CN109892012A - The manufacturing method of element structure - Google Patents
The manufacturing method of element structure Download PDFInfo
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- CN109892012A CN109892012A CN201880003963.3A CN201880003963A CN109892012A CN 109892012 A CN109892012 A CN 109892012A CN 201880003963 A CN201880003963 A CN 201880003963A CN 109892012 A CN109892012 A CN 109892012A
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- inorganic material
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- resin material
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 59
- 239000000758 substrate Substances 0.000 claims abstract description 137
- 239000011347 resin Substances 0.000 claims abstract description 131
- 229920005989 resin Polymers 0.000 claims abstract description 131
- 239000000463 material Substances 0.000 claims abstract description 98
- 238000005530 etching Methods 0.000 claims abstract description 36
- 238000001514 detection method Methods 0.000 claims abstract description 8
- 230000008859 change Effects 0.000 claims abstract description 6
- 229910010272 inorganic material Inorganic materials 0.000 claims description 111
- 239000011147 inorganic material Substances 0.000 claims description 111
- 239000000126 substance Substances 0.000 claims 1
- 239000011368 organic material Substances 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 234
- 239000010408 film Substances 0.000 description 149
- 239000002023 wood Substances 0.000 description 75
- 238000000034 method Methods 0.000 description 67
- 230000008569 process Effects 0.000 description 49
- 239000002346 layers by function Substances 0.000 description 22
- 230000004888 barrier function Effects 0.000 description 17
- 239000007789 gas Substances 0.000 description 16
- 238000002309 gasification Methods 0.000 description 15
- 230000015572 biosynthetic process Effects 0.000 description 14
- 239000012528 membrane Substances 0.000 description 14
- 238000005229 chemical vapour deposition Methods 0.000 description 11
- 239000007788 liquid Substances 0.000 description 11
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 10
- 229910052760 oxygen Inorganic materials 0.000 description 10
- 239000001301 oxygen Substances 0.000 description 10
- 229910052581 Si3N4 Inorganic materials 0.000 description 7
- 238000000231 atomic layer deposition Methods 0.000 description 7
- 238000001816 cooling Methods 0.000 description 7
- 239000002245 particle Substances 0.000 description 7
- QQONPFPTGQHPMA-UHFFFAOYSA-N propylene Natural products CC=C QQONPFPTGQHPMA-UHFFFAOYSA-N 0.000 description 7
- 125000004805 propylene group Chemical group [H]C([H])([H])C([H])([*:1])C([H])([H])[*:2] 0.000 description 7
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 7
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 6
- 230000007423 decrease Effects 0.000 description 6
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 6
- 238000004544 sputter deposition Methods 0.000 description 6
- 229910004205 SiNX Inorganic materials 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- 239000011241 protective layer Substances 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- 230000032258 transport Effects 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 125000003903 2-propenyl group Chemical group [H]C([*])([H])C([H])=C([H])[H] 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 3
- 238000005086 pumping Methods 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000003851 corona treatment Methods 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 238000009499 grossing Methods 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- -1 silicon-oxygen nitride Chemical class 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- UMVBXBACMIOFDO-UHFFFAOYSA-N [N].[Si] Chemical compound [N].[Si] UMVBXBACMIOFDO-UHFFFAOYSA-N 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000013039 cover film Substances 0.000 description 1
- 210000002858 crystal cell Anatomy 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000008676 import Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 239000005416 organic matter Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000001878 scanning electron micrograph Methods 0.000 description 1
- 150000003377 silicon compounds Chemical class 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000009281 ultraviolet germicidal irradiation Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/02—Details
- H05B33/04—Sealing arrangements, e.g. against humidity
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Plasma & Fusion (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Inorganic Chemistry (AREA)
- Electroluminescent Light Sources (AREA)
- Drying Of Semiconductors (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
本发明的元件结构体的制造方法包括：树脂材形成工序，在具有凹凸的基板上，以至少凸部的周边比平坦部更厚的方式形成由有机物构成的树脂材；和树脂材蚀刻工序，残留位于所述凸部的周边的一部分所述树脂材，并且去除所述平坦部的该树脂材。在所述树脂材蚀刻工序中，检测对所述树脂材进行蚀刻处理的条件中的特定条件的变化，并且将检测出的检测结果用作该蚀刻处理的终点。
The method for producing an element structure of the present invention includes: a resin material forming step of forming a resin material made of an organic material on a substrate having unevenness so that at least the periphery of the convex portion is thicker than the flat portion; and a resin material etching step, A part of the resin material at the periphery of the convex portion remains, and the resin material in the flat portion is removed. In the resin material etching step, a change in a specific condition among the conditions for performing the etching treatment on the resin material is detected, and the detected detection result is used as the end point of the etching treatment.
Description
Technical field
The present invention relates to a kind of manufacturing methods of element structure, more particularly to a kind of element structure and use element
The proper technology of the manufacturing method of structural body, the element structure have the stacking that device etc. is protected from oxygen or moisture etc.
Structure.
This application claims based on 2 21st, 2017 patent application 2017-030316 priority in Japanese publication,
And here cite its content.
Background technique
As the element comprising having the compound for the property encroached on and be deteriorated vulnerable to moisture or oxygen etc., such as it has been known that there is
Organic EL (Electro Luminescence, electroluminescent) element etc..About this element, attempt that packet has been laminated by being formed
Layer containing compound and stepped construction made of the protective layer of this layer is covered to inhibit moisture etc. to invade into element.For example,
Light-emitting component is described in following patent documents 1, which has in top electrode layer by inoranic membrane and organic film
The protective film that stacked film is constituted.
Patent document 1: Japanese Patent Publication 2013-73880 bulletin
However, have the coverage property (step (segment difference) covering property) of the inoranic membrane of barrier property relatively low vapor etc.,
If there are bumps on the substrate surface with device layer, inoranic membrane is unable to fully cover the bumps.For example, it is possible to send out
The covering that the raw concave-convex boundary portion formed on the surface of the substrate is not covered by inoranic membrane is bad.In case of this inoranic membrane
Cover bad, then since moisture can not be prevented to invade from occurring to cover undesirable position, therefore, it is difficult to ensure sufficient barrier property.
Summary of the invention
The present invention is to propose in view of the foregoing, it is desirable to realize at least one following purpose.
1, the decline of the barrier properties in thin-film package is prevented.
2, protective film can effectively be improved to the barrier property of vapor etc..
3, the manufacturing method of a kind of element structure that can be improved to the barrier property of vapor and element structure is provided.
The manufacturing method of element structure involved in a mode of the invention solves the above problem in the following manner:
That is, the manufacturing method of the element structure includes: resinous wood formation process, on having indent and convex substrate, at least protrusion
The periphery mode thicker than flat part forms the resinous wood being made of organic matter；With resinous wood etching work procedure, residual is located at described
A part of resinous wood on the periphery of protrusion, and the resinous wood of the flat part is removed, work is etched in the resinous wood
In sequence, the variation of the specified conditions in the condition being etched to the resinous wood, and the detection that will test out are detected
As a result it is used as the terminal of the etching process.
