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JPS6477122A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS6477122A
JPS6477122A JP23233487A JP23233487A JPS6477122A JP S6477122 A JPS6477122 A JP S6477122A JP 23233487 A JP23233487 A JP 23233487A JP 23233487 A JP23233487 A JP 23233487A JP S6477122 A JPS6477122 A JP S6477122A
Authority
JP
Japan
Prior art keywords
film
grown
wafer
tin
manufacture
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP23233487A
Other languages
Japanese (ja)
Inventor
Minoru Inoue
Koji Hashizume
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP23233487A priority Critical patent/JPS6477122A/en
Publication of JPS6477122A publication Critical patent/JPS6477122A/en
Pending legal-status Critical Current

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  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE:To improve the barrier property by a method wherein a titanium nitride film to be a barrier metallic film is grown at specified heating temperature on a silicon substrate to form a Tin film at high temperature. CONSTITUTION:A PSG film 18 is formed on a silicon substrate 11 and after making a contact window, a Ti film 14 is formed by sputtering process to manufacture a wafer 22. Next, a Ti target 21 and the wafer 22 heated at 500 deg.C are oppositely arranged in a reaction chamber. Then, the Ti target 21 connected to a negative electrode 23 is supplied with power while TiN is grown on the wafer 22 in mixed gas of N2 and Ar by reactive sputtering process. Finally, an Al wiring 16 is grown by heating process at 200-300 deg.C on a TiN film 15 filmed on the primer Ti film 14.
JP23233487A 1987-09-18 1987-09-18 Manufacture of semiconductor device Pending JPS6477122A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP23233487A JPS6477122A (en) 1987-09-18 1987-09-18 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP23233487A JPS6477122A (en) 1987-09-18 1987-09-18 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS6477122A true JPS6477122A (en) 1989-03-23

Family

ID=16937569

Family Applications (1)

Application Number Title Priority Date Filing Date
JP23233487A Pending JPS6477122A (en) 1987-09-18 1987-09-18 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS6477122A (en)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5374592A (en) * 1992-09-22 1994-12-20 Sgs-Thomson Microelectronics, Inc. Method for forming an aluminum metal contact
US5397744A (en) * 1991-02-19 1995-03-14 Sony Corporation Aluminum metallization method
US5472912A (en) * 1989-11-30 1995-12-05 Sgs-Thomson Microelectronics, Inc. Method of making an integrated circuit structure by using a non-conductive plug
US5658828A (en) * 1989-11-30 1997-08-19 Sgs-Thomson Microelectronics, Inc. Method for forming an aluminum contact through an insulating layer
US5930673A (en) * 1990-11-05 1999-07-27 Stmicroelectronics, Inc. Method for forming a metal contact
US6242811B1 (en) 1989-11-30 2001-06-05 Stmicroelectronics, Inc. Interlevel contact including aluminum-refractory metal alloy formed during aluminum deposition at an elevated temperature
US6271137B1 (en) 1989-11-30 2001-08-07 Stmicroelectronics, Inc. Method of producing an aluminum stacked contact/via for multilayer
US6287963B1 (en) 1990-11-05 2001-09-11 Stmicroelectronics, Inc. Method for forming a metal contact
US6617242B1 (en) * 1989-11-30 2003-09-09 Stmicroelectronics, Inc. Method for fabricating interlevel contacts of aluminum/refractory metal alloys
US9107429B2 (en) 2004-03-19 2015-08-18 Dupont Nutrition Biosciences Aps Emulsifier composition for shortening

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5472912A (en) * 1989-11-30 1995-12-05 Sgs-Thomson Microelectronics, Inc. Method of making an integrated circuit structure by using a non-conductive plug
US5658828A (en) * 1989-11-30 1997-08-19 Sgs-Thomson Microelectronics, Inc. Method for forming an aluminum contact through an insulating layer
US5976969A (en) * 1989-11-30 1999-11-02 Stmicroelectronics, Inc. Method for forming an aluminum contact
US6242811B1 (en) 1989-11-30 2001-06-05 Stmicroelectronics, Inc. Interlevel contact including aluminum-refractory metal alloy formed during aluminum deposition at an elevated temperature
US6271137B1 (en) 1989-11-30 2001-08-07 Stmicroelectronics, Inc. Method of producing an aluminum stacked contact/via for multilayer
US6617242B1 (en) * 1989-11-30 2003-09-09 Stmicroelectronics, Inc. Method for fabricating interlevel contacts of aluminum/refractory metal alloys
US5930673A (en) * 1990-11-05 1999-07-27 Stmicroelectronics, Inc. Method for forming a metal contact
US6287963B1 (en) 1990-11-05 2001-09-11 Stmicroelectronics, Inc. Method for forming a metal contact
US5397744A (en) * 1991-02-19 1995-03-14 Sony Corporation Aluminum metallization method
US5374592A (en) * 1992-09-22 1994-12-20 Sgs-Thomson Microelectronics, Inc. Method for forming an aluminum metal contact
US6433435B2 (en) 1993-11-30 2002-08-13 Stmicroelectronics, Inc. Aluminum contact structure for integrated circuits
US9107429B2 (en) 2004-03-19 2015-08-18 Dupont Nutrition Biosciences Aps Emulsifier composition for shortening

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