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JPS56162841A - Forming method for insulating film of compound semiconductor - Google Patents

Forming method for insulating film of compound semiconductor

Info

Publication number
JPS56162841A
JPS56162841A JP6597180A JP6597180A JPS56162841A JP S56162841 A JPS56162841 A JP S56162841A JP 6597180 A JP6597180 A JP 6597180A JP 6597180 A JP6597180 A JP 6597180A JP S56162841 A JPS56162841 A JP S56162841A
Authority
JP
Japan
Prior art keywords
insulating film
tube
compound semiconductor
approx
forming method
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6597180A
Other languages
Japanese (ja)
Inventor
Masashi Yamaguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP6597180A priority Critical patent/JPS56162841A/en
Publication of JPS56162841A publication Critical patent/JPS56162841A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE:To obtain an insulating film which has uniform and excellent insulating characteristic and thermal stability by heat treating the III-V group compound semiconductors at the predetermined temperature range in an ammonia gas atmosphere and forming the insulating film made of nitride of ingredient element on the surface of the semiconductor. CONSTITUTION:InP single crystal 5 of compound semiconductor is placed in a reaction tube 6 which is evacuated in vacuum to approx. 10<-5>Torr, and highly pure ammonia gas 4 is filled in the tube to maintain the tube at 1 atm. The tube is inserted into an electric furnace 8, is heat treated at approx. 400-650 deg.C for 1- 64hr, and an insulating film 9 of nitride made of InN, PN having a thickness of 100-1000Angstrom is formed on the surface of the single crystal. Thus, the insulating film of the compound semiconductor having uniform and excellent insulating characteristics and thermal stability can be formed.
JP6597180A 1980-05-20 1980-05-20 Forming method for insulating film of compound semiconductor Pending JPS56162841A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6597180A JPS56162841A (en) 1980-05-20 1980-05-20 Forming method for insulating film of compound semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6597180A JPS56162841A (en) 1980-05-20 1980-05-20 Forming method for insulating film of compound semiconductor

Publications (1)

Publication Number Publication Date
JPS56162841A true JPS56162841A (en) 1981-12-15

Family

ID=13302387

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6597180A Pending JPS56162841A (en) 1980-05-20 1980-05-20 Forming method for insulating film of compound semiconductor

Country Status (1)

Country Link
JP (1) JPS56162841A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1120821A2 (en) * 2000-01-27 2001-08-01 Riken Process for formation of cap layer for semiconductor
WO2002017450A1 (en) * 2000-08-22 2002-02-28 Mitsui Chemicals Inc. Method for manufacturing semiconductor laser device
JP2007152020A (en) * 2005-12-08 2007-06-21 Olympus Corp Endoscope apparatus
US8279273B2 (en) 2006-01-27 2012-10-02 Olympus Corporation Endoscope apparatus

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4931270A (en) * 1972-07-20 1974-03-20

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4931270A (en) * 1972-07-20 1974-03-20

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1120821A2 (en) * 2000-01-27 2001-08-01 Riken Process for formation of cap layer for semiconductor
EP1120821A3 (en) * 2000-01-27 2004-07-28 Riken Process for formation of cap layer for semiconductor
WO2002017450A1 (en) * 2000-08-22 2002-02-28 Mitsui Chemicals Inc. Method for manufacturing semiconductor laser device
US6703254B2 (en) 2000-08-22 2004-03-09 Mitsui Chemicals, Inc. Method for manufacturing semiconductor laser device
JP2007152020A (en) * 2005-12-08 2007-06-21 Olympus Corp Endoscope apparatus
US8194380B2 (en) 2005-12-08 2012-06-05 Olympus Corporation Endoscope apparatus
US8279273B2 (en) 2006-01-27 2012-10-02 Olympus Corporation Endoscope apparatus

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