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JPS5669880A - Semiconductor luminous device - Google Patents

Semiconductor luminous device

Info

Publication number
JPS5669880A
JPS5669880A JP14624779A JP14624779A JPS5669880A JP S5669880 A JPS5669880 A JP S5669880A JP 14624779 A JP14624779 A JP 14624779A JP 14624779 A JP14624779 A JP 14624779A JP S5669880 A JPS5669880 A JP S5669880A
Authority
JP
Japan
Prior art keywords
layer
type
led10
lights
band width
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14624779A
Other languages
Japanese (ja)
Inventor
Motoyuki Yamamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP14624779A priority Critical patent/JPS5669880A/en
Publication of JPS5669880A publication Critical patent/JPS5669880A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00
    • H01L25/0756—Stacked arrangements of devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)

Abstract

PURPOSE:To extract lights with different wavelengths simultaneously from the same location by stacking semiconductor luminous elements, the prohibited band width of luminous regions thereof differes. CONSTITUTION:An LED10 has double-hetero structure by which N and P type GaAlAs layers 12-15 are laminated on N type GaAlAs11. A Zn diffusion layer 18 reaching the layer 13 is formed at a central section of the layer 15, and annular electrodes 16, 17 are attached. An LED20 has double-hetero structure by which P and N type InGaAsP and InP layers 22-25 are stacked on N type InP21. A Zn diffusion layer 28 reaching the layer 23 is made up at a central section of the layer 25, and annular electrodes 26, 27 are built up. The electrodes 16 and 27 are fastened, and voltage is applied between 17 and 26. The prohibited band width of each layer of the LED10 is previously set to value wider than the prohibited band width of a luminous region 29 of the LED20. Thus, lights hardly attenuate when it pass through the LED10, and lights of two kinds are obtained from the same location.
JP14624779A 1979-11-12 1979-11-12 Semiconductor luminous device Pending JPS5669880A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14624779A JPS5669880A (en) 1979-11-12 1979-11-12 Semiconductor luminous device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14624779A JPS5669880A (en) 1979-11-12 1979-11-12 Semiconductor luminous device

Publications (1)

Publication Number Publication Date
JPS5669880A true JPS5669880A (en) 1981-06-11

Family

ID=15403412

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14624779A Pending JPS5669880A (en) 1979-11-12 1979-11-12 Semiconductor luminous device

Country Status (1)

Country Link
JP (1) JPS5669880A (en)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01231380A (en) * 1988-03-11 1989-09-14 Shin Etsu Handotai Co Ltd Color mixture light emitting semiconductor device
JPH01231381A (en) * 1988-03-11 1989-09-14 Shin Etsu Handotai Co Ltd Color mixture light emitting semiconductor device
US5144377A (en) * 1991-04-04 1992-09-01 University Of Delaware High-speed heterojunction light-emitting diode
EP0717452A2 (en) * 1994-12-12 1996-06-19 Motorola, Inc. Film carrier tape for semiconductor devices
EP0730311A2 (en) * 1993-03-19 1996-09-04 Hewlett-Packard Company Wafer bonding of light emitting diode layers
JP2002335015A (en) * 2001-05-09 2002-11-22 Rohm Co Ltd Semiconductor light emitting element
EP1469516A1 (en) * 2003-04-14 2004-10-20 Epitech Corporation, Ltd. White-light emitting semiconductor device using a plurality of light emitting diode chips
JP2007095844A (en) * 2005-09-27 2007-04-12 Oki Data Corp Semiconductor light emitting composite device
JP2008521239A (en) * 2004-11-19 2008-06-19 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ Composite LED module

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01231380A (en) * 1988-03-11 1989-09-14 Shin Etsu Handotai Co Ltd Color mixture light emitting semiconductor device
JPH01231381A (en) * 1988-03-11 1989-09-14 Shin Etsu Handotai Co Ltd Color mixture light emitting semiconductor device
US5144377A (en) * 1991-04-04 1992-09-01 University Of Delaware High-speed heterojunction light-emitting diode
EP0730311A2 (en) * 1993-03-19 1996-09-04 Hewlett-Packard Company Wafer bonding of light emitting diode layers
EP0730311A3 (en) * 1993-03-19 1997-01-29 Hewlett Packard Co Linking layers of light emitting diodes
EP0717452A2 (en) * 1994-12-12 1996-06-19 Motorola, Inc. Film carrier tape for semiconductor devices
EP0717452A3 (en) * 1994-12-12 1997-01-29 Motorola Inc Multi-wavelength light emitting diodes and methods of making
JP2002335015A (en) * 2001-05-09 2002-11-22 Rohm Co Ltd Semiconductor light emitting element
EP1469516A1 (en) * 2003-04-14 2004-10-20 Epitech Corporation, Ltd. White-light emitting semiconductor device using a plurality of light emitting diode chips
JP2008521239A (en) * 2004-11-19 2008-06-19 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ Composite LED module
JP2007095844A (en) * 2005-09-27 2007-04-12 Oki Data Corp Semiconductor light emitting composite device

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