JPS5543846A - Working of single crystal substance - Google Patents
Working of single crystal substanceInfo
- Publication number
- JPS5543846A JPS5543846A JP11653078A JP11653078A JPS5543846A JP S5543846 A JPS5543846 A JP S5543846A JP 11653078 A JP11653078 A JP 11653078A JP 11653078 A JP11653078 A JP 11653078A JP S5543846 A JPS5543846 A JP S5543846A
- Authority
- JP
- Japan
- Prior art keywords
- single crystal
- working
- crystal substance
- faces
- sets
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000013078 crystal Substances 0.000 title abstract 3
- 239000000126 substance Substances 0.000 title abstract 2
- 238000003776 cleavage reaction Methods 0.000 abstract 2
- 230000007017 scission Effects 0.000 abstract 2
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 239000002344 surface layer Substances 0.000 abstract 1
Landscapes
- Processing Of Stones Or Stones Resemblance Materials (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
PURPOSE:To improve working efficiency by minimizing a stress residual on a single crystal substance or a work hardened surface layer. CONSTITUTION:The cleavage plane of a silicon comes in 4 sets of (111) faces. In the case of such wafer 1 that the crystal face comes in (001), a nearly uniform stress is applied on the cleavage plane from working the 4 sets of (111) faces in the direction <100> which is slanting right downwards, thereby suppressing an occurrence of residual strain.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11653078A JPS5543846A (en) | 1978-09-25 | 1978-09-25 | Working of single crystal substance |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11653078A JPS5543846A (en) | 1978-09-25 | 1978-09-25 | Working of single crystal substance |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5543846A true JPS5543846A (en) | 1980-03-27 |
Family
ID=14689398
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11653078A Pending JPS5543846A (en) | 1978-09-25 | 1978-09-25 | Working of single crystal substance |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5543846A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5640246A (en) * | 1979-09-12 | 1981-04-16 | Toshiba Corp | Surface treatment of silicon wafer |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS495196A (en) * | 1972-05-02 | 1974-01-17 |
-
1978
- 1978-09-25 JP JP11653078A patent/JPS5543846A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS495196A (en) * | 1972-05-02 | 1974-01-17 |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5640246A (en) * | 1979-09-12 | 1981-04-16 | Toshiba Corp | Surface treatment of silicon wafer |
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