In a mode of the invention, the variation of the more preferable specified conditions is the bias voltage for being applied to the substrate
Variation.
A mode of the invention can further comprise: inoranic membrane formation process, after the resinous wood etching work procedure,
Remain the inorganic material layer that formation is made of inorganic material on the substrate of the resinous wood.
The manufacturing method of element structure involved in a mode according to the present invention can accurately carry out resinous wood
Removal, thus without to underlying band come unwanted damage, can be easy by remove resinous wood unnecessary portion only
Make necessary part that (office is changing) be locally present.
In a mode of the invention, since the variation of the specified conditions is the bias voltage for being applied to the substrate
Variation, therefore can accurately judge to remove the unnecessary part of the resinous wood on substrate, and terminate etching process, it can be accurate
The resinous wood of ground removal flat part.Therefore, the time needed for can be shortened film formation process, and stablize membrane property, prevent film special
The variation of property.
Since a mode of the invention further comprises inoranic membrane formation process, institute after the resinous wood etching work procedure
It states inoranic membrane formation process and forms the inorganic material layer being made of inorganic material on the substrate for remain the resinous wood,
Therefore unwanted damage will not be brought to substrate protrusion, remove the unnecessary portion of resinous wood and only make necessary part office
Portion exist after, can inorganic material easy to use be packaged.
A mode according to the present invention plays the effect that can improve the barrier property to vapor etc. in element structure.
A mode according to the present invention can be etched in the suitable situation of resin film.Due to can only in necessity
Part cull material, therefore improve the leakproofness of inoranic membrane being formed on remaining resinous wood.
Detailed description of the invention
Fig. 1 is the manufacture dress for indicating to carry out the manufacturing method of element structure involved in first embodiment of the invention
The generalized schematic set.
Fig. 2 is the manufacture dress for indicating to carry out the manufacturing method of element structure involved in first embodiment of the invention
The schematic cross section in the resin film forming portion set.
Fig. 3 is the manufacture dress for indicating to carry out the manufacturing method of element structure involved in first embodiment of the invention
That sets is locally present the schematic cross section of processing unit.
Fig. 4 is the schematic sectional view for indicating element structure involved in first embodiment of the invention.
Fig. 5 is the top view for indicating element structure involved in first embodiment of the invention.
Fig. 6 is the enlarged cross-sectional view of the major part of said elements structural body.
Fig. 7 is the work of the process in the manufacturing method for indicate element structure involved in first embodiment of the invention
Sequence figure.
Fig. 8 is the work of the process in the manufacturing method for indicate element structure involved in first embodiment of the invention
Sequence figure.
Fig. 9 is the work of the process in the manufacturing method for indicate element structure involved in first embodiment of the invention
Sequence figure.
Figure 10 is the process in the manufacturing method for indicate element structure involved in first embodiment of the invention
Process chart.
Figure 11 is the process in the manufacturing method for indicate element structure involved in first embodiment of the invention
Process chart.
Figure 12 is the manufacturing method of element structure involved in the first embodiment that indicates through the invention to manufacture
Element structure structure variation schematic sectional view.
Figure 13 is the manufacturing method of element structure involved in the first embodiment that indicates through the invention to manufacture
Element structure structure variation schematic sectional view.
Figure 14 is the manufacturing method of element structure involved in the first embodiment that indicates through the invention to manufacture
Element structure structure variation schematic sectional view.
Figure 15 is at the etching in the manufacturing method for indicate element structure involved in first embodiment of the invention
The chart of bias voltage under reason.
Specific embodiment
In the following, being said based on manufacturing device of the attached drawing to element structure involved in first embodiment of the invention
It is bright.
Fig. 1 is the outline signal of the manufacturing device in the manufacturing method for indicate element structure involved in present embodiment
Figure.Fig. 2 is the generalized schematic for indicating resin film forming portion involved in present embodiment.Fig. 3 is indicated involved by present embodiment
And element structure manufacturing device the generalized schematic that processing unit is locally present, in Fig. 1, appended drawing reference 1000 be member
The manufacturing device of part structural body.
As be described hereinafter, the manufacturing device 1000 of element structure involved in present embodiment carries out the elements such as organic EL element
The manufacture of structural body.As shown in Figure 1, manufacturing device 1000 has first layer forming portion 201, resin film forming portion 100, is locally present
Processing unit 202, second layer forming portion 203 form the functional layer forming portion 204 of functional layer as organic EL layer, 200 and of core room
It is connected to external load lock chamber 210.Core room 200 is linked to first layer forming portion 201, resin film forming portion 100, locally deposits
In processing unit 202, second layer forming portion 203, functional layer forming portion 204 and load lock chamber 210.
It is inserted into from the manufacturing device 1000 that other devices etc. are transported to element structure in the inside of load lock chamber 210
Substrate.Substrate carrier robot for example (not shown) is configured in core room 200.Thereby, it is possible in core room 200 and each first
Layer forming portion 201, resin film forming portion 100, be locally present processing unit 202, second layer forming portion 203, functional layer forming portion 204 and
Substrate is transported between load lock chamber 210.It can be via the load lock chamber 210 to the manufacturing device 1000 of element structure
Transport substrate in outside.Core room 200, each film forming room 100,201,202,203,204 and load lock chamber 210 are respectively constituted and are connected with
The vacuum chamber of vacuum pumping system (not shown).
The system of element structure 10 is carried out by using the manufacturing device 1000 of the element structure with above structure
It makes, so as to the automation of Shi Ge manufacturing process, and can efficiently be manufactured using multiple film forming room simultaneously, thus
Productivity can be improved.
First layer forming portion 201 forms the first layer 41 in aftermentioned element structure 10, and the first layer 41 covering is arranged
Functional layer 3 on a surface side 2a of substrate 2, and locally there is protrusion, and by silicon nitride (SiNx) etc. inorganic material structure
At.First layer forming portion 201 be for example, by CVD (Chemical Vapor Deposition, chemical vapor deposition) method or
ALD (Atomic layer deposition, atomic layer deposition) method etc. forms the film forming room of first layer 41.
Functional layer forming portion 204 forms the functional layer 3 in aftermentioned element structure 10.In addition, functional layer forming portion 204
The outside of load lock chamber 210 can also be set to.
Second layer forming portion 203 is in a manner of covering the first layer 41 and resinous wood 51 in aftermentioned element structure 10
The film forming room of the second layer 42 is formed, the second layer 42 is equally made of inorganic material with first layer 41.In addition, in the second layer 42
In the case where being made of with first layer 41 identical material, second layer forming portion 203 and first layer forming portion 201 are set as identical
Structure, or the second layer 42 and first layer 41 can also be formed using a film forming room (common film forming room).
