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JPS5553421A - Composite mask for ion etching - Google Patents

Composite mask for ion etching

Info

Publication number
JPS5553421A
JPS5553421A JP12611678A JP12611678A JPS5553421A JP S5553421 A JPS5553421 A JP S5553421A JP 12611678 A JP12611678 A JP 12611678A JP 12611678 A JP12611678 A JP 12611678A JP S5553421 A JPS5553421 A JP S5553421A
Authority
JP
Japan
Prior art keywords
film
etching
specimen
ion etching
pattern
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12611678A
Other languages
Japanese (ja)
Inventor
Keiichi Yanagisawa
Tomoyuki Toshima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP12611678A priority Critical patent/JPS5553421A/en
Publication of JPS5553421A publication Critical patent/JPS5553421A/en
Pending legal-status Critical Current

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  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE: To operate deep processing with high precision, by forming a fixed pattern on the surface of Al film, etching the upper layer of the Al film, then etching Cr film by using the pattern of the Al film, and etching a specimen by using such a mask.
CONSTITUTION: Cr film 2 and Al film 3 are fitted onto the surface of specimen by evaporation or sputtering. Next, a fixed pattern is made of photoresist film on the surface of Al film 3. The upper layer of Al film 3 is etched with a solution of phosphoric acid. Next, by using the pattern of Al film 3, Cr film 2 is etched with a solution of cerium ammonia. By ion-etching specimen 1 by using such a mask, deep processing can be done with high precision.
COPYRIGHT: (C)1980,JPO&Japio
JP12611678A 1978-10-16 1978-10-16 Composite mask for ion etching Pending JPS5553421A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12611678A JPS5553421A (en) 1978-10-16 1978-10-16 Composite mask for ion etching

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12611678A JPS5553421A (en) 1978-10-16 1978-10-16 Composite mask for ion etching

Publications (1)

Publication Number Publication Date
JPS5553421A true JPS5553421A (en) 1980-04-18

Family

ID=14927025

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12611678A Pending JPS5553421A (en) 1978-10-16 1978-10-16 Composite mask for ion etching

Country Status (1)

Country Link
JP (1) JPS5553421A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5079178A (en) * 1988-12-19 1992-01-07 L'etat Francais Represente Par Le Ministre Des Postes, Des Telecommunications Et De L'espace (Centre National D'etudes Des Telecommunications) Process for etching a metal oxide coating and simultaneous deposition of a polymer film, application of this process to the production of a thin film transistor

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4845443A (en) * 1971-10-14 1973-06-29

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4845443A (en) * 1971-10-14 1973-06-29

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5079178A (en) * 1988-12-19 1992-01-07 L'etat Francais Represente Par Le Ministre Des Postes, Des Telecommunications Et De L'espace (Centre National D'etudes Des Telecommunications) Process for etching a metal oxide coating and simultaneous deposition of a polymer film, application of this process to the production of a thin film transistor

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