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JPS5543872A - Insulating gate field effect transistor - Google Patents

Insulating gate field effect transistor

Info

Publication number
JPS5543872A
JPS5543872A JP11697878A JP11697878A JPS5543872A JP S5543872 A JPS5543872 A JP S5543872A JP 11697878 A JP11697878 A JP 11697878A JP 11697878 A JP11697878 A JP 11697878A JP S5543872 A JPS5543872 A JP S5543872A
Authority
JP
Japan
Prior art keywords
base
oxide film
drain
channel region
source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11697878A
Other languages
Japanese (ja)
Inventor
Yoshiki Tanigawa
Kunihiko Hirashima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Pioneer Corp
Original Assignee
Pioneer Electronic Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Pioneer Electronic Corp filed Critical Pioneer Electronic Corp
Priority to JP11697878A priority Critical patent/JPS5543872A/en
Publication of JPS5543872A publication Critical patent/JPS5543872A/en
Pending legal-status Critical Current

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  • Bipolar Transistors (AREA)

Abstract

PURPOSE:To reduce stray capacitance, by reducing reverse current leakage in the base and the channel region, avoiding contact between source and drain regions, and increasing the dielectric strength of the source region, the drain region and the base. CONSTITUTION:Thick oxide film 11, as insulating film, is formed on the surface of low-resistance P-type Si base 1, and opening A is provided by exposing a part of it. Next, by growing an epitaxial layer over the entire surface of base 1, high-resistance N-type single crystal Si layer 4, which becomes channel region, is formed on opening A, and high-resistance N-type polycrystalline Si layer 12 is formed on the surface of oxide film 11. Then, oxide film 11' is formed on the entire surface; and a window for diffusing drain and source is opened on the surface of channel region 4, which sandwiches channel region 4. Then oxide film is formed on the entire region again, oxide film on specified parts on regions 4, 2 and 3 is removed, and gate oxidation is operated. After this, reverse bias electrode 13 is formed on the back of base 1, together with gate, drain and source electrodes 8, 6 and 7.
JP11697878A 1978-09-22 1978-09-22 Insulating gate field effect transistor Pending JPS5543872A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11697878A JPS5543872A (en) 1978-09-22 1978-09-22 Insulating gate field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11697878A JPS5543872A (en) 1978-09-22 1978-09-22 Insulating gate field effect transistor

Publications (1)

Publication Number Publication Date
JPS5543872A true JPS5543872A (en) 1980-03-27

Family

ID=14700455

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11697878A Pending JPS5543872A (en) 1978-09-22 1978-09-22 Insulating gate field effect transistor

Country Status (1)

Country Link
JP (1) JPS5543872A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0042552A2 (en) * 1980-06-16 1981-12-30 Kabushiki Kaisha Toshiba MOS type semiconductor device
US5027177A (en) * 1989-07-24 1991-06-25 Hughes Aircraft Company Floating base lateral bipolar phototransistor with field effect gate voltage control
US5294821A (en) * 1990-10-09 1994-03-15 Seiko Epson Corporation Thin-film SOI semiconductor device having heavily doped diffusion regions beneath the channels of transistors

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS48101887A (en) * 1972-04-01 1973-12-21

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS48101887A (en) * 1972-04-01 1973-12-21

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0042552A2 (en) * 1980-06-16 1981-12-30 Kabushiki Kaisha Toshiba MOS type semiconductor device
US4571609A (en) * 1980-06-16 1986-02-18 Tokyo Shibaura Denki Kabushiki Kaisha Stacked MOS device with means to prevent substrate floating
US5027177A (en) * 1989-07-24 1991-06-25 Hughes Aircraft Company Floating base lateral bipolar phototransistor with field effect gate voltage control
US5294821A (en) * 1990-10-09 1994-03-15 Seiko Epson Corporation Thin-film SOI semiconductor device having heavily doped diffusion regions beneath the channels of transistors

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