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JPS57106046A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS57106046A
JPS57106046A JP55182335A JP18233580A JPS57106046A JP S57106046 A JPS57106046 A JP S57106046A JP 55182335 A JP55182335 A JP 55182335A JP 18233580 A JP18233580 A JP 18233580A JP S57106046 A JPS57106046 A JP S57106046A
Authority
JP
Japan
Prior art keywords
layer
type
epitaxial layer
implanted
ions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55182335A
Other languages
Japanese (ja)
Inventor
Satoshi Shinozaki
Kazuyoshi Shinada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP55182335A priority Critical patent/JPS57106046A/en
Publication of JPS57106046A publication Critical patent/JPS57106046A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Bipolar Transistors (AREA)
  • Element Separation (AREA)

Abstract

PURPOSE:To hold uniform distribution of impurity and to contrive to enhance integration of a semiconductor device by a method wherein unidirectionally conductive type impurity ions are implanted to the prescribed position of a semiconductor substrate, and after it is annealed with an ion beam, an epitaxial layer is provided to form an element. CONSTITUTION:A resist mask 32 is applied on the P type Si substrate 30, and As ions 34 are implanted therein to form an N type layer 36. The mask 32 is removed, the surface of the substrate is heated with the Ar continuous wave laser to ionize As in the layer 36, and an N<+> type buried layer is formed. Annealing is performed as to hardly destroy distribution formed when As ions are implanted at first by selecting irradiating intensity and irradiating time, and the crystal defect is restored. Then the N type epitaxial layer 44 is formed thereon, and the element is formed in the layer 44 to complete the device 45. By this constitution, the autodoping effect to be generated when the epitaxial layer is made to grow cab be reduced, concentration of impurity in the epitaxial layer can be unified, and when isolation of elements is performed by this method, integration can be enhanced.
JP55182335A 1980-12-23 1980-12-23 Manufacture of semiconductor device Pending JPS57106046A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55182335A JPS57106046A (en) 1980-12-23 1980-12-23 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55182335A JPS57106046A (en) 1980-12-23 1980-12-23 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS57106046A true JPS57106046A (en) 1982-07-01

Family

ID=16116503

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55182335A Pending JPS57106046A (en) 1980-12-23 1980-12-23 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS57106046A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001035452A1 (en) * 1999-11-10 2001-05-17 Shin-Etsu Handotai Co., Ltd. Production method for silicon epitaxial wafer and silicon epitaxial wafer

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5157172A (en) * 1974-09-19 1976-05-19 Western Electric Co
JPS5494885A (en) * 1977-12-30 1979-07-26 Ibm Method of fabricating ic semiconductor
JPS5624954A (en) * 1979-08-08 1981-03-10 Hitachi Ltd Formation of buried layer

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5157172A (en) * 1974-09-19 1976-05-19 Western Electric Co
JPS5494885A (en) * 1977-12-30 1979-07-26 Ibm Method of fabricating ic semiconductor
JPS5624954A (en) * 1979-08-08 1981-03-10 Hitachi Ltd Formation of buried layer

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001035452A1 (en) * 1999-11-10 2001-05-17 Shin-Etsu Handotai Co., Ltd. Production method for silicon epitaxial wafer and silicon epitaxial wafer
US6589336B1 (en) 1999-11-10 2003-07-08 Shin-Etsu Handotai Co., Ltd. Production method for silicon epitaxial wafer and silicon epitaxial wafer

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