JPS57145372A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS57145372A JPS57145372A JP56030499A JP3049981A JPS57145372A JP S57145372 A JPS57145372 A JP S57145372A JP 56030499 A JP56030499 A JP 56030499A JP 3049981 A JP3049981 A JP 3049981A JP S57145372 A JPS57145372 A JP S57145372A
- Authority
- JP
- Japan
- Prior art keywords
- film
- layer
- type
- region
- beneath
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- 229910052681 coesite Inorganic materials 0.000 abstract 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract 2
- 229910052682 stishovite Inorganic materials 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 229910052905 tridymite Inorganic materials 0.000 abstract 2
- 238000010438 heat treatment Methods 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 150000002500 ions Chemical class 0.000 abstract 1
- 230000002093 peripheral effect Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
Abstract
PURPOSE:To reduce the depletion layer capacity of a source and a drain and to expedite the operating speed, when a minute MOS transistor is manufactured, by providing a high impurity concentration region in a channel region beneath a gate electrode. CONSTITUTION:A thick field oxide film 302 is formed in the peripheral part of a P type Si substrate 301. A thin gate oxide film 303 is provided on the area of the surface of the substrate 301 between the parts of the film 302. An N type polycrystal Si layer 304 and an SiO2 film 305 are layered deposited on the entire surface. Then the area other the channel part of the transistor is coated by a resist film 306. B<+> ions are implanted in the entire surface, and a P<+> type region 307 is formed at the channel part corresponding to the opening part in the film 306. Thereafter, heat treatment is performed in HF gas, the film 305 beneath the film 306 is dissipated, and a gate SiO2 film 8 comprising the film 305 is left over the region 307. With the film 8 as a mask, the exposed part of the Si layer 304 is etched away, and the gate electrode comprising the layer 304 is formed beneath the film 308. Thereafter, N type source and drain electrodes 309 are formed on both sides of the electrode 304 in a usual manner.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56030499A JPS57145372A (en) | 1981-03-05 | 1981-03-05 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56030499A JPS57145372A (en) | 1981-03-05 | 1981-03-05 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS57145372A true JPS57145372A (en) | 1982-09-08 |
Family
ID=12305505
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56030499A Pending JPS57145372A (en) | 1981-03-05 | 1981-03-05 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57145372A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59121877A (en) * | 1982-12-28 | 1984-07-14 | Toshiba Corp | Manufacturing method of MIS type transistor |
| JP2014072235A (en) * | 2012-09-27 | 2014-04-21 | Seiko Instruments Inc | Semiconductor integrated circuit device |
-
1981
- 1981-03-05 JP JP56030499A patent/JPS57145372A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59121877A (en) * | 1982-12-28 | 1984-07-14 | Toshiba Corp | Manufacturing method of MIS type transistor |
| JP2014072235A (en) * | 2012-09-27 | 2014-04-21 | Seiko Instruments Inc | Semiconductor integrated circuit device |
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