In addition, any one forming portion or common film forming in second layer forming portion 203 and first layer forming portion 201
In the case that room is made of plasma CVD equipment, the forming portion 201,203 or film forming room not only have above-mentioned function, but also
Also have both the aftermentioned function that processing unit 202 is locally present.For example, being formed with tree by being transported into plasma CVD equipment
The substrate of adipose membrane, and oxidizing gas is imported plasma occurs, so as to etch resin film and keep resin film local
In the presence of to form resinous wood.Later, the second layer 42 can also be formed directly in plasma CVD equipment.
Resin film forming portion 100 is following film forming room: that is, the film forming room, which passes through, is supplied to tree for the resin material through gasifying
The inside in rouge film forming portion 100 forms the resin material film 5a being made of resin material on first layer 41, and makes resin material
Film 5a is hardened and is formed resin film 5.
As shown in Fig. 2, resin film forming portion 100 has the chamber 110 for the pressure that can reduce inner space and for will be through
The resin material of gasification is supplied to the gasifier 300 in chamber 110.
As be described hereinafter, the inner space of chamber 110 is made of upper space 107 and lower space 108.
It is connected in chamber 110 vacuum pumping hardware (not shown) (vacuum exhaust mechanism or vacuum pump etc.), vacuum row
Device of air is configured to the gas of discharge inner space, so that making the inner space of chamber 110 becomes vacuum atmosphere.
Shower plate (シ ャ ワ ー プ レ ー ト) 105 is equipped in the inner space of chamber 110, in 110 internal ratio cluster of chamber
The space for penetrating 105 upper side of plate constitutes upper space 107.The portion that can pass through by ultraviolet light is provided in the topmost of chamber 110
The top plate 120 that part is constituted, is equipped with the irradiation unit 122 (irradiation means or UV lamp etc.) of ultraviolet light in the upside of top plate 120.
Here, since shower plate 105 is also formed by the component that ultraviolet light can pass through, from irradiation unit 122 to top
The ultraviolet light that space 107 imports further passes through shower plate 105, and can advance under the downside positioned at shower plate 105
In portion space 108.Thereby, it is possible to after film forming to the propylene material film 5a (resin material film) being formed on aftermentioned substrate S
Irradiating ultraviolet light, and propylene material film is made to harden and form allyl resin film 5 (resin film).
It is located in the lower space 108 than 105 lower side of shower plate in chamber 110 and is equipped with (the substrate guarantor of objective table 102
Hold portion), which is used to load the substrate S of propylene film to be formed.
Heating device (not shown) is equipped in chamber 110.In order to make to constitute upper space 107 and lower space 108
Chamber 110 inside face temperature be resin material gasification temperature more than, preferably 40~250 DEG C or so, using plus
Thermal is controlled.The temperature of the substrate S of resin material film to be formed passes through the objective table 102 for being built in mounting substrate S
Cooling device 102a in (board holder) is controlled, and is controlled as the gasification temperature of resin material hereinafter, excellent
Zero degree (0 DEG C) is selected as hereinafter, such as -30~0 DEG C or so.
The upper space 107 of chamber 110 is connected to via pipeline 112 and valve 112V with gasifier 300.Gasifier 300 as a result,
Can upper space 107 to chamber 110 supply the resin material through gasifying.Gasifier 300 has gasification slot 130, spitting unit
132 and resin material material container 150.The raw material of resin material is fed into gasification slot 130 via pipeline 140 and valve 140V
In.Gasifier 300 is given birth to and spraying resin material towards the inner space of gasification slot 130 from spitting unit 132 and being heated
At the resin material through gasifying.
In the resin film forming portion 100 with above structure, the resin material that is gasified by gasification slot 130 is from gasification slot 130
It imported into the upper space 107 of chamber 110.In addition, the resin material through gasifying is via being set to the multiple micro- of shower plate 105
Pore (not shown) advances to lower space 108 from upper space 107, and the film forming face for reaching substrate S (is upper table in Fig. 2
Face).
Due to being configured with exposure mask (not shown) in the film forming face of substrate S, the resin material through gasifying is via setting
It is attached on substrate S in the opening portion (not shown) of exposure mask.At this point, the manufacturing device involved in embodiments of the present invention
In, since the cooling device 102a in the objective table 102 by being built in mounting substrate S is setting the temperature control of substrate S
Therefore the gasification temperature of rouge material on substrate S hereinafter, can form the excellent resin material film 5a of film quality.
Therefore, in the resin film forming portion 100 involved in present embodiment, the loading of the supporting table as mounting substrate S
Platform 102 is built-in with the cooling device 102a as temperature control equipment, and cooling device 102a is used to substrate S being maintained at zero degree
In temperature range below.
Resin film forming portion 100 for example as follows constitute: can be carried out in identical chamber 110 gasification temperature 40~
The film forming of the resin material of 250 DEG C or so of ultraviolet ray hardening type allyl resin raw material and for make film forming after resin material film
The ultraviolet light irradiation of 5a hardening.Thereby, it is possible to carry out any treatment process in identical apparatus structure, and production can be improved
Rate.
In addition, resin film forming shown in Fig. 2 portion 100 is an example of embodiments of the present invention.As long as mounting base
It is built-in with cooling device 102a in the objective table 102 of the supporting table of plate S, then can also use other structures, the cooling device
102a controls dress as the temperature that substrate S is maintained to for example sub-zero temperature range of the condensation temperature of resin material or less
It sets.
For example, as long as the resin material through gasifying can be not necessarily to towards equably traveling (can flow) in the face substrate S
Shower plate 105 is configured in the inner space of chamber 110.
After the film forming of resin material, light is carried out to resin material film irradiating ultraviolet light, and to resin material film 5a
It polymerize and is allowed to harden, after forming resin film, removes exposure mask M and keep substrate S mobile to processing unit 220 is locally present.
As the structure that processing unit 202 is locally present, the structure of dry etch process device can be used, in particular, can be used
The structure of plasma etch process device.
As shown in figure 3, the plasma processing apparatus that processing unit 202 is parallel plate-type is locally present.Specifically, office
There are processing units 202 to include chamber 222 in portion；Electrode 226 is set in chamber 222 and loads substrate S；Gas introduction tube 223,
For importing etching gas into chamber 222；High frequency electric source 224, for being supplied as the high frequency waves of the energy to etching gas；It
Line 225 is connected to the high frequency electric source 224；High frequency electric source 227 applies bias voltage for the electrode 226 into chamber 222；Pressure
Force control valve 228, for the pressure in chamber 222 to be maintained constant；With offset voltage sensors 229.
In order to carry out that processing is locally present in plasma processing apparatus 202, firstly, from gas introduction tube 223 to chamber
Etching gas is imported in room 222.By the etching gas incidence of antenna 225 into chamber 222 by the high-frequency electrical as the energy
The high frequency waves that source 224 generates.The illuminated high frequency waves of above-mentioned etching gas simultaneously generate plasma.From high frequency electric source 227 to chamber
Electrode 226 in room 222 applies bias voltage, and is introduced into above-mentioned plasma to the substrate S being positioned on the electrode 226
In the case where existing ion, the resin film 5 on the front for being formed in substrate S is etched.
Here, pass through by oxygen etc. etching gas generate plasma in ion come to resin film 5 carry out it is each to
Anisotropic etch.
