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JPS54154281A - Bipolar semiconductor device and its manufacture - Google Patents

Bipolar semiconductor device and its manufacture

Info

Publication number
JPS54154281A
JPS54154281A JP6234578A JP6234578A JPS54154281A JP S54154281 A JPS54154281 A JP S54154281A JP 6234578 A JP6234578 A JP 6234578A JP 6234578 A JP6234578 A JP 6234578A JP S54154281 A JPS54154281 A JP S54154281A
Authority
JP
Japan
Prior art keywords
layer
zener diode
manufacture
semiconductor device
bipolar semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6234578A
Other languages
Japanese (ja)
Inventor
Takashi Iizuka
Tsunao Tsukikawa
Koichiro Yamada
Masaya Oota
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP6234578A priority Critical patent/JPS54154281A/en
Publication of JPS54154281A publication Critical patent/JPS54154281A/en
Pending legal-status Critical Current

Links

Landscapes

  • Bipolar Transistors (AREA)

Abstract

PURPOSE: To secure incoporation of the Zener diode for protection of the junction between the base and the collector without increment of the size of the pellet or deterioration of the degree of integration.
CONSTITUTION: The n+-layer 2 and 2' are provided over the entire main surface of n--type Si substrate 1, and n-epitaxial layer 3 is formed after etching away layer 2'. Then p-type base layer 4 and n+-emitter layer 5 are formed with Al electrode 6 provided. Thus, the Zener diode can be incorporated, and also the breakdown voltage of the Zener diode can be set independently without affecting the electric characteristics of the transistor.
COPYRIGHT: (C)1979,JPO&Japio
JP6234578A 1978-05-26 1978-05-26 Bipolar semiconductor device and its manufacture Pending JPS54154281A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6234578A JPS54154281A (en) 1978-05-26 1978-05-26 Bipolar semiconductor device and its manufacture

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6234578A JPS54154281A (en) 1978-05-26 1978-05-26 Bipolar semiconductor device and its manufacture

Publications (1)

Publication Number Publication Date
JPS54154281A true JPS54154281A (en) 1979-12-05

Family

ID=13197434

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6234578A Pending JPS54154281A (en) 1978-05-26 1978-05-26 Bipolar semiconductor device and its manufacture

Country Status (1)

Country Link
JP (1) JPS54154281A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6161274A (en) * 1984-09-03 1986-03-29 Omron Tateisi Electronics Co Level decision and peak detection circuit in digital magnetic reproducing device
JPS6163054A (en) * 1984-09-03 1986-04-01 Rohm Co Ltd Manufacturing method of semiconductor device
JPH05326399A (en) * 1992-05-15 1993-12-10 Rohm Co Ltd Manufacture of soi substrate

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6161274A (en) * 1984-09-03 1986-03-29 Omron Tateisi Electronics Co Level decision and peak detection circuit in digital magnetic reproducing device
JPS6163054A (en) * 1984-09-03 1986-04-01 Rohm Co Ltd Manufacturing method of semiconductor device
JPH05326399A (en) * 1992-05-15 1993-12-10 Rohm Co Ltd Manufacture of soi substrate

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