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JPS559426A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS559426A
JPS559426A JP8201378A JP8201378A JPS559426A JP S559426 A JPS559426 A JP S559426A JP 8201378 A JP8201378 A JP 8201378A JP 8201378 A JP8201378 A JP 8201378A JP S559426 A JPS559426 A JP S559426A
Authority
JP
Japan
Prior art keywords
electrode
rectifier
substrate
expansion coefficient
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8201378A
Other languages
Japanese (ja)
Inventor
Masao Tsuruoka
Keiichi Morita
Hideyuki Yagi
Keiichi Kuniya
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP8201378A priority Critical patent/JPS559426A/en
Publication of JPS559426A publication Critical patent/JPS559426A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/35—Mechanical effects
    • H01L2924/351—Thermal stress

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Die Bonding (AREA)

Abstract

PURPOSE: To prevent damages due to uneven thermal stress of a substrate by selecting a thermal expansion coefficient of an electrode which contacts to the main surface that is closer to a rectifier junction, to be smaller than another electrode being located at the other side.
CONSTITUTION: A rectifier 1 consists of a n-type Si substrate and a p-type layer 2. An electrode 9 which has a coefficient of thermal expansion similar to a semiconductor such as a combination of copper and carbon filaments is fixed by a solder 7 to a layer 3 of the rectifier 1. A similar electrode 10 is also fixed to a substrate 2 by a solder 8. A thermal expansion coefficient of the electrode 9 at the layer 3 that is closer to a rectifier junction is chosen to be less than a termal expansion coefficient of the electrode 10. Consequently, uneven thermal stress at the both side of the rectifier is avoided, thus preventing damages of the substrate.
COPYRIGHT: (C)1980,JPO&Japio
JP8201378A 1978-07-07 1978-07-07 Semiconductor device Pending JPS559426A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8201378A JPS559426A (en) 1978-07-07 1978-07-07 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8201378A JPS559426A (en) 1978-07-07 1978-07-07 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS559426A true JPS559426A (en) 1980-01-23

Family

ID=13762626

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8201378A Pending JPS559426A (en) 1978-07-07 1978-07-07 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS559426A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20130121664A (en) 2010-10-25 2013-11-06 엔지케이 인슐레이터 엘티디 Ceramic material, member for semiconductor manufacturing apparatus, sputtering target member and method for producing ceramic material
KR20140035834A (en) 2012-09-14 2014-03-24 엔지케이 인슐레이터 엘티디 Laminated structure, member for semiconductor manufacturing apparatus, and method for producing laminated structure
KR20140077910A (en) 2011-10-11 2014-06-24 엔지케이 인슐레이터 엘티디 Ceramic member, member for use in semiconductor production device, and method for producing ceramic member

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20130121664A (en) 2010-10-25 2013-11-06 엔지케이 인슐레이터 엘티디 Ceramic material, member for semiconductor manufacturing apparatus, sputtering target member and method for producing ceramic material
KR20140077910A (en) 2011-10-11 2014-06-24 엔지케이 인슐레이터 엘티디 Ceramic member, member for use in semiconductor production device, and method for producing ceramic member
KR20140035834A (en) 2012-09-14 2014-03-24 엔지케이 인슐레이터 엘티디 Laminated structure, member for semiconductor manufacturing apparatus, and method for producing laminated structure

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