JPS5688372A - Manufacture of semiconductor diaphragm - Google Patents
Manufacture of semiconductor diaphragmInfo
- Publication number
- JPS5688372A JPS5688372A JP16601479A JP16601479A JPS5688372A JP S5688372 A JPS5688372 A JP S5688372A JP 16601479 A JP16601479 A JP 16601479A JP 16601479 A JP16601479 A JP 16601479A JP S5688372 A JPS5688372 A JP S5688372A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- diaphragm
- etching
- thickness
- type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000000758 substrate Substances 0.000 abstract 6
- 238000005530 etching Methods 0.000 abstract 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Pressure Sensors (AREA)
Abstract
PURPOSE:To form the thickness of the diaphragm as prescribed by forming a p-n junction for specifying the thickness of the diaphragm on a semiconductor substrate formed with a shallow gauge resistance region on the surface, etching it and finishing the etching when the p-n junction is exposed. CONSTITUTION:An SiO2 film 2 is covered on the surface of an n type Si substrate 1 formed with a plurality of p type gauge resistors 9 on the surface, two windows are opened at the region isolated from the resistors 9, p type regions 3, 5 are diffused in the substrate 1, and p-n junctions 4, 6 are formed between them and the substrate 1. Then, a series circuit having a DC power source 11 and an ammeter 12, a variable resistor 13 is connected between the electrodes 7 and 8 mounted on the regions 3 and 5 respectively, the substrate 1 is etched using a mask 10 formed on the back surface of the substrate 1, the time when the junctions 4 and 6 are exposed is notified by the fluctuation of the ammeter 12, and the etching is thus stopped thereat. Thus, the diaphragm having prescribed thickness can be obtained under the resistor 9.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16601479A JPS5688372A (en) | 1979-12-19 | 1979-12-19 | Manufacture of semiconductor diaphragm |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16601479A JPS5688372A (en) | 1979-12-19 | 1979-12-19 | Manufacture of semiconductor diaphragm |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5688372A true JPS5688372A (en) | 1981-07-17 |
| JPS6154268B2 JPS6154268B2 (en) | 1986-11-21 |
Family
ID=15823297
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16601479A Granted JPS5688372A (en) | 1979-12-19 | 1979-12-19 | Manufacture of semiconductor diaphragm |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5688372A (en) |
-
1979
- 1979-12-19 JP JP16601479A patent/JPS5688372A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6154268B2 (en) | 1986-11-21 |
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