JPS54144182A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS54144182A JPS54144182A JP5303878A JP5303878A JPS54144182A JP S54144182 A JPS54144182 A JP S54144182A JP 5303878 A JP5303878 A JP 5303878A JP 5303878 A JP5303878 A JP 5303878A JP S54144182 A JPS54144182 A JP S54144182A
- Authority
- JP
- Japan
- Prior art keywords
- layers
- sio2
- diffusion
- electrode
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
- H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
- H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
- H10D89/611—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using diodes as protective elements
Landscapes
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Amplifiers (AREA)
Abstract
PURPOSE:To establish the double diffusion type MOSFET with high output bidirectional protective diode, with low cost and high dielectric strength, by using the substrate material as it is. CONSTITUTION:The SiO2 mask is provided on the N type substrate material 31 4 to 7 mum thick, and the P type diffusion layers 32 and 33 are made, 5 mu in depth. In this case, the SiO2 film caused in the layers 32,33 is selectively opened 56 to 58. The hole 56 is formed with the difference of film thickness. Further, the N layers 41,34,37,38 about 1 mu in depth are selectively diffused to form the channel 35 about 1 mu long. On the channel, the gate oxide film 36, Mo electrode 39 are provided, hole is opened after coating with SiO2 and the Al electrodes 40 and 42 are attached. The electrode 39 is connected to the electrode via the layers 37-33-38, and bidirectional protective diode is inserted between the gate and source. Thus, since the diode 2 can be formed with the diffusion at double diffusion MOSFET formation, even if the inpurity concentration of the substrate is greatly decreased, no adverse effect on other elements is made and high dielectric strength and output can be obtained without using expensive epitaxial substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5303878A JPS54144182A (en) | 1978-05-02 | 1978-05-02 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5303878A JPS54144182A (en) | 1978-05-02 | 1978-05-02 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS54144182A true JPS54144182A (en) | 1979-11-10 |
Family
ID=12931709
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5303878A Pending JPS54144182A (en) | 1978-05-02 | 1978-05-02 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS54144182A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58210677A (en) * | 1982-06-01 | 1983-12-07 | Nec Corp | Field effect transistor |
| US4630084A (en) * | 1981-02-02 | 1986-12-16 | Siemens Aktiengesellschaft | Vertical mis-field effect transistor with low forward resistance |
-
1978
- 1978-05-02 JP JP5303878A patent/JPS54144182A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4630084A (en) * | 1981-02-02 | 1986-12-16 | Siemens Aktiengesellschaft | Vertical mis-field effect transistor with low forward resistance |
| JPS58210677A (en) * | 1982-06-01 | 1983-12-07 | Nec Corp | Field effect transistor |
| JPH0559589B2 (en) * | 1982-06-01 | 1993-08-31 | Nippon Electric Co |
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