JPS5641182B1 - - Google Patents

Info

Publication number: JPS5641182B1
Authority: JP; Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Pending

Application number

JP1895971A

Other languages

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1970-10-27

Filing date

1971-03-30

Publication date

1981-09-26

1970-10-27 Priority to JP45094482A priority Critical patent/JPS5036955B1/ja

1971-03-26 Priority claimed from JP1822871A external-priority patent/JPS5341513B2/ja

1971-03-30 Application filed filed Critical

1971-03-30 Priority to JP1895971A priority patent/JPS5641182B1/ja

1971-10-20 Priority to DE19717139683U priority patent/DE7139683U/de

1971-10-20 Priority to DE2152225A priority patent/DE2152225C3/de

1971-10-27 Priority to FR7138633A priority patent/FR2111866B1/fr

1972-03-24 Priority to DE19722214305 priority patent/DE2214305A1/de

1973-09-11 Priority to US396223A priority patent/US3878549A/en

1981-09-26 Publication of JPS5641182B1 publication Critical patent/JPS5641182B1/ja

Status Pending legal-status Critical Current

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
- H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
- H01L21/02211—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
- H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
- H01L21/02236—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor
- H01L21/02238—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor silicon in uncombined form, i.e. pure silicon
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/02247—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by nitridation, e.g. nitridation of the substrate
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/02255—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by thermal treatment
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/68—Floating-gate IGFETs
- H10D30/681—Floating-gate IGFETs having only two programming levels
- H10D30/683—Floating-gate IGFETs having only two programming levels programmed by tunnelling of carriers, e.g. Fowler-Nordheim tunnelling
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

Engineering & Computer Science (AREA)
Computer Hardware Design (AREA)
Power Engineering (AREA)
Physics & Mathematics (AREA)
Condensed Matter Physics & Semiconductors (AREA)
General Physics & Mathematics (AREA)
Microelectronics & Electronic Packaging (AREA)
Manufacturing & Machinery (AREA)
Chemical & Material Sciences (AREA)
Ceramic Engineering (AREA)
Chemical Kinetics & Catalysis (AREA)
Insulated Gate Type Field-Effect Transistor (AREA)
Non-Volatile Memory (AREA)
Chemical Vapour Deposition (AREA)
Formation Of Insulating Films (AREA)

JP1895971A 1970-10-27 1971-03-30 Pending JPS5641182B1 (de)

Priority Applications (7)

Application Number	Priority Date	Filing Date	Title
JP45094482A JPS5036955B1 (de)	1970-10-27	1970-10-27
JP1895971A JPS5641182B1 (de)	1970-10-27	1971-03-30
DE19717139683U DE7139683U (de)	1970-10-27	1971-10-20	Halbleiteranordnung
DE2152225A DE2152225C3 (de)	1970-10-27	1971-10-20	MHISFET mit mindestens zwei zwischen Gate-Elektrode und Kanal angeordneten Isolierschichten, und Verfahren zu seiner Herstellung
FR7138633A FR2111866B1 (de)	1970-10-27	1971-10-27
DE19722214305 DE2214305A1 (de)	1970-10-27	1972-03-24	Verfahren zur Herstellung einer insbesondere für Speicherzwecke geeigneten Halbleitervorrichtung
US396223A US3878549A (en)	1970-10-27	1973-09-11	Semiconductor memories

Applications Claiming Priority (3)

Application Number	Priority Date	Filing Date
JP45094482A JPS5036955B1 (de)	1970-10-27	1970-10-27
JP1822871A JPS5341513B2 (de)	1971-03-26	1971-03-26
JP1895971A JPS5641182B1 (de)	1970-10-27	1971-03-30

Related Child Applications (2)

Application Number	Title	Priority Date	Filing Date
JP2350780A Division JPS5726469A (en)	1980-02-27	1980-02-27	Semiconductor memory device
JP9826880A Division JPS5726470A (en)	1980-07-18	1980-07-18	Semiconductor memory device and manufacture thereof

Publications (1)

