JPS5619624A - Detection of etching end point in plasma processor - Google Patents
Detection of etching end point in plasma processorInfo
- Publication number
- JPS5619624A JPS5619624A JP9499879A JP9499879A JPS5619624A JP S5619624 A JPS5619624 A JP S5619624A JP 9499879 A JP9499879 A JP 9499879A JP 9499879 A JP9499879 A JP 9499879A JP S5619624 A JPS5619624 A JP S5619624A
- Authority
- JP
- Japan
- Prior art keywords
- high frequency
- etching
- point
- plasma processor
- monitored
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H10P50/00—
Landscapes
- Drying Of Semiconductors (AREA)
Abstract
PURPOSE:To accurately detect the etching end point in the plasma processor by applying constant current or voltage between electrodes and utilizing the lowest point of high frequency output or the highest point of the high frequency current. CONSTITUTION:A pair of parallel flat plate electrodes 1 are contained in a processing chamber 2, high frequency current is applied from a high frequency constant current source 3, is monitored by a power meter 4, and is recorded by a recorder 5. Discharge executes constant voltage effect, but when the etching approaches its end, the base produced upon reaction of the etching gas with article to be etched is reduced. When the atmosphere in the chamber 2 is altered, potential is lowered to present the lowest point P to stop the etching at this point. In this configuration, the processing chamber may not be revised out only predetermined electric circuit may be connected thereto. Since only high frequency output is monitored, it can accurately detect it.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9499879A JPS5619624A (en) | 1979-07-27 | 1979-07-27 | Detection of etching end point in plasma processor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9499879A JPS5619624A (en) | 1979-07-27 | 1979-07-27 | Detection of etching end point in plasma processor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5619624A true JPS5619624A (en) | 1981-02-24 |
Family
ID=14125516
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9499879A Pending JPS5619624A (en) | 1979-07-27 | 1979-07-27 | Detection of etching end point in plasma processor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5619624A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5879722A (en) * | 1981-11-06 | 1983-05-13 | Fujitsu Ltd | Controlling method of plasma etching |
| JPS61256637A (en) * | 1985-05-06 | 1986-11-14 | インターナショナル・ビジネス・マシーンズ・コーポレーション | Monitoring of plasma etching process |
| US5016663A (en) * | 1987-03-31 | 1991-05-21 | Kabushiki Kaisha Toshiba | Method of determining end of cleaning of semiconductor manufacturing apparatus |
| US5169407A (en) * | 1987-03-31 | 1992-12-08 | Kabushiki Kaisha Toshiba | Method of determining end of cleaning of semiconductor manufacturing apparatus |
| WO2018155425A1 (en) * | 2017-02-21 | 2018-08-30 | 株式会社アルバック | Method for manufacturing element structure |
-
1979
- 1979-07-27 JP JP9499879A patent/JPS5619624A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5879722A (en) * | 1981-11-06 | 1983-05-13 | Fujitsu Ltd | Controlling method of plasma etching |
| JPS61256637A (en) * | 1985-05-06 | 1986-11-14 | インターナショナル・ビジネス・マシーンズ・コーポレーション | Monitoring of plasma etching process |
| US5016663A (en) * | 1987-03-31 | 1991-05-21 | Kabushiki Kaisha Toshiba | Method of determining end of cleaning of semiconductor manufacturing apparatus |
| US5169407A (en) * | 1987-03-31 | 1992-12-08 | Kabushiki Kaisha Toshiba | Method of determining end of cleaning of semiconductor manufacturing apparatus |
| WO2018155425A1 (en) * | 2017-02-21 | 2018-08-30 | 株式会社アルバック | Method for manufacturing element structure |
| CN109892012A (en) * | 2017-02-21 | 2019-06-14 | 株式会社爱发科 | The manufacturing method of element structure |
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