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JPS56131934A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS56131934A
JPS56131934A JP3506680A JP3506680A JPS56131934A JP S56131934 A JPS56131934 A JP S56131934A JP 3506680 A JP3506680 A JP 3506680A JP 3506680 A JP3506680 A JP 3506680A JP S56131934 A JPS56131934 A JP S56131934A
Authority
JP
Japan
Prior art keywords
ash3
substrate
improved
laser
state
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3506680A
Other languages
Japanese (ja)
Other versions
JPS637022B2 (en
Inventor
Akihiro Shibatomi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP3506680A priority Critical patent/JPS56131934A/en
Publication of JPS56131934A publication Critical patent/JPS56131934A/en
Publication of JPS637022B2 publication Critical patent/JPS637022B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Optics & Photonics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Recrystallisation Techniques (AREA)

Abstract

PURPOSE:To obtain good crystal characteristics by exercising semiconductor crystal laser anneal with at least one of the crystal component elements at high vapor pressure. CONSTITUTION:A GaAS substrate 5 is set to a substrate holder 6 which has a cooling device 8. Then, the flow rate of AsH3 is controlled by a flowmeter 11 through a cock 10 from AsH3 cylinder 9. Then, laser 1 is irradiated selectively to required parts. By this way, exhalation and evaporation of As during laser annealing can be prevented, without setting passivation film on the surface of substrate 5. Thus, activation rate is improved and dispersion decreased. Mobility is also improved and state of the surface is kept in specular state.
JP3506680A 1980-03-19 1980-03-19 Manufacture of semiconductor device Granted JPS56131934A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3506680A JPS56131934A (en) 1980-03-19 1980-03-19 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3506680A JPS56131934A (en) 1980-03-19 1980-03-19 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS56131934A true JPS56131934A (en) 1981-10-15
JPS637022B2 JPS637022B2 (en) 1988-02-15

Family

ID=12431639

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3506680A Granted JPS56131934A (en) 1980-03-19 1980-03-19 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS56131934A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5873112A (en) * 1981-10-28 1983-05-02 Nippon Hoso Kyokai <Nhk> Laser annealing
JPH05129203A (en) * 1991-11-07 1993-05-25 Japan Steel Works Ltd:The Method of forming epitaxial thin film
WO2007097103A1 (en) * 2006-02-23 2007-08-30 Ihi Corporation Method and apparatus for activating compound semiconductor
JP2008300617A (en) * 2007-05-31 2008-12-11 Ihi Corp Laser annealing method and laser annealing device
WO2016093287A1 (en) * 2014-12-10 2016-06-16 東京エレクトロン株式会社 Microstructure formation method, method for manufacturing semiconductor device, and cmos formation method

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5873112A (en) * 1981-10-28 1983-05-02 Nippon Hoso Kyokai <Nhk> Laser annealing
JPH05129203A (en) * 1991-11-07 1993-05-25 Japan Steel Works Ltd:The Method of forming epitaxial thin film
WO2007097103A1 (en) * 2006-02-23 2007-08-30 Ihi Corporation Method and apparatus for activating compound semiconductor
JP2007227629A (en) * 2006-02-23 2007-09-06 Ishikawajima Harima Heavy Ind Co Ltd Method and apparatus for activating compound semiconductor
US7888250B2 (en) 2006-02-23 2011-02-15 Ihi Corporation Method and apparatus for activating compound semiconductor
KR101102635B1 (en) * 2006-02-23 2012-01-04 가부시키가이샤 아이에이치아이 Method and apparatus for activating compound semiconductor
JP2008300617A (en) * 2007-05-31 2008-12-11 Ihi Corp Laser annealing method and laser annealing device
WO2016093287A1 (en) * 2014-12-10 2016-06-16 東京エレクトロン株式会社 Microstructure formation method, method for manufacturing semiconductor device, and cmos formation method

Also Published As

Publication number Publication date
JPS637022B2 (en) 1988-02-15

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