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JPS5726469A - Semiconductor memory device - Google Patents

Semiconductor memory device

Info

Publication number
JPS5726469A
JPS5726469A JP2350780A JP2350780A JPS5726469A JP S5726469 A JPS5726469 A JP S5726469A JP 2350780 A JP2350780 A JP 2350780A JP 2350780 A JP2350780 A JP 2350780A JP S5726469 A JPS5726469 A JP S5726469A
Authority
JP
Japan
Prior art keywords
drain
source
film
electrode
memory device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2350780A
Other languages
Japanese (ja)
Inventor
Shunpei Yamazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TDK Corp
Original Assignee
TDK Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by TDK Corp filed Critical TDK Corp
Priority to JP2350780A priority Critical patent/JPS5726469A/en
Publication of JPS5726469A publication Critical patent/JPS5726469A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors

Landscapes

  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)

Abstract

PURPOSE:To enable the reduction of a memory device and the high speed reading of the memory by providing source and drain unitarily determined by gate and field insulator in a self-aligning manner. CONSTITUTION:Upside and downside insulating films 2 and 4 are formed in a lump cluster or in a structure disposed at both sides of a thin film 3, and a gate electrode 1 is provided at the film 2. Source 9 and drain 11 are provided partly at a semiconductor substrate 5, and are respectively formed over a field insulating film 12 buried in the substrate 5 with source electrode, lead 8, drain electrode, lead 10. At the film 12 are contacted a source 9 and drain 11 partly at the side faces, and the source 9 and the drain 11 unitarily determined by the electrode 1 and the film 12 are formed in a self-aligning manner. Thus, the memory device can be reduced, and high speed reading of the memory can be performed.
JP2350780A 1980-02-27 1980-02-27 Semiconductor memory device Pending JPS5726469A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2350780A JPS5726469A (en) 1980-02-27 1980-02-27 Semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2350780A JPS5726469A (en) 1980-02-27 1980-02-27 Semiconductor memory device

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP1895971A Division JPS5641182B1 (en) 1970-10-27 1971-03-30

Publications (1)

Publication Number Publication Date
JPS5726469A true JPS5726469A (en) 1982-02-12

Family

ID=12112369

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2350780A Pending JPS5726469A (en) 1980-02-27 1980-02-27 Semiconductor memory device

Country Status (1)

Country Link
JP (1) JPS5726469A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1999038213A1 (en) * 1998-01-26 1999-07-29 Sony Corporation Memory device and method of manufacturing the same, and integrated circuit and method of manufacturing semiconductor device

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1999038213A1 (en) * 1998-01-26 1999-07-29 Sony Corporation Memory device and method of manufacturing the same, and integrated circuit and method of manufacturing semiconductor device
JPH11274420A (en) * 1998-01-26 1999-10-08 Sony Corp Memory element and manufacturing method thereof, and integrated circuit and semiconductor device manufacturing method
EP0971416A1 (en) * 1998-01-26 2000-01-12 Sony Corporation Memory device and method of manufacturing the same, and integrated circuit and method of manufacturing semiconductor device
EP0971416A4 (en) * 1998-01-26 2000-08-09 Sony Corp MEMORY DEVICE AND CORRESPONDING MANUFACTURING METHOD, AND INTEGRATED CIRCUIT AND CORRESPONDING MANUFACTURING METHOD
US6285055B1 (en) 1998-01-26 2001-09-04 Sony Corporation Memory device and method of manufacturing the same, and integrated circuit and method of manufacturing semiconductor device
KR100638772B1 (en) * 1998-01-26 2006-10-27 소니 가부시끼 가이샤 Memory elements and manufacturing methods thereof, and methods for manufacturing integrated circuits and semiconductor devices

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