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JPS5772390A - Manufacture of schottky barrier diode - Google Patents

Manufacture of schottky barrier diode

Info

Publication number
JPS5772390A
JPS5772390A JP55148696A JP14869680A JPS5772390A JP S5772390 A JPS5772390 A JP S5772390A JP 55148696 A JP55148696 A JP 55148696A JP 14869680 A JP14869680 A JP 14869680A JP S5772390 A JPS5772390 A JP S5772390A
Authority
JP
Japan
Prior art keywords
layer
barrier
thickness
schottky barrier
barrier diode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55148696A
Other languages
Japanese (ja)
Inventor
Minoru Kato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP55148696A priority Critical patent/JPS5772390A/en
Publication of JPS5772390A publication Critical patent/JPS5772390A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/60—Schottky-barrier diodes 

Landscapes

  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE:To obtain the Schottky barrier diode having excellent characteristics at high power by controlling the value of barrier height by the thickness of a nickel layer and the thickness of a platinum layer used as barrier metals and the temperature of heat treatment. CONSTITUTION:An epitaxial layer 2 is grown on an Si substrate 1, oxide films 3 for passivation are formed on the surface through a gaseous phase growth method, and the oxide films at a barrier layer forming predetermining section are removed. Ni is evaporated under the pressure of value such s 1X10<-6> Torr or lower and the Ni layer 4 with approximately 1,000Angstrom thickness is shaped, and Pt is evaporated and the Pt layer 5 with approximately 1,000Angstrom thickness is formed. The whole is thermally treated at 400 deg.C-600 deg.C in an inert gas atmosphere, a barrier layer 6 is shaped and Ni and Pt not reacted are removed. And the high power type Schottky barrier diode with the barrier layer 6 lower than a barrier layer consisting of the Pt layer in the barrier height can be obtained by forming an electrode 7.
JP55148696A 1980-10-23 1980-10-23 Manufacture of schottky barrier diode Pending JPS5772390A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55148696A JPS5772390A (en) 1980-10-23 1980-10-23 Manufacture of schottky barrier diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55148696A JPS5772390A (en) 1980-10-23 1980-10-23 Manufacture of schottky barrier diode

Publications (1)

Publication Number Publication Date
JPS5772390A true JPS5772390A (en) 1982-05-06

Family

ID=15458549

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55148696A Pending JPS5772390A (en) 1980-10-23 1980-10-23 Manufacture of schottky barrier diode

Country Status (1)

Country Link
JP (1) JPS5772390A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59111375A (en) * 1982-12-08 1984-06-27 エヌ・ベ−・フイリップス・フル−イランペンファブリケン Semiconductor device and method of producing same
CN107564813A (en) * 2017-08-30 2018-01-09 吉林麦吉柯半导体有限公司 The twice annealing manufacture method of Schottky diode

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59111375A (en) * 1982-12-08 1984-06-27 エヌ・ベ−・フイリップス・フル−イランペンファブリケン Semiconductor device and method of producing same
JPH0455348B2 (en) * 1982-12-08 1992-09-03 Fuiritsupusu Furuuiranpenfuaburiken Nv
CN107564813A (en) * 2017-08-30 2018-01-09 吉林麦吉柯半导体有限公司 The twice annealing manufacture method of Schottky diode

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