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JPS5593276A - Semiconductor multiple wavelength light emissionous device - Google Patents

Semiconductor multiple wavelength light emissionous device

Info

Publication number
JPS5593276A
JPS5593276A JP39279A JP39279A JPS5593276A JP S5593276 A JPS5593276 A JP S5593276A JP 39279 A JP39279 A JP 39279A JP 39279 A JP39279 A JP 39279A JP S5593276 A JPS5593276 A JP S5593276A
Authority
JP
Japan
Prior art keywords
ingaasp
layers
wings
electrodes
inp
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP39279A
Other languages
Japanese (ja)
Inventor
Yoshihisa Yamamoto
Hiroshi Kanbe
Nobuhiko Susa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP39279A priority Critical patent/JPS5593276A/en
Publication of JPS5593276A publication Critical patent/JPS5593276A/en
Pending legal-status Critical Current

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Abstract

PURPOSE: To take out light radiation of each LED from a single window, forming multi-layer of LEDs whose luminous oeak differs by degrees, on one semiconductor substrate.
CONSTITUTION: Based on an InP substrate, layers n+-InP 2-1∼2-4, p-InGaAsP 3-1∼3-4, n-InGaAsP 4-1∼4-4, p-InGaAsP 5-1∼5-4, InP high-resistance 6-1∼6-4 and p-layers 7-1∼7-4, as well as electrodes 8-1∼8-4 and 9-1∼9-4 are arranged in the given order, and the round luminous face 10 and wings 11 and 11' for taking out electrode are provided. Electrodes 8 are taken out from each wings 11 of respective layers 5, while electrodes 9 being taken out form each wings 11'. Concentration of layer 7 is selected to be in the middle of concentrations of layers 2 and 4. Constituent ratio of InGaAsP is one and the same in one unit. However, if constituent ratio is changed so that upper unit has broader band gap then the lower unit, the upper units do not absorb light radiated, thus the light radiation of wavelength λ1∼λ2 from the face 10 become possible.
COPYRIGHT: (C)1980,JPO&Japio
JP39279A 1979-01-09 1979-01-09 Semiconductor multiple wavelength light emissionous device Pending JPS5593276A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP39279A JPS5593276A (en) 1979-01-09 1979-01-09 Semiconductor multiple wavelength light emissionous device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP39279A JPS5593276A (en) 1979-01-09 1979-01-09 Semiconductor multiple wavelength light emissionous device

Publications (1)

Publication Number Publication Date
JPS5593276A true JPS5593276A (en) 1980-07-15

Family

ID=11472524

Family Applications (1)

Application Number Title Priority Date Filing Date
JP39279A Pending JPS5593276A (en) 1979-01-09 1979-01-09 Semiconductor multiple wavelength light emissionous device

Country Status (1)

Country Link
JP (1) JPS5593276A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0717452A3 (en) * 1994-12-12 1997-01-29 Motorola Inc Multi-wavelength light emitting diodes and methods of making

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0717452A3 (en) * 1994-12-12 1997-01-29 Motorola Inc Multi-wavelength light emitting diodes and methods of making

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