In addition, there is sputtering equipment or plasma CVD in above-mentioned first layer forming portion 201 or second layer forming portion 203
In the case where device, which not only has film forming function, but also has both the function that processing unit 202 is locally present.
In this case, for example, first layer forming portion 201, second layer forming portion 203 and be locally present processing unit 202 can be used it is identical
Processing unit.
Come in processing unit 202 is locally present, such as by using the plasma etching of the oxygen as etching gas
Remove the most of resin film 5 being formed on substrate S.About the corona treatment, can by film thickness by resin film 5 and
Etch-rate calculates the processing time of the unnecessary part of the resin film 5 on removal substrate S, to be provided according to the time
The processing time.
In addition, being locally present in processing unit 202 in present embodiment, offset voltage sensors 229 are following detection
Device: that is, the offset voltage sensors 229 measurement is applied to the bias voltage Vpp of electrode 226 from high frequency electric source 227, according to survey
The variation of magnitude is come the unnecessary part for the resin film 5 being judged as on removal substrate S, and by the judging result (testing result)
Terminal as etching process.
For being locally present for processing unit 202 for present embodiment, as shown in figure 15, by inclined in processing is locally present
Set voltage sensor 229 measurement bias voltage Vpp after processing starts soon, with processing the time process and rise.
In addition, the bias voltage Vpp of the unnecessary part of the organic film 5 on the removal substrate S that will be calculated by etch-rate is set as
When 100%, as shown in figure 15,97% or so, bias voltage Vpp is temporarily specified value.In turn, when etched, it biases
Voltage Vpp rises, and then becomes constant.
This is regarded as, when removing the unnecessary part of the organic film 5 on substrate S by corona treatment,
Bias voltage Vpp is dramatically changed.That is, the presence or absence of resin film state becomes before and after at the time of bias voltage Vpp is dramatically changed
Change.That is, removing the time of resin film 5 in the large area part of the flat of resin film 5 etc., and terminate the flat of large area
The time not almost being etched after partial removal by being locally present for resinous wood, bias voltage Vpp change.This can
Think during largely etch, due to a large amount of gases etc. comprising being generated by etching in the plasma, because these from
Daughter density is higher and bias voltage is difficult to rise.
The present inventor confirms the bias voltage in plasma etching by SEM image to verify above-mentioned phenomenon
Whether there is or not resin film 5 (propylene films) for front and back at the time of Vpp is dramatically changed.It is dramatically changed as a result, confirming in bias voltage Vpp
At the time of before, resin film 5 (propylene film) is present in the flat surface portion of substrate S.In addition, bias voltage Vpp substantially
After at the time of variation, in addition to rear remaining part is locally present, resin is not present in the positive almost major part of substrate S
Film 5 (propylene film).According to this as a result, changing by the increase of bias voltage Vpp value in a short time, it can be judged as removal base
The unnecessary part of resin film 5 on plate S and the terminal for becoming etching process.That is, can by bias voltage Vpp it is temporarily constant it
The position that rises afterwards or the terminal that etching process is set as in certain time later.
In the following, the element structure 10 manufactured to the manufacturing device 1000 of the element structure as involved in present embodiment
It is illustrated.
Fig. 4 is the schematic sectional view for indicating element structure involved in present embodiment.Fig. 5 is the element for indicating Fig. 4
The top view of structural body.Fig. 6 is the enlarged drawing for indicating the major part of element structure.In the various figures, X-axis, Y-axis and Z axis side
To three orthogonal axis directions are indicated, in the present embodiment, X-axis and Y direction indicate orthogonal horizontal direction, Z
Axis direction indicates vertical direction.
Element structure 10 involved in present embodiment has: substrate 2, including device layer 3 (functional layer)；First is inorganic
Material layer 41 (first layer), for covering the functional layer 3 on the positive 2a for being formed in substrate 2, and have local protrusions and by
Silicon nitride (SiNx) etc. inorganic material constitute；With the second inorganic material layer 42 (second layer), it is used to cover the first inorganic material
Layer 41, and with first layer 41 equally with local protrusions and by silicon nitride (SiNx) etc. inorganic material constitute.This embodiment party
The element structure 10 of formula is made of the light-emitting component with organic EL luminescent layer.
Substrate 2 has front 2a (the first face) and back side 2c (the second face), such as by structures such as glass substrate or plastic bases
At.The shape of substrate 2 is not particularly limited, and is formed in the present embodiment rectangular-shaped.The size of substrate 2 or thickness etc. are no
It is particularly limited, the substrate with size appropriate and thickness can be used according to the size of component size.In present embodiment
In, multiple element structural body 10 is made by the aggregate of the identity element made on a large substrate S.
Device layer 3 (functional layer) is by including that organic EL luminescent layer of upper electrode and lower electrode is constituted.Except this structure
In addition, device layer 3 can also by electric layer in the liquid crystal layer or generating element in such as liquid crystal cell etc., comprising vulnerable to moisture
Or the various function element of the material of the property of the infringements such as oxygen are constituted.
Device layer 3 is formed in the predetermined region of the positive 2a of substrate 2.The flat shape of device layer 3 is not particularly limited,
It is formed substantially rectangular shape in the present embodiment, but in addition to this shape, it can also be using round or wire shaped etc.
Shape.Device layer 3 is not limited to configure the example on the positive 2a of substrate 2, can also configure positive 2a and back in substrate 2
On at least one face in the 2c of face.
On the positive 2a for the substrate 2 that configuration device layer 3 is arranged in first inorganic material layer 41 (first layer), and constitutes and cover
The protrusion of the positive 3a and side 3s of lid device layer 3.First inorganic material layer 41 has in from the positive 2a of substrate 2 towards Fig. 6
Top stereochemical structure outstanding.
First inorganic material layer 41 from moisture or oxygen by that can protect the inorganic material of device layer 3 to constitute.In this reality
It applies in mode, the first inorganic material layer 41 silicon nitride (SiN excellent by water vapor barrier propertyx) constitute, but do not limit
In the material.There can also be vapor by other silicon compounds of Si oxide or silicon-oxygen nitride etc. or aluminium oxide etc.
Other inorganic material of barrier property constitute the first inorganic material layer 41.
For example, first inorganic material layer 41 is formed a film on the positive 2a of substrate 2 using exposure mask appropriate.In this implementation
In mode, the first inorganic material layer 41 is formed using the exposure mask in the rectangular aperture portion with the size for capableing of containment device layer 3.
Film build method is not particularly limited, and can apply CVD (Chemical Vapor Deposition) method or ALD (Atomic layer
Deposition) method etc..The thickness of first inorganic material layer 41 is not particularly limited, for example, 200nm~20 μm.
Second inorganic material layer 42 (second layer) is with the first inorganic material layer 41 equally by that can protect from moisture or oxygen
The inorganic material for protecting device layer 3 is constituted, and is set in a manner of positive 41a and side 41s to cover the first inorganic material layer 41
It is placed on the positive 2a of substrate 2.In the present embodiment, the second inorganic material layer 42 silicon nitrogen excellent by water vapor barrier property
Compound (SiNx) constitute, but it is not limited to the material.It can also be closed by other silication of Si oxide or silicon-oxygen nitride etc.
