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JPS55163838A - Manufacturing for semiconductor device - Google Patents

Manufacturing for semiconductor device

Info

Publication number
JPS55163838A
JPS55163838A JP7273879A JP7273879A JPS55163838A JP S55163838 A JPS55163838 A JP S55163838A JP 7273879 A JP7273879 A JP 7273879A JP 7273879 A JP7273879 A JP 7273879A JP S55163838 A JPS55163838 A JP S55163838A
Authority
JP
Japan
Prior art keywords
substrate
pattern
photo resist
gas plasma
plasma
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7273879A
Other languages
Japanese (ja)
Inventor
Kazuya Kikuchi
Takashi Hirao
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP7273879A priority Critical patent/JPS55163838A/en
Publication of JPS55163838A publication Critical patent/JPS55163838A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation

Landscapes

  • Physics & Mathematics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)

Abstract

PURPOSE:To improve the heat resisting property of a photo resist film by processing the photo resist film in gas plasma of an inert gas. CONSTITUTION:A desired photo resist pattern 3 is formed on a semiconductor 1, on which a silicon oxidation film 2 has been formed, by photolithography process. The substrate 1 is heat-treated for about 1-20min in gas plasma 4 of an inert gas, for instance, N2 gas plasma of 0.2-1.0Torr and 20-300W, or CF4 gas plasma of 0.2-0.8Torr and 10-100W. Using a pattern 3' as a mask, an impurity ion 5 is injected as shown by arrows and an impurity added layer 6 is formed in the substrate 1. The pattern 3' is removed by O2 plasma. A heat-treatment is given to the substrate 1 and a diffusion layer 7, with impurities having a desired depth, is formed.
JP7273879A 1979-06-08 1979-06-08 Manufacturing for semiconductor device Pending JPS55163838A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7273879A JPS55163838A (en) 1979-06-08 1979-06-08 Manufacturing for semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7273879A JPS55163838A (en) 1979-06-08 1979-06-08 Manufacturing for semiconductor device

Publications (1)

Publication Number Publication Date
JPS55163838A true JPS55163838A (en) 1980-12-20

Family

ID=13497990

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7273879A Pending JPS55163838A (en) 1979-06-08 1979-06-08 Manufacturing for semiconductor device

Country Status (1)

Country Link
JP (1) JPS55163838A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02291122A (en) * 1989-04-28 1990-11-30 Fujitsu Ltd Manufacturing method of semiconductor device
JPH06151349A (en) * 1992-10-30 1994-05-31 Nec Corp Manufacture of semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02291122A (en) * 1989-04-28 1990-11-30 Fujitsu Ltd Manufacturing method of semiconductor device
JPH06151349A (en) * 1992-10-30 1994-05-31 Nec Corp Manufacture of semiconductor device

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