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JPS56112758A - Insulated gate type semiconductor device and manufacture thereof - Google Patents

Insulated gate type semiconductor device and manufacture thereof

Info

Publication number
JPS56112758A
JPS56112758A JP1487680A JP1487680A JPS56112758A JP S56112758 A JPS56112758 A JP S56112758A JP 1487680 A JP1487680 A JP 1487680A JP 1487680 A JP1487680 A JP 1487680A JP S56112758 A JPS56112758 A JP S56112758A
Authority
JP
Japan
Prior art keywords
aluminum
substrate
films
oxide film
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1487680A
Other languages
Japanese (ja)
Inventor
Seiichi Iwamatsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Original Assignee
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHIYOU LSI GIJUTSU KENKYU KUMIAI, CHO LSI GIJUTSU KENKYU KUMIAI filed Critical CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority to JP1487680A priority Critical patent/JPS56112758A/en
Publication of JPS56112758A publication Critical patent/JPS56112758A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE:To form a source and a drain by self-alignment in the semiconductor device by forming an extremely thin aluminum oxide film on the side surfaces of an aluminum gate electrode on an insulating film of a semiconductor substrate and injecting conductivity determining impurity ions into the substrate with the electrode as a mask. CONSTITUTION:Aluminum films 13, 14 becoming aluminum gate electrodes are formed on a P type silicon substrate 8 having a field oxide film 11 and a gate oxide film 12. With the aluminum film and photoresist films 15, 16 as masks the oxide film 12 is etched, and a part of the surface of the substrate is exposed. At this time sulfuric acid of approx. 1% is added to the etchant, and aluminum oxide films 17, 18 having a thickness of 1,000Angstrom are formed on the side surfaces of the films 13, 14 respectively. N type impurity ions such as P, Sb or the like are injected on the surface of the exposed substrate, and N type source and drain regions 19, 20 are formed. Thus, an extremely thin aluminum gate electrode is formed by a low temperature treatment with preferable reproducibility in a self-aligned MISFET.
JP1487680A 1980-02-12 1980-02-12 Insulated gate type semiconductor device and manufacture thereof Pending JPS56112758A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1487680A JPS56112758A (en) 1980-02-12 1980-02-12 Insulated gate type semiconductor device and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1487680A JPS56112758A (en) 1980-02-12 1980-02-12 Insulated gate type semiconductor device and manufacture thereof

Publications (1)

Publication Number Publication Date
JPS56112758A true JPS56112758A (en) 1981-09-05

Family

ID=11873207

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1487680A Pending JPS56112758A (en) 1980-02-12 1980-02-12 Insulated gate type semiconductor device and manufacture thereof

Country Status (1)

Country Link
JP (1) JPS56112758A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11168212A (en) * 1997-12-02 1999-06-22 Tadahiro Omi Semiconductor device
JP2007036116A (en) * 2005-07-29 2007-02-08 Renesas Technology Corp Semiconductor device manufacturing method

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11168212A (en) * 1997-12-02 1999-06-22 Tadahiro Omi Semiconductor device
JP2007036116A (en) * 2005-07-29 2007-02-08 Renesas Technology Corp Semiconductor device manufacturing method

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