JPS5568672A - Fabrication of semiconductor device - Google Patents
Fabrication of semiconductor deviceInfo
- Publication number
- JPS5568672A JPS5568672A JP14273878A JP14273878A JPS5568672A JP S5568672 A JPS5568672 A JP S5568672A JP 14273878 A JP14273878 A JP 14273878A JP 14273878 A JP14273878 A JP 14273878A JP S5568672 A JPS5568672 A JP S5568672A
- Authority
- JP
- Japan
- Prior art keywords
- region
- substrate
- type
- film
- diffused
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000000758 substrate Substances 0.000 abstract 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- 239000012535 impurity Substances 0.000 abstract 4
- 229910052681 coesite Inorganic materials 0.000 abstract 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract 2
- 229910052682 stishovite Inorganic materials 0.000 abstract 2
- 229910052905 tridymite Inorganic materials 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 238000002955 isolation Methods 0.000 abstract 1
- 238000004904 shortening Methods 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D18/00—Thyristors
- H10D18/01—Manufacture or treatment
- H10D18/031—Manufacture or treatment of lateral or planar thyristors
Landscapes
- Thyristors (AREA)
Abstract
PURPOSE:To reduce the ON voltage and trigger current of a thyristor while shortening the step of fabricating a semiconductor device by similarly diffusing opposite conductivity layers on both front and back surfaces of a one-conductivity semiconductor substrate and etching to remove one layer until the surface becomes predetermined impurity density. CONSTITUTION:SiO2 films 10, 11 are coated on both front and back surfaces of an n-type silicon substrate 1, openings 12, 13 are perforated on both ends thereof, and p-type impurity is diffused thereat to thereby form a p-type isolation region 4 in the substrate 1. Then, an opening 14 is perforated at the surface film 10, the back film 11 is removed, the p-type impurity is diffused thereat, a p-type gate region 2 is formed in the substrate 1 exposed with the opening 14, and a p-type anode region 3 is simultaneously formed on the back surface of the substrate 1 to thereby connect the region 3 to the region 4. Then, the film 10 is removed, the surface of the exposed substrate 1 is polished, the region 2 is formed thinner than the region 3 by t1-t2 so as to set the surface impurity density to predetermined value. Then, the entire surface is coated by a SiO2 film 9, an opening 15 is perforated, and an n-type cathode region 5 is diffused in the region 2.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14273878A JPS5568672A (en) | 1978-11-18 | 1978-11-18 | Fabrication of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14273878A JPS5568672A (en) | 1978-11-18 | 1978-11-18 | Fabrication of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5568672A true JPS5568672A (en) | 1980-05-23 |
Family
ID=15322424
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14273878A Pending JPS5568672A (en) | 1978-11-18 | 1978-11-18 | Fabrication of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5568672A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006073710A (en) * | 2004-09-01 | 2006-03-16 | Sanken Electric Co Ltd | Semiconductor device and manufacturing method of semiconductor device |
-
1978
- 1978-11-18 JP JP14273878A patent/JPS5568672A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006073710A (en) * | 2004-09-01 | 2006-03-16 | Sanken Electric Co Ltd | Semiconductor device and manufacturing method of semiconductor device |
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