Other inorganic material with water vapor barrier property of object or aluminium oxide etc. constitute the second inorganic material layer 42.
For example, second inorganic material layer 42 is formed a film on the positive 2a of substrate 2 using exposure mask appropriate.In this implementation
In mode, formed a film using the exposure mask in the rectangular aperture portion with the size that can accommodate the first inorganic material layer 41 second inorganic
Material layer 42.Film build method is not particularly limited, can using CVD (Chemical Vapor Deposition) method or sputtering method,
ALD (Atomic layer deposition) method etc..The thickness of second inorganic material layer 42 is not particularly limited, for example,
200nm~20 μm.
Element structure 10 involved in present embodiment further has the first resinous wood 51.First resinous wood 51 is uneven
It is even to there is (tending to) around the first inorganic material layer 41 (protrusion).In the present embodiment, the first resinous wood 51 is present in
Between first inorganic material layer 41 and the second inorganic material layer 42, and unevenly it is present in the side of the first inorganic material layer 41
Boundary portion 2b between 41s and the positive 2a of substrate 2.First resinous wood 51 has the function of as follows: that is, filling is formed in boundary
The first inorganic material layer 41 near portion 2b and the clearance G (Fig. 6) between substrate front side 2a.
Fig. 6 amplification indicates the peripheral structure of the boundary portion 2b in element structure 10.Due to the first inorganic material layer 41 by
The cvd film or sputtered film of inorganic material are formed, therefore to the covering in the concaveconvex structure face of the substrate 2 including device layer 3 spy
Property is relatively low.As a result, as shown in fig. 6, the first inorganic material layer 41 of the side 3s of covering device layer 3 substrate positive 2a
Neighbouring its coverage property decline, it is possible in covering film thickness is minimum or state there is no cover film.
Therefore, in the present embodiment, inorganic by making the first resinous wood 51 unevenly be present in as described above first
The covering defective region on 41 periphery of material layer, thus inhibit moisture or oxygen from the covering defective region to device layer 3 inside invade
Enter.In addition, when forming the second inorganic material layer 42, by making the first resinous wood 51 as the substrate of the second inorganic material layer 42
Layer functions, to can be carried out the appropriate film forming of the second inorganic material layer 42, and can suitably be covered with desired film thickness
The side 41s of first inorganic material layer 41.
For the forming method of the first resinous wood 51, the resin material to gasify through spraying gasification is fed into substrate
Positive 2a and condense and form resin material film 5a, harden resin material film 5a and after forming resin film 5, by going
Process be locally present form first resinous wood 51 except unnecessary portion.
In the following, the system for the element structure realized to the manufacturing device using element structure involved in present embodiment
The method of making is illustrated.
Fig. 7~Figure 11 is first schematically shown in the manufacturing method of element structure involved in present embodiment
The process chart of the forming method of resinous wood 51.
(the formation process example of device layer)
Firstly, utilizing substrate carrier robot (not shown) in the manufacturing device 1000 of element structure shown in Fig. 1
The substrate S that core room 200 is transported into from load lock chamber 210 is transported from core room 200 to functional layer forming portion 204.In the functional layer
In forming portion 204, the predetermined region on substrate S forms device layer 3 (functional layer).
In the present embodiment, as become functional layer 3 region, can be used substrate S on multiple positions region or
The single region as functional layer 3, the multiple position is for example may be used in X-direction and Y direction at predetermined intervals
Arrangement respectively there are two position four positions region.
The forming method of device layer 3 is not particularly limited, and can suitably be selected according to the material of device layer 3 or structure etc..
For example, by the film forming room etc. that substrate S is transported to functional layer forming portion 204, carried out on substrate S prescribed material vapor deposition or
Sputtering etc., and carry out pattern processing etc., so as to form desired device layer 3 in the predetermined region on substrate S.Pattern
Processing method is not particularly limited, such as etching can be used etc..
In addition, omitting the detailed description in Fig. 1 to the specific structure of the manufacturing device 1000 of element structure.Functional layer shape
It is made of, can be used with the transport dress that can transport substrate S between process chamber adjacent to each other multiple process chambers at portion 204
The structure set.Alternatively, antivacuum apparatus structure can also be used.That is, without via load lock chamber 210, but can be in member
The outside of the manufacturing device 1000 of part structural body handles substrate S.
(the formation process example of first layer)
Then, the base for being formed with device layer 3 is transported from functional layer forming portion 204 using substrate carrier robot (not shown)
Plate S, and first layer forming portion 201 is transported into via core room 200.
In first layer forming portion 201, in a manner of covering device layer 3, in the substrate including the region of device layer 3
Predetermined region on S forms the first inorganic material layer 41 (first layer).As a result, as shown in fig. 7, the first nothing of covering device layer 3
Machine material layer 41 is formed have protrusion on substrate S.
It in this process, can also be for example using the opening with quantity corresponding with the region of the first inorganic material layer 41
Exposure mask, by the first inorganic material layer 41 being for example made of silicon nitride as protective layer a part formed.
Here, first layer forming portion 201 can be set to the structure with CVD processing unit or sputter process device.In addition,
Although it is not shown, but may be provided with objective table for configuring substrate S in the film forming room of first layer forming portion 201, configuration exists
Exposure mask on substrate S, support exposure mask and to the substrate S on objective table carry out position alignment of exposure mask etc. mask alignment device,
Device for supplying film forming material etc..
The substrate S for being formed with device layer 3 is configured in ands configuring substrate carrier robot in core room 200 etc.
On the objective table of one layer of forming portion 201.By mask alignment device etc. and via the opening of exposure mask, the side exposed with device layer 3
Formula configures exposure mask on the specified position on substrate S.
Also, such as by CVD method, the first inorganic material being made of silicon nitride etc. is formed in a manner of covering device layer 3
The bed of material 41.In addition, the forming method of the first inorganic material layer 41 is not limited to CVD method, such as sputtering method can be used.In the situation
Under, first layer forming portion 201 is configured to sputtering equipment.
(formation process example~film formation process of resinous wood)
Then, it is transported and is formed with protrusion from first layer forming portion 201 using substrate carrier robot (not shown)
The substrate S of first inorganic material layer 41, and be transported into resin film forming portion 100 via core room 200.
Following process is carried out in resin film forming portion 100: forming resin on the substrate S for being formed with the first inorganic material layer 41
The process of material membrane 5a and the process for forming resin film 5 and hardening resin material film 5a.In this process, it uses first
Resin film forming portion 100, to form the resin material film 5a being for example made of ultraviolet ray hardening type propylene resin material.
In resin film forming portion 100, the substrate S for being transported into resin film forming portion 100 first is positioned on objective table 102.?
