JPS56105672A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS56105672A JPS56105672A JP853180A JP853180A JPS56105672A JP S56105672 A JPS56105672 A JP S56105672A JP 853180 A JP853180 A JP 853180A JP 853180 A JP853180 A JP 853180A JP S56105672 A JPS56105672 A JP S56105672A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- psg
- segment
- melting point
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Bipolar Transistors (AREA)
Abstract
PURPOSE:To obtain a desired pattern by self-metching by a method wherein a layer of a material I and a layer of material II lower than the material I at melting point are layer-built to be formed on a semiconductor suhstrate, the material II being the prescribed pattern and the material I is selectively corroded with the pattern as a mask and after then, the material I is covered with the material II heated as high as the melting point or over. CONSTITUTION:An Si3N4 film 9 to be made the material I and PSG layer 10 of the material II decreased in the melting point by being contained with phosphorus of 5mol% or more are layer-built to be grown on an N type Si epitaxial layer 8. Then, the layer 10 is applied a photoetching to be made a PSG segment 11 of the desired pattern and the film 9 at the part exposed is etching-removed by hot phosphoric acid. Thereafter, the substrate 8 inlcuding the remained PSG segment 11 and an Si3N4 layer 12 under the segment 11 is applied a heat treatment at 1,050 deg.C in the atmosphere of boric gas to cause the PSG segment 11 of 980 deg.C at the melting point to be fused and to surround the film 12. At the same time, a BSG layer 13 liquified at about over 400 deg.C is spread all over the surface and the boron in the PSG is diffused to cause a P type region 14 to be produced in the substrate 8 around the film 12.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP853180A JPS56105672A (en) | 1980-01-28 | 1980-01-28 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP853180A JPS56105672A (en) | 1980-01-28 | 1980-01-28 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS56105672A true JPS56105672A (en) | 1981-08-22 |
Family
ID=11695724
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP853180A Pending JPS56105672A (en) | 1980-01-28 | 1980-01-28 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS56105672A (en) |
-
1980
- 1980-01-28 JP JP853180A patent/JPS56105672A/en active Pending
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