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JPS5646538A - Manufacture of compound semiconductor device - Google Patents

Manufacture of compound semiconductor device

Info

Publication number
JPS5646538A
JPS5646538A JP12304479A JP12304479A JPS5646538A JP S5646538 A JPS5646538 A JP S5646538A JP 12304479 A JP12304479 A JP 12304479A JP 12304479 A JP12304479 A JP 12304479A JP S5646538 A JPS5646538 A JP S5646538A
Authority
JP
Japan
Prior art keywords
substrate
compound semiconductor
layers
layer
sold
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12304479A
Other languages
Japanese (ja)
Inventor
Yoji Kato
Jiro Kasahara
Shozo Watabe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP12304479A priority Critical patent/JPS5646538A/en
Publication of JPS5646538A publication Critical patent/JPS5646538A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H01L21/3245—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering of AIIIBV compounds

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE:To obtain a desired impurity density layer in a compound semiconductor device by growing in vapor phase a Cr-doped high resistance layer on a compound semiconductor sold in a market, implanting selectively impurity ions and activating it without particular protective film. CONSTITUTION:A Cr-added high resistance GaAs substrate 1 sold in a market is disposed in a low temperature portion and a Ga22 is disposed in a high temperature portion in a reaction tube 20, and an AsCl3 is introduced thereinto together with a carrier gas H2. Further, a CrO2Cl3 in a tank 27 is introduced thereinto in bubbled state with the H2 from the opposite side to be supplied from the intermediate position between the Ga source and the substrate. As a result, there can be obtained a GaAs layer 4 thus increased in resistance by adding the Cr thereto. Then, ions are implanted with a resist mask 5, and n type layers 2, 3 are formed thereon. Subsequently, the substrate 6 is contained in a furnace core tube 30, the partial pressure of the As is so selected in the furnace core tube 30 as to become higher than the partial pressure of the As produced by the thermal decomposition of the AsGa 4 and the substrate 1, and is heat treated. Thus, the layers 2, 3 having desired density range can be obtained on the GaAs substrate 6 without entirely deteriorating the surfaces of the layers 2, 3 wherein no mask is employed.
JP12304479A 1979-09-25 1979-09-25 Manufacture of compound semiconductor device Pending JPS5646538A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12304479A JPS5646538A (en) 1979-09-25 1979-09-25 Manufacture of compound semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12304479A JPS5646538A (en) 1979-09-25 1979-09-25 Manufacture of compound semiconductor device

Publications (1)

Publication Number Publication Date
JPS5646538A true JPS5646538A (en) 1981-04-27

Family

ID=14850812

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12304479A Pending JPS5646538A (en) 1979-09-25 1979-09-25 Manufacture of compound semiconductor device

Country Status (1)

Country Link
JP (1) JPS5646538A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5742123A (en) * 1980-08-28 1982-03-09 Toshiba Corp Manufacture of compound semiconductor device
JPS60215719A (en) * 1984-04-07 1985-10-29 Nippon Steel Corp Manufacture of electric welded steel pipe for front fork of bicycle
JPH0463242A (en) * 1990-07-02 1992-02-28 Nippon Steel Corp Steel tube for reinforcing car body

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5742123A (en) * 1980-08-28 1982-03-09 Toshiba Corp Manufacture of compound semiconductor device
JPS60215719A (en) * 1984-04-07 1985-10-29 Nippon Steel Corp Manufacture of electric welded steel pipe for front fork of bicycle
JPH0463242A (en) * 1990-07-02 1992-02-28 Nippon Steel Corp Steel tube for reinforcing car body
US5181974A (en) * 1990-07-02 1993-01-26 Nippon Steel Corporation Automobile body reinforcing steel pipe
US5192376A (en) * 1990-07-02 1993-03-09 Nippon Steel Corporation Process for producing automobile body reinforcing steel pipe

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