JPS5468173A - Semiconductor device and its manufacture - Google Patents
Semiconductor device and its manufactureInfo
- Publication number
- JPS5468173A JPS5468173A JP13478077A JP13478077A JPS5468173A JP S5468173 A JPS5468173 A JP S5468173A JP 13478077 A JP13478077 A JP 13478077A JP 13478077 A JP13478077 A JP 13478077A JP S5468173 A JPS5468173 A JP S5468173A
- Authority
- JP
- Japan
- Prior art keywords
- emitter
- region
- polycrystal
- silicon
- oxide film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 6
- 229910052710 silicon Inorganic materials 0.000 abstract 6
- 239000010703 silicon Substances 0.000 abstract 6
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract 3
- 229910052814 silicon oxide Inorganic materials 0.000 abstract 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract 1
- 229910052796 boron Inorganic materials 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
Landscapes
- Bipolar Transistors (AREA)
Abstract
PURPOSE: To aviod the emitter and base short circuit due to the contact with the base electrode and polycrystal silicon layer, by preventing the superposition of the polycrystal silicon layer on the silicon oxide film at the circumference of the emitter region.
CONSTITUTION: On the silicon semiconductor region 1, silcon oxide film 2, polycrystal silicon layer 4, silicon nitride film 5 and silicon oxide film 6 are coated. Next, by leaving the silicon nitride film 5' of oxidation-proof on the region being the emitter, others are removed by etching. Then, boron is doped on the polycrystal silocon layer 4 exposed and the external base region 7 is formed and it is converted into the silicon oxide film 6. Next, after removing the silicon nitride film 5', the emitter impurity is doped through the polycrystal silicon layer 4', forming the internal base region 8. After that, arsenide is diffused and the emitter region 9 is formed. Further, the polycrystal silicon layer 4, emitter metallic electrode 10 in ohmic contact and the base electrode 11 are formed.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13478077A JPS5468173A (en) | 1977-11-11 | 1977-11-11 | Semiconductor device and its manufacture |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13478077A JPS5468173A (en) | 1977-11-11 | 1977-11-11 | Semiconductor device and its manufacture |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5468173A true JPS5468173A (en) | 1979-06-01 |
Family
ID=15136373
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13478077A Pending JPS5468173A (en) | 1977-11-11 | 1977-11-11 | Semiconductor device and its manufacture |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5468173A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5867060A (en) * | 1981-10-19 | 1983-04-21 | Oki Electric Ind Co Ltd | Manufacture of semiconductor integrated circuit device |
| JPS61158176A (en) * | 1984-12-28 | 1986-07-17 | Toshiba Corp | Semiconductor device and manufacture thereof |
-
1977
- 1977-11-11 JP JP13478077A patent/JPS5468173A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5867060A (en) * | 1981-10-19 | 1983-04-21 | Oki Electric Ind Co Ltd | Manufacture of semiconductor integrated circuit device |
| JPH0239092B2 (en) * | 1981-10-19 | 1990-09-04 | Oki Electric Ind Co Ltd | |
| JPS61158176A (en) * | 1984-12-28 | 1986-07-17 | Toshiba Corp | Semiconductor device and manufacture thereof |
| JPH0421338B2 (en) * | 1984-12-28 | 1992-04-09 | Tokyo Shibaura Electric Co |
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