[go: up one dir, main page]

JPS567439A - Treating method for semiconductor substrate - Google Patents

Treating method for semiconductor substrate

Info

Publication number
JPS567439A
JPS567439A JP8321079A JP8321079A JPS567439A JP S567439 A JPS567439 A JP S567439A JP 8321079 A JP8321079 A JP 8321079A JP 8321079 A JP8321079 A JP 8321079A JP S567439 A JPS567439 A JP S567439A
Authority
JP
Japan
Prior art keywords
regions
damaged
heated
beams
irradiated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8321079A
Other languages
Japanese (ja)
Other versions
JPS6125214B2 (en
Inventor
Takanori Hayafuji
Yoshio Aoki
Seiji Kawato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP8321079A priority Critical patent/JPS567439A/en
Publication of JPS567439A publication Critical patent/JPS567439A/en
Publication of JPS6125214B2 publication Critical patent/JPS6125214B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P34/42—

Landscapes

  • Laser Beam Processing (AREA)
  • Semiconductor Memories (AREA)

Abstract

PURPOSE:To prevent the generation of unnecessary thermal stress and pollution in a semiconductor element by a method wherein beams are locally irradiated only to fixed portions containing damaged regions and the portions are heated. CONSTITUTION:Laser beams, etc. are irradiated to inactive regions having no effect on characteristics on a semiconductor wafer or element, and grid damage is given to the regions. The damaged regions 2 and their near regions are locally heated by laser beams 4, whose area are larger than the regions 2. In this case, the damaged regions 2 heated have gettering action, and the heating regions 5 near the regions 2 are clarified by gettering. According to this method, the diameters of thermic ray beams 3, 4 can arbitrarily be adjusted, and treatment is easy. When an element is formed at an appropriate location of the heating regions 5 except the damaged regions 2, its characteristic is excellent.
JP8321079A 1979-06-29 1979-06-29 Treating method for semiconductor substrate Granted JPS567439A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8321079A JPS567439A (en) 1979-06-29 1979-06-29 Treating method for semiconductor substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8321079A JPS567439A (en) 1979-06-29 1979-06-29 Treating method for semiconductor substrate

Publications (2)

Publication Number Publication Date
JPS567439A true JPS567439A (en) 1981-01-26
JPS6125214B2 JPS6125214B2 (en) 1986-06-14

Family

ID=13795954

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8321079A Granted JPS567439A (en) 1979-06-29 1979-06-29 Treating method for semiconductor substrate

Country Status (1)

Country Link
JP (1) JPS567439A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59115530A (en) * 1982-12-15 1984-07-04 ワツカ−−ヘミトロニク・ゲゼルシヤフト・フユア・エレクトロニク−グルントシユトツフエ・ミツト・ベシユレンクテル・ハフツング Method of producing semiconductor wafer with back surface gettering action
WO1990000812A1 (en) * 1988-07-08 1990-01-25 Engelsberg Audrey C Removal of surface contaminants by irradiation from a high-energy source
US5099557A (en) * 1988-07-08 1992-03-31 Engelsberg Audrey C Removal of surface contaminants by irradiation from a high-energy source
US5531857A (en) * 1988-07-08 1996-07-02 Cauldron Limited Partnership Removal of surface contaminants by irradiation from a high energy source
US5821175A (en) * 1988-07-08 1998-10-13 Cauldron Limited Partnership Removal of surface contaminants by irradiation using various methods to achieve desired inert gas flow over treated surface

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59115530A (en) * 1982-12-15 1984-07-04 ワツカ−−ヘミトロニク・ゲゼルシヤフト・フユア・エレクトロニク−グルントシユトツフエ・ミツト・ベシユレンクテル・ハフツング Method of producing semiconductor wafer with back surface gettering action
WO1990000812A1 (en) * 1988-07-08 1990-01-25 Engelsberg Audrey C Removal of surface contaminants by irradiation from a high-energy source
US5024968A (en) * 1988-07-08 1991-06-18 Engelsberg Audrey C Removal of surface contaminants by irradiation from a high-energy source
US5099557A (en) * 1988-07-08 1992-03-31 Engelsberg Audrey C Removal of surface contaminants by irradiation from a high-energy source
US5531857A (en) * 1988-07-08 1996-07-02 Cauldron Limited Partnership Removal of surface contaminants by irradiation from a high energy source
US5821175A (en) * 1988-07-08 1998-10-13 Cauldron Limited Partnership Removal of surface contaminants by irradiation using various methods to achieve desired inert gas flow over treated surface

Also Published As

Publication number Publication date
JPS6125214B2 (en) 1986-06-14

Similar Documents

Publication Publication Date Title
SE7702883L (en) REDUCING THE SWITCHING TIME OF SEMICONDUCTOR DEVICES BY NUCLEAR IRRADIATION
JPS5731144A (en) Mamufacture of semiconductor device
JPS5567132A (en) Method for manufacturing semiconductor device
JPS567439A (en) Treating method for semiconductor substrate
JPS55150239A (en) Heat treating method
JPS566432A (en) Treatment of semiconductor substrate
JPS567436A (en) High pressure treating device
JPS56105641A (en) Semiconductor device
JPS5352354A (en) Semiconductor local heating method
JPS5420671A (en) Production of semiconductor devices
JPS57136334A (en) Manufacture of semiconductor device
JPS57177530A (en) Processing of semiconductor wafer
JPS5568638A (en) Treating method of semiconductor surface with heat
JPS55111170A (en) Method of manufacturing semiconductor device
JPS56130914A (en) Manufacture of semiconductor device
JPS5533020A (en) Manufacture of semiconductor device
JPS566434A (en) Manufacture of semiconductor device
JPS5710939A (en) Manufacture of semiconductor device
JPS5586123A (en) Manufacture of semiconductor device
JPS5621336A (en) Manufacture of semiconductor device
JPS59112617A (en) Laser annealing method for semiconductor device
JPS54140461A (en) Manufacture of semiconductor device
JPS5530806A (en) Heat treatment method of semiconductor wafer
JPS57198625A (en) Manufacture of semiconductor device
JPS57113233A (en) Manufacture of semiconductor device