JPS5690608A - Differential amplifier using mis transistor with v type channel - Google Patents
Differential amplifier using mis transistor with v type channelInfo
- Publication number
- JPS5690608A JPS5690608A JP16737179A JP16737179A JPS5690608A JP S5690608 A JPS5690608 A JP S5690608A JP 16737179 A JP16737179 A JP 16737179A JP 16737179 A JP16737179 A JP 16737179A JP S5690608 A JPS5690608 A JP S5690608A
- Authority
- JP
- Japan
- Prior art keywords
- source
- drain
- diffused
- channel
- type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005530 etching Methods 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 230000000295 complement effect Effects 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Landscapes
- Amplifiers (AREA)
Abstract
PURPOSE: To reduce plane area by V-shaped etching.
CONSTITUTION: On the etched surface obtained by etching the surface of silicon 1 in a V shape, complementary MOSFET is formed. Namely, P channel FET part 3 consists of N+ source 5, N+ drain 6, channel part 7 diffused into the P type, oxidized insulating film 8, gate electrode 9, and contacts 10 and 11 of the source and drain. Further, n channel FET part 4, provided in P- well 2 on N- substrate 1, is composed of source and drain 12 and 13 diffused into the N+ type, channel part 14 diffused into the n type, oxidized film 15, Al gate 16, and source and drain contacts 17 and 18. The effective channel length is determined by the length of etched surfaces of high-concentration diffused layers 7 and 14.
COPYRIGHT: (C)1981,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16737179A JPS5690608A (en) | 1979-12-22 | 1979-12-22 | Differential amplifier using mis transistor with v type channel |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16737179A JPS5690608A (en) | 1979-12-22 | 1979-12-22 | Differential amplifier using mis transistor with v type channel |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5690608A true JPS5690608A (en) | 1981-07-22 |
Family
ID=15848465
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP16737179A Pending JPS5690608A (en) | 1979-12-22 | 1979-12-22 | Differential amplifier using mis transistor with v type channel |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5690608A (en) |
-
1979
- 1979-12-22 JP JP16737179A patent/JPS5690608A/en active Pending
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