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JPS5680144A - Preparation of semiconductor device - Google Patents

Preparation of semiconductor device

Info

Publication number
JPS5680144A
JPS5680144A JP15831079A JP15831079A JPS5680144A JP S5680144 A JPS5680144 A JP S5680144A JP 15831079 A JP15831079 A JP 15831079A JP 15831079 A JP15831079 A JP 15831079A JP S5680144 A JPS5680144 A JP S5680144A
Authority
JP
Japan
Prior art keywords
film
mo2n
patterned
reduced
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15831079A
Other languages
Japanese (ja)
Other versions
JPS6148262B2 (en
Inventor
Hiroshi Tokunaga
Nobuo Toyokura
Shinichi Inoue
Hajime Ishikawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP15831079A priority Critical patent/JPS5680144A/en
Publication of JPS5680144A publication Critical patent/JPS5680144A/en
Publication of JPS6148262B2 publication Critical patent/JPS6148262B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE:To form more microscopic electrodes and wiring on a semiconductor substrate by patterning a nitride film of a metal having a high melting point, then reducing a part of periphery of the patterned film to remove and reducing the remaining nitride film again. CONSTITUTION:In the process to form a gate electrode 2G of an MISFET semiconductor device 1, on a gate insulating film 2 an Mo2N film 3 and an Si4N4 film 4 are provided and patterned. The periphery 3RED of the patterned Mo2N film is reduced into an Mo layer. After the Si4N4 film 4 and the peripheral reduced Mo layer 3RED are removed, the remaining Mo2N film 3 is reduced again to form an Mo gate electrode 3G. Said procedure permits more microscopic electrodes and wiring to be formed beyond the micrifiable limit of patterning.
JP15831079A 1979-12-06 1979-12-06 Preparation of semiconductor device Granted JPS5680144A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15831079A JPS5680144A (en) 1979-12-06 1979-12-06 Preparation of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15831079A JPS5680144A (en) 1979-12-06 1979-12-06 Preparation of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5680144A true JPS5680144A (en) 1981-07-01
JPS6148262B2 JPS6148262B2 (en) 1986-10-23

Family

ID=15668826

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15831079A Granted JPS5680144A (en) 1979-12-06 1979-12-06 Preparation of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5680144A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4640004A (en) * 1984-04-13 1987-02-03 Fairchild Camera & Instrument Corp. Method and structure for inhibiting dopant out-diffusion
US4829363A (en) * 1984-04-13 1989-05-09 Fairchild Camera And Instrument Corp. Structure for inhibiting dopant out-diffusion

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4640004A (en) * 1984-04-13 1987-02-03 Fairchild Camera & Instrument Corp. Method and structure for inhibiting dopant out-diffusion
US4829363A (en) * 1984-04-13 1989-05-09 Fairchild Camera And Instrument Corp. Structure for inhibiting dopant out-diffusion

Also Published As

Publication number Publication date
JPS6148262B2 (en) 1986-10-23

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