi Electric Corp Control signal terating unit of electromagnetic contactor

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
APPL PHYS LETT *
PH1LOS MAG *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5989409A (en) * 1982-11-15 1984-05-23 Semiconductor Energy Lab Co Ltd Reactive gas for vapor phase reaction
JPS5989410A (en) * 1982-11-15 1984-05-23 Semiconductor Energy Lab Co Ltd Vapor phase reaction method

Also Published As

Publication number Publication date
JP2573125B2 (en) 1997-01-22
JPH0355976B2 (en) 1991-08-27
JPH0653138A (en) 1994-02-25

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