Before substrate S is transported into chamber 110, the gas in chamber 110 is discharged by vacuum pumping hardware, and in chamber 110
It is maintained at vacuum state.Also, when substrate S is transported into chamber 110, the vacuum state of chamber 110 is maintained.
At this point, passing through heating device, at least upper space 107 (US) and the interior table of lower space 108 in chamber 110
The temperature of surface side is set to the gasification temperature of resin material or more.Meanwhile the substrate S configured on objective table 102 passes through base
Plate cooling device 102a and objective table 102 are cooled to temperature more lower than the gasification temperature of resin material together.
In addition, being set as resin material supply pipe 112 (first pipe) being heated to resin material by heater 112d
State more than gasification temperature.
Then, for configuring in the substrate S on objective table 102, exposure mask (not shown) is loaded by exposure mask and is filled sometimes
It sets etc. and configures on the specified position on substrate S.
Then, the atmosphere in mask alignment state, chamber 110, the inner wall temperature of chamber 110 or temperature of substrate S etc.
After condition becomes specified states, the resin material to gasify in gasifier 300 is supplied in chamber 110.
The resin material through gasifying supplied by gasifier 300 is fed into down from upper space 107 via shower plate 105
In portion space 108.
In lower space 108, as shown in figure 8, being substantially evenly supplied to by shower plate 105 in the entire surface of substrate S
The resin material through gasifying condensed on the positive 2a of substrate and become liquid film 5a.For being condensed on the positive 2a of substrate
Liquid film 5a for, the film thickness of liquid film 5a on the positive 2a of substrate with salient angle (bad angle) corner, recess portion or gap
Portion etc. thickens because of surface tension.
At this point, can also only be formed in the region of the part (neighbouring position) close to protrusion 41 by exposure mask (not shown)
Liquid film 5a.Further, it is contemplated that the drop-wise and rate of film build of resin material, preferably control the resinous wood supplied from gasifier 300
The supply amount of material.Resin material made of drop-wise enters fine gap because of capillarity on the front of substrate S
In, or further it is aggregated because of the surface tension of resin material, therefore fine concave-convex smoothing on substrate S can be made
It is formed simultaneously liquid film 5a (resin material film).As a result, the film thickness of liquid film 5a on substrate front side 2a with salient angle corner,
Recess portion or clearance portion etc. thicken.In particular, the side 41s and substrate of the first inorganic material layer 41 can be filled by liquid film 5a
The fine gap on boundary portion 2b between 2 positive 2a.
In addition, although a part of resin material through gasifying is also attached on the surface of 110 inner wall of chamber etc., but through adding
It will not condense and be regasified in inner wall of heat etc..
Pass through the defined processing time, forms the resin material film 5a of the liquid of specific thickness on the front of substrate S
Later, stop supplying resin material from gasifier 300.Then, it while maintaining the vacuum atmosphere in chamber 110, is irradiated from UV
Front illuminated ultraviolet light of the device 122 to substrate S.The ultraviolet light of irradiation is passed through and is made of the ultraviolet light permeable material of quartz etc.
Top plate 120 and shower plate 105 and reach on the substrate S in chamber 110.
It is incident on the front of substrate S, and is being formed towards a part of ultraviolet light that substrate S irradiates in chamber 110
In photopolymerization reaction occurs on the liquid film 5a (resin material film) being made of resin material on the front of substrate S, thus liquid
Shape film 5a hardening.As shown in figure 9, forming resin film 5 on the front of substrate S.In the present embodiment, it is thin to form allyl resin
Film.Then, exposure mask (not shown) is by exposure mask mounting apparatus etc. from mobile to retreating position at film location on substrate S.
(the formation process example of resinous wood~process is locally present)
Then, the substrate for being formed with resin film 5 is transported from resin film forming portion 100 using substrate carrier robot (not shown)
S, and be transported into via core room 200 and processing unit 202 is locally present.
Here, processing unit 202 is locally present with structure shown in Fig. 3 as above-mentioned.Be locally present processing unit 202 into
Row plasma etch process.Here, by the ion in the plasma that is generated by etching gas such as oxygen come to resin film 5
Carry out anisotropic etching.At this point, anisotropically introducing ion towards the substrate S on electrode.Therefore, it is applied to by detection
The variation of the bias voltage Vpp of electrode is judged as and almost goes according to the variation (testing result) of the bias voltage Vpp detected
It is ended processing except the resin film 5 on substrate S, and as the terminal of etching process.
In addition, there is sputtering equipment or plasma CVD in above-mentioned first layer forming portion 201 or second layer forming portion 203
In the case where device, which not only can have film forming function, but also has both and processing unit 202 is locally present
Function.In this case, such as first layer forming portion 201, second layer forming portion 203 and it processing unit 202 is locally present can make
With identical processing unit.
As shown in figure 11,2b innings of the boundary portion between the side 41S of the first inorganic material layer 41 and the positive 2a of substrate 2
There is (locally existing) and remain in the first resinous wood 51 on substrate S because of the dry etch process in portion.In addition, the first resinous wood
51 are unevenly present on the part for the micro concavo-convex smoothing that can make 41 surface of the first inorganic material layer.
(the formation process example of the second layer)
The first resinous wood 51 is locally present from processing unit 202 is locally present transporting using substrate carrier robot (not shown)
And the substrate S formed, and second layer forming portion 203 is transported into via core room 200.
In second layer forming portion 203, in such a way that covering is formed with the first inorganic material layer 41 of the first resinous wood 51,
Predetermined region on the substrate S for including protrusion forms the second inorganic material layer 42 (second layer).
In this process, same as the first inorganic material layer 41, use the region pair having with the second inorganic material layer 42
The exposure mask of the opening for the quantity answered, to form the second inorganic material layer 42 (second layer), second inorganic material layer 42 by with
The identical material of first inorganic material layer 41 such as silicon nitride is constituted.First inorganic material layer 41 (first layer), the first tree as a result,
42 (second layer) covering device layer 3 (functional layer) of rouge material 51 and the second inorganic material layer, and can be as protection device layer 3
Protective layer functions.
Here, second layer forming portion 203 can be set to the structure with CVD processing unit or sputter process device.
Second layer forming portion 203 can have apparatus structure same as above-mentioned first layer forming portion 201.For example, first layer
Identical processing unit or second layer forming portion 203 that can be used can have both first for forming portion 201 and second layer forming portion 203
The function of layer forming portion 201.
In addition, can have both and place is locally present in the case where second layer forming portion 203 is plasma CVD processing unit
The function in reason portion 202.If being locally present for first resinous wood 51 can be carried out by second layer forming portion 203, deposited locally
It can be formed directly in the second inorganic material layer 42 (second layer) later.
Later, it is transported using substrate carrier robot (not shown) from second layer forming portion 203 and is formed with the second inorganic material
The substrate S of the bed of material 42, and the manufacturing device 1000 of element structure is transported via core room 200 and load lock chamber 210
It is external.
In the manufacturing device 1000 of element structure involved in present embodiment, resin is being formed by resin film forming 100
After film 5, the first resinous wood after plasma etch process is locally present is formed in processing unit 202 is locally present
51.Later, by forming the second inorganic material layer 42 (second layer), so as to requiring as protective layer in boundary portion 2b etc.