Publication Number	Publication Date
JPS5641182B1 true JPS5641182B1 (de)	1981-09-26

Family

ID=33101866

Family Applications (2)

Application Number	Title	Priority Date	Filing Date
JP45094482A Pending JPS5036955B1 (de)	1970-10-27	1970-10-27
JP1895971A Pending JPS5641182B1 (de)	1970-10-27	1971-03-30

Family Applications Before (1)

Application Number	Title	Priority Date	Filing Date
JP45094482A Pending JPS5036955B1 (de)	1970-10-27	1970-10-27

Country Status (2)

Country	Link
JP (2)	JPS5036955B1 (de)
DE (2)	DE2152225C3 (de)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS5228200U (de) *	1975-08-16	1977-02-26
JP3613594B2 (ja) *	1993-08-19	2005-01-26	株式会社ルネサステクノロジ	半導体素子およびこれを用いた半導体記憶装置
US5508543A (en) *	1994-04-29	1996-04-16	International Business Machines Corporation	Low voltage memory
DE19726085A1 (de) *	1997-06-19	1998-12-24	Siemens Ag	Nichtflüchtige Speicherzelle
US7402850B2 (en)	2005-06-21	2008-07-22	Micron Technology, Inc.	Back-side trapped non-volatile memory device
US7829938B2 (en) *	2005-07-14	2010-11-09	Micron Technology, Inc.	High density NAND non-volatile memory device
KR102767720B1 (ko) *	2016-12-01	2025-02-17	솔브레인 주식회사	화학적 기계적 연마를 위한 통합형 슬러리 조성물 및 이를 이용한 연마 방법

Citations (3)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS4922356A (de) *	1972-06-23	1974-02-27
JPS5036955A (de) *	1973-08-09	1975-04-07
JPS5120872A (en) *	1974-08-13	1976-02-19	Tokyo Gas Co Ltd	Ichodenaiondobunpu nyoru gosa o hoshosuru henisokuteiho

1970
- 1970-10-27 JP JP45094482A patent/JPS5036955B1/ja active Pending
1971
- 1971-03-30 JP JP1895971A patent/JPS5641182B1/ja active Pending
- 1971-10-20 DE DE2152225A patent/DE2152225C3/de not_active Expired
1972
- 1972-03-24 DE DE19722214305 patent/DE2214305A1/de active Pending

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS4922356A (de) *	1972-06-23	1974-02-27
JPS5036955A (de) *	1973-08-09	1975-04-07
JPS5120872A (en) *	1974-08-13	1976-02-19	Tokyo Gas Co Ltd	Ichodenaiondobunpu nyoru gosa o hoshosuru henisokuteiho

Also Published As

Publication number	Publication date
DE2152225A1 (de)	1972-05-10
DE2214305A1 (de)	1972-10-05
DE2152225C3 (de)	1979-07-19
DE2152225B2 (de)	1978-11-09
JPS5036955B1 (de)	1975-11-28

Publication	Publication Date	Title
FR2112241A1 (de)	1972-06-16
AR204384A1 (de)	1976-02-06
ATA96471A (de)	1973-02-15
AU1146470A (de)	1971-08-19
AU1473870A (de)	1971-11-11
AU2044470A (de)	1972-03-30
AU1326870A (de)	1971-10-28
AU2130570A (de)	1972-04-27
AU2017870A (de)	1972-03-23
AU1833270A (de)	1972-02-10
AU1716970A (de)	1972-01-06
AU1336970A (de)	1971-10-07
AU1517670A (de)	1971-11-18
AU2085370A (de)	1972-04-13
AU1591370A (de)	1971-12-09
AU1841070A (de)	1972-02-10
AU1328670A (de)	1971-10-07
AU1343870A (de)	1971-10-07
AU1277070A (de)	1971-09-23
AU2144270A (de)	1972-04-27
AU2131570A (de)	1972-04-27
AU2130770A (de)	1972-04-27
AU1247570A (de)	1971-09-16
AU1581370A (de)	1971-12-09
AU1235770A (de)	1971-09-16