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JPS56137674A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS56137674A
JPS56137674A JP4051280A JP4051280A JPS56137674A JP S56137674 A JPS56137674 A JP S56137674A JP 4051280 A JP4051280 A JP 4051280A JP 4051280 A JP4051280 A JP 4051280A JP S56137674 A JPS56137674 A JP S56137674A
Authority
JP
Japan
Prior art keywords
oxygen
amount
injection
generation
interface
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4051280A
Other languages
Japanese (ja)
Inventor
Seiichi Iwamatsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHIYOU LSI GIJUTSU KENKYU KUMIAI
Original Assignee
CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHIYOU LSI GIJUTSU KENKYU KUMIAI filed Critical CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority to JP4051280A priority Critical patent/JPS56137674A/en
Publication of JPS56137674A publication Critical patent/JPS56137674A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6706—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device for preventing leakage current 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6758—Thin-film transistors [TFT] characterised by the insulating substrates
    • H10D30/6759—Silicon-on-sapphire [SOS] substrates

Landscapes

  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE:To prevent deterioration of characteristic of an SOS-type device owing to the generation of a back channel by injecting ions of oxygen and electroconduction- type determining impurity into an interface between a semiconductor formed on the surface of a dielectric base body and the base body. CONSTITUTION:The oxygen ion and B ion are injected into the region of the interface of an SOS wafer formed by providing a P-type Si layer 2 on a sapphire substrate 1, whereby a region 7 for preventing the back channel is formed. As to the amount of in injection of the ions, the amount of oxygen is set to be about the same with the level density of the Si-sapphire interface, while the amount of B to be about the same of the level density remaining after oxygen is injected. After injection of ions, a gate film 3, a gate electrode 4 and source and drain regions 5 and 6 are formed, whereby FET is prepared. By addition of the oxygen injection process, the generation of the back channel can be prevented even with reduced amount of injection of B and thus the fluctuation of the threshold value and generation of leak current can be reduced.
JP4051280A 1980-03-31 1980-03-31 Manufacture of semiconductor device Pending JPS56137674A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4051280A JPS56137674A (en) 1980-03-31 1980-03-31 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4051280A JPS56137674A (en) 1980-03-31 1980-03-31 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS56137674A true JPS56137674A (en) 1981-10-27

Family

ID=12582587

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4051280A Pending JPS56137674A (en) 1980-03-31 1980-03-31 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS56137674A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5238857A (en) * 1989-05-20 1993-08-24 Fujitsu Limited Method of fabricating a metal-oxide-semiconductor device having a semiconductor on insulator (SOI) structure
JP2007329392A (en) * 2006-06-09 2007-12-20 Oki Electric Ind Co Ltd Manufacturing method of sos substrate and sos device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5238857A (en) * 1989-05-20 1993-08-24 Fujitsu Limited Method of fabricating a metal-oxide-semiconductor device having a semiconductor on insulator (SOI) structure
JP2007329392A (en) * 2006-06-09 2007-12-20 Oki Electric Ind Co Ltd Manufacturing method of sos substrate and sos device

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