JPS5384458A - Vapor growth method - Google Patents
Vapor growth methodInfo
- Publication number
- JPS5384458A JPS5384458A JP15948076A JP15948076A JPS5384458A JP S5384458 A JPS5384458 A JP S5384458A JP 15948076 A JP15948076 A JP 15948076A JP 15948076 A JP15948076 A JP 15948076A JP S5384458 A JPS5384458 A JP S5384458A
- Authority
- JP
- Japan
- Prior art keywords
- growth method
- vapor growth
- spacer
- installation
- adjusting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45585—Compression of gas before it reaches the substrate
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
PURPOSE:To carry out a uniform vapor epitaxial growth by adjusting the flow velocity distribution of the reaction gas flow with installation of a spacer into the reaction tube.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15948076A JPS59967B2 (en) | 1976-12-29 | 1976-12-29 | Vapor phase growth method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15948076A JPS59967B2 (en) | 1976-12-29 | 1976-12-29 | Vapor phase growth method |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5384458A true JPS5384458A (en) | 1978-07-25 |
JPS59967B2 JPS59967B2 (en) | 1984-01-10 |
Family
ID=15694683
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15948076A Expired JPS59967B2 (en) | 1976-12-29 | 1976-12-29 | Vapor phase growth method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS59967B2 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110047973A (en) * | 2019-04-23 | 2019-07-23 | 北京蜃景光电科技有限公司 | A kind of photoelectric sensor and preparation method thereof based on Copper-cladding Aluminum Bar cadmium sulfide nano wires |
-
1976
- 1976-12-29 JP JP15948076A patent/JPS59967B2/en not_active Expired
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110047973A (en) * | 2019-04-23 | 2019-07-23 | 北京蜃景光电科技有限公司 | A kind of photoelectric sensor and preparation method thereof based on Copper-cladding Aluminum Bar cadmium sulfide nano wires |
CN110047973B (en) * | 2019-04-23 | 2020-05-01 | 范佳旭 | Photoelectric sensor based on copper-doped cadmium sulfide nanowire and preparation method thereof |
Also Published As
Publication number | Publication date |
---|---|
JPS59967B2 (en) | 1984-01-10 |
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