The position of barrier property effectively forms the second inorganic material layer 42 (second layer).Also, using as the biased electrical of detection device
Pressure sensor 229, by the variation of measured value, comes to measure the bias voltage Vpp for being applied to electrode 226 from high frequency electric source 227
The unnecessary part of resin film 5 on judgement removal substrate.By terminating etching process based on the judging result (testing result),
So as to accurately remove the resin film 5 of flat part.Therefore, the time needed for can be shortened film formation process, and make membrane property
Stablize, prevents the variation of membrane property.
In the following, the element structure that the manufacturing device 1000 of the element structure as involved in present embodiment is manufactured
Other examples are illustrated.
The element knot in this example manufactured for the manufacturing device 1000 of the element structure as involved in present embodiment
For structure body 10, resinous wood is not limited solely to unevenly be present in the boundary portion as around the first inorganic material layer 41 (protrusion)
The structure of 2b, such as can also be in the positive 2a or the positive 41a of the first inorganic material layer 41 etc. of the substrate 2 other than boundary portion 2b
Remain the resinous wood.
In this case, as shown in figure 12, the second inorganic material layer 42 (second layer) has via 52 layers of the second resinous wood
It is stacked in the region on the first inorganic material layer 41.Second resinous wood 52 is present in the first inorganic material layer 41 and the second inorganic material
Between layer 42, and independently unevenly it is present on the positive 41a of the first inorganic material layer 41 with the first resinous wood 51.Even if
In this case, the adaptation being also able to maintain that between the first inorganic material layer 41 and the second inorganic material layer 42, therefore will not
Damage the barrier properties of element structure 10.
As above-mentioned, according to the present embodiment involved in element structure 10, since the side of device layer 3 is inorganic by first
Material layer 41 (first layer) and the covering of the second inorganic material layer 42 (second layer), therefore moisture or oxygen can be prevented to device layer 3
Intrusion.
In addition, according to the present embodiment, due to that, unevenly there are the first resinous wood 51, can be prevented in boundary portion 2b
The decline of bad with the covering power of the first inorganic material layer 41 or the second inorganic material layer 42 and generation barrier properties, and
And stable element characteristic can be maintained for a long time.
In the following, the element structure that the manufacturing device 1000 of the element structure as involved in present embodiment is manufactured
Other examples are illustrated.
As shown in figure 13, element structure 20 involved in this example further have be present in the first inorganic material layer 41 with
The second resinous wood 52 between second inorganic material layer 42.Second resinous wood 52 and the first resinous wood 51 independently unevenly exist
In on the front of the first inorganic material layer 41.
In the element structure 20 involved in this example, the front of the first inorganic material layer 41 might not be flat, such as
When having been illustrated before film forming and (when substrate transports or be added to before film formation device) or forming a film etc., by keeping particle P mixed
Enter into film and forms concave-convex situation.If being mixed into particle into the first inorganic material layer 41, the first inorganic material layer 41
Coverage property decline to device layer 3, it is possible to be unable to get desired barrier properties.
Therefore, element structure 20 involved in this example has in the first inorganic material generated by being mixed into etc. for particle P
The bad portion of covering of the bed of material 41 is filled with the structure of the second resinous wood 52.Typically, which is unevenly present in
Boundary portion 32b between the front of first inorganic material layer 41 and the circumferential surface of particle P.The spreadability of device layer 3 is mentioned as a result,
Height, and can be carried out and functioning the second resinous wood 52 as substrate the second inorganic material layer 42 it is appropriate at
Film.
Second resinous wood 52 is formed by method same as the first resinous wood 51.Second resinous wood 52 can also by with
The identical resin of first resinous wood 51 is constituted.In this case, 51 He of the first resinous wood can be formed simultaneously in same processes
Second resinous wood 52.
Here, the resinous wood of removal flat etc. is formed as relatively thin part in processing unit 202 is locally present, from
And the first inorganic material layer 41 exposes.At this point, the resinous wood for being formed in periphery particle P etc. is formed thicker and remains.When from
When element structure 20 is vertically observed in top, it is greater than the resin for being formed in particle periphery to the area absoluteness of flat part
The area of material, therefore after the relatively thin resinous wood of removal flat, amount to be etched is greatly decreased, and generate with etching
Reaction sharply reduce.At this point, pressure changes, and bias voltage changes.In this example, it is believed that if terminated
The etching of flat part is then reduced by the gas that etching generates, and pressure decline (plasma density decline), on bias voltage
It rises.
At this point, not removing the resin film 5 of boundary portion 2b, the first resinous wood 51 is formed by being locally present for resin film 5.
Equally, the resin film 5 for not removing boundary portion 32b to form the second resinous wood 52 by being locally present for resin film 5.
In this example, also same as the manufacture of said elements structural body 10, using as the bias voltage of detection device biography
Sensor 229 to measure the bias voltage Vpp for being applied to electrode 226 from high frequency electric source 227, and by the variation of measured value, comes
The unnecessary part of resin film 5 on judgement removal substrate S.By terminating etching process based on the judging result, so as to
Resin film 5 is accurately removed, and exposes the first inorganic material layer 41 (first layer) of flat effectively.In addition, energy
Prevent the over etching for being intended to uneven existing resinous wood 53.In addition, according to this example, due to being made up by the second resinous wood 52
Since the film quality for being mixed into generation of particle P declines, thus ensuring that desired barrier properties, while improving productivity.
In the following, the element structure that the manufacturing device 1000 of the element structure as involved in present embodiment is manufactured
Other examples are illustrated.
As shown in figure 14, element structure 30 involved in this example for example includes substrate 21, have the function of device layer 3 (
Layer)；Protrusion 40, the side 3s of covering device layer 3；First inorganic material layer 41 (first layer) and the second inorganic material layer 42 (
Two layers), it is formed in a manner of covering protrusion 40 and device layer 3 on the front of substrate 21.
Protrusion 40 is formed on the positive 21a of substrate 21, and has the recess portion 40a of containment device layer 3 in central portion.?
In this example, the bottom surface of recess portion 40a is formed on position more higher than the positive 21a of substrate 21, but can also be formed in and front
On the identical height and position of 21a, it can also be formed on position more lower than positive 21a.
Element structure 30 involved in this example, which further has, is present in the first inorganic material layer 41 and the second inorganic material
Resinous wood 53 between the bed of material 42.Resinous wood 53 is unevenly present in the lateral surface of protrusion 40 and the positive 21a of substrate 21 respectively
Between boundary portion 21b and protrusion 40 medial surface and device layer 3 between boundary portion 22b.It can inhibit the first inorganic material as a result,
The bed of material 41 and the second inorganic material layer 42 are bad to the covering of the positive 3a of protrusion 40 and device layer 3, and it is special to improve barrier
Property.Resinous wood 53 can be formed by method same as above-mentioned first resinous wood 51 and the second resinous wood 52.
