JPS5685866A - Mos semiconductor device and manufacture thereof - Google Patents
Mos semiconductor device and manufacture thereofInfo
- Publication number
- JPS5685866A JPS5685866A JP16154579A JP16154579A JPS5685866A JP S5685866 A JPS5685866 A JP S5685866A JP 16154579 A JP16154579 A JP 16154579A JP 16154579 A JP16154579 A JP 16154579A JP S5685866 A JPS5685866 A JP S5685866A
- Authority
- JP
- Japan
- Prior art keywords
- film
- mask
- gate
- forming
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000000758 substrate Substances 0.000 abstract 3
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 abstract 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 239000012535 impurity Substances 0.000 abstract 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 abstract 1
- 229960000583 acetic acid Drugs 0.000 abstract 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 239000012362 glacial acetic acid Substances 0.000 abstract 1
- 150000002500 ions Chemical class 0.000 abstract 1
- 229910017604 nitric acid Inorganic materials 0.000 abstract 1
- 229920002120 photoresistant polymer Polymers 0.000 abstract 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 1
- 230000000717 retained effect Effects 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
Abstract
PURPOSE:To obtain an MOS semiconductor device having preferable frequency characteristics by forming a gate electrode through a gate insulating film on the surface of a semiconductor substrate when forming the source and drain regions of an MISFET, forming a mask having a size larger than the electrode thereon and introducing impurity in a self-alignment. CONSTITUTION:A gate SiO2 film 2 and an Mo film 3 becoming later a gate electrode are laminated on a p type Si substrate 1, a polycrystalline Si film 6 is accumulated thereon, is treated with photoresist, and a mask having a predetermined size is formed thereon. Subsequently, with this mask the exposed film 3 is etched and removed using a solution containing phosphoric acid, nitric acid and glacial acetic acid, and the film 3 retained under the film 6 is sidewisely etched. Thereafter, with the extended film 6 as a mask n type impurity ions are implanted into the substrate 1 through the film 2, it is heat treated, n<+> type source and drain regions 4 and 5 are formed at both sides of the Mo gate film 3, and unnecessary film 6 is then removed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16154579A JPS5685866A (en) | 1979-12-14 | 1979-12-14 | Mos semiconductor device and manufacture thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16154579A JPS5685866A (en) | 1979-12-14 | 1979-12-14 | Mos semiconductor device and manufacture thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5685866A true JPS5685866A (en) | 1981-07-13 |
Family
ID=15737134
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16154579A Pending JPS5685866A (en) | 1979-12-14 | 1979-12-14 | Mos semiconductor device and manufacture thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5685866A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62105473A (en) * | 1985-10-31 | 1987-05-15 | Mitsubishi Electric Corp | Semiconductor device |
| US5115290A (en) * | 1989-09-06 | 1992-05-19 | Kabushiki Kaisha Toshiba | Mos type semiconductor device and method for manufacturing the same |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52103974A (en) * | 1976-02-26 | 1977-08-31 | Nec Corp | Semicondcutor integrated circuit device |
| JPS53112679A (en) * | 1977-03-14 | 1978-10-02 | Hitachi Ltd | Manufacture for mis type semiconductor device |
-
1979
- 1979-12-14 JP JP16154579A patent/JPS5685866A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52103974A (en) * | 1976-02-26 | 1977-08-31 | Nec Corp | Semicondcutor integrated circuit device |
| JPS53112679A (en) * | 1977-03-14 | 1978-10-02 | Hitachi Ltd | Manufacture for mis type semiconductor device |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62105473A (en) * | 1985-10-31 | 1987-05-15 | Mitsubishi Electric Corp | Semiconductor device |
| US5115290A (en) * | 1989-09-06 | 1992-05-19 | Kabushiki Kaisha Toshiba | Mos type semiconductor device and method for manufacturing the same |
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