In so having indent and convex substrate S, being made by uneven existing resinous wood 51,52,53 can not be by inorganic
The part that material layer 41,42 covers further planarizes.It can further equably and covering power is formed in resin excellently
The inorganic material layer 41,42 to form a film on material.In addition, although the leakproofness of 51,52,53 pairs of water of resinous wood etc. is lower than inorganic material layer
41,42, but since uneven existing resinous wood 51,52,53 is covered without revealing to outside atmosphere by inorganic material layer 41,42
Out, therefore leakproofness is improved.That is, resinous wood 51,52,53 is not membranaceous, but it is preferred that make resinous wood 51,52,53 with will not
The mode exposed to outside atmosphere unevenly exists.
More than, the preferred embodiment of the present invention is illustrated, it should be understood that these embodiments are of the invention
For example, and being not considered as limited.Can be added, be omitted without departing from the scope of the present invention, being replaced and its
He changes.Therefore, it is not considered that the present invention is limited by explanation above-mentioned, but is defined by the claims.
For example, in the above embodiment, covering the second inorganic material layer of the first inorganic material layer 41 (first layer)
42 (second layers) are made of simple layer, but the second inorganic material layer 42 (second layer) can also be made of multilayer film.In the situation
Under, it can also be formed and resin material is supplied on substrate by the process for forming each layer and unevenly be present in the recessed of substrate
The resinous wood of protrusion, thus, it is possible to further increase barrier property.
In addition, in the above embodiment, after forming the first inorganic material layer 41 (first layer), making the first resin
Material 51 is locally present around the first inorganic material layer 41 as protrusion, but can also using first layer forming portion 201 come
It is formed before the first inorganic material layer 41, by resin film forming portion 100 and is locally present processing unit 202 and makes the first resinous wood 51
Unevenly it is present in around device layer 3.The efficiency of 41 covering device layer 3 of the first inorganic material layer can be improved as a result,.
Industrial availability
As application examples of the invention, the encapsulation of organic el device or the encapsulation of electronic device can be enumerated.
Description of symbols
S, 2,21 ... substrate
2b, 21b, 22b, 32b ... boundary portion
3 ... device layers (functional layer)
5 ... resin films
5a ... resin material film
10,20,30 ... element structure
40 ... protrusions
41 ... first inorganic material layers (first layer)
42 ... second inorganic material layers (second layer)
51,53 ... first resinous woods
52 ... second resinous woods
100 ... resin film forming portions (film forming room)
102 ... objective tables
105 ... shower plates
102a ... substrate cooling apparatus
112 ... resin material supply pipes (first pipe)
112V ... valve
113 ... resin material pass-over offsets (second pipe)
113V ... valve
122 ... UV irradiation units
130 ... gasification slots
132 ... spitting unit
135 ... heating parts
140 ... resinous wood feed liquid supply pipes
150 ... resin material material containers
200 ... core rooms
201 ... first layer forming portions (film forming room)
202 ... are locally present processing unit
222 ... chambers
223 ... gas introduction tubes
224 ... high frequency electric sources
225 ... antennas
226 ... electrodes
227 ... high frequency electric sources
228 ... pressure-control valves
229 ... offset voltage sensors (detection device), 203 ... second layer forming portion (film forming room)
204 ... functional layer forming portions (film forming room)
210 ... load lock chambers (film forming room)
300 ... gasifiers
400 ... control units
The manufacturing device of 1000 ... element structures
Claims (3)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
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| PCT/JP2018/005953 WO2018155425A1 (en) | 2017-02-21 | 2018-02-20 | Method for manufacturing element structure |
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| JP (1) | JP6799134B2 (en) |
| KR (1) | KR102186663B1 (en) |
| CN (1) | CN109892012B (en) |
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| WO (1) | WO2018155425A1 (en) |
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| JPS5619624A (en) * | 1979-07-27 | 1981-02-24 | Hitachi Ltd | Detection of etching end point in plasma processor |
| JPH07201832A (en) * | 1993-12-28 | 1995-08-04 | Toshiba Corp | Equipment for manufacturing semiconductor |
| JPH11286792A (en) * | 1998-03-31 | 1999-10-19 | Jeol Ltd | High frequency plasma equipment |
| JP2000357679A (en) * | 1999-06-14 | 2000-12-26 | Yamaha Corp | Method of detecting etching end point |
| JP2012064387A (en) * | 2010-09-15 | 2012-03-29 | Toshiba Corp | Organic electroluminescent display device and manufacturing method thereof |
| US20140225089A1 (en) * | 2013-02-12 | 2014-08-14 | Japan Display Inc. | Organic semiconductor device and method of manufacturing the same |
| CN105284186A (en) * | 2013-06-07 | 2016-01-27 | 株式会社爱发科 | Element structure and method for producing same |
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| JP4917833B2 (en) * | 2005-06-29 | 2012-04-18 | エルジー ディスプレイ カンパニー リミテッド | Organic EL display and manufacturing method thereof |
| JP2013073880A (en) | 2011-09-29 | 2013-04-22 | Ulvac Japan Ltd | Light emitting element manufacturing method |
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- 2018-02-20 WO PCT/JP2018/005953 patent/WO2018155425A1/en active Application Filing
- 2018-02-20 KR KR1020197009521A patent/KR102186663B1/en active Active
- 2018-02-20 JP JP2019501332A patent/JP6799134B2/en active Active
- 2018-02-21 TW TW107105820A patent/TWI690106B/en active
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JPS53108286A (en) * | 1977-03-03 | 1978-09-20 | Nichiden Varian Kk | Etching control device |
| JPS5619624A (en) * | 1979-07-27 | 1981-02-24 | Hitachi Ltd | Detection of etching end point in plasma processor |
| JPH07201832A (en) * | 1993-12-28 | 1995-08-04 | Toshiba Corp | Equipment for manufacturing semiconductor |
| JPH11286792A (en) * | 1998-03-31 | 1999-10-19 | Jeol Ltd | High frequency plasma equipment |
| JP2000357679A (en) * | 1999-06-14 | 2000-12-26 | Yamaha Corp | Method of detecting etching end point |
| JP2012064387A (en) * | 2010-09-15 | 2012-03-29 | Toshiba Corp | Organic electroluminescent display device and manufacturing method thereof |
| US20140225089A1 (en) * | 2013-02-12 | 2014-08-14 | Japan Display Inc. | Organic semiconductor device and method of manufacturing the same |
| CN105284186A (en) * | 2013-06-07 | 2016-01-27 | 株式会社爱发科 | Element structure and method for producing same |
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| KR20190044112A (en) | 2019-04-29 |
| CN109892012B (en) | 2021-06-29 |
| TW201842693A (en) | 2018-12-01 |
| KR102186663B1 (en) | 2020-12-04 |
| JPWO2018155425A1 (en) | 2019-07-04 |
| JP6799134B2 (en) | 2020-12-09 |
| TWI690106B (en) | 2020-04-01 |
| WO2018155425A1 (en) | 2018-08-30 |
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