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JPS5536980A - Production of film by plasma reaction - Google Patents

Production of film by plasma reaction

Info

Publication number
JPS5536980A
JPS5536980A JP11034178A JP11034178A JPS5536980A JP S5536980 A JPS5536980 A JP S5536980A JP 11034178 A JP11034178 A JP 11034178A JP 11034178 A JP11034178 A JP 11034178A JP S5536980 A JPS5536980 A JP S5536980A
Authority
JP
Japan
Prior art keywords
substrate
gas
plasma reaction
film
sih4
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11034178A
Other languages
English (en)
Other versions
JPS5856249B2 (ja
Inventor
Morio Inoue
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Priority to JP11034178A priority Critical patent/JPS5856249B2/ja
Publication of JPS5536980A publication Critical patent/JPS5536980A/ja
Publication of JPS5856249B2 publication Critical patent/JPS5856249B2/ja
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • C23C16/5096—Flat-bed apparatus

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Plasma & Fusion (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP11034178A 1978-09-07 1978-09-07 プラズマ反応による薄膜の製造方法 Expired JPS5856249B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11034178A JPS5856249B2 (ja) 1978-09-07 1978-09-07 プラズマ反応による薄膜の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11034178A JPS5856249B2 (ja) 1978-09-07 1978-09-07 プラズマ反応による薄膜の製造方法

Publications (2)

Publication Number Publication Date
JPS5536980A true JPS5536980A (en) 1980-03-14
JPS5856249B2 JPS5856249B2 (ja) 1983-12-14

Family

ID=14533289

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11034178A Expired JPS5856249B2 (ja) 1978-09-07 1978-09-07 プラズマ反応による薄膜の製造方法

Country Status (1)

Country Link
JP (1) JPS5856249B2 (ja)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5856325A (ja) * 1981-09-29 1983-04-04 Fujitsu Ltd プラズマｃｖｄ膜形成方法
FR2518122A1 (fr) * 1981-12-16 1983-06-17 Energy Conversion Devices Inc Procede de fabrication des alliages et des dispositifs amorphes photosensibles par depot de phase chimique
JPS58128727A (ja) * 1982-01-27 1983-08-01 Nippon Denso Co Ltd 薄膜の形成方法
US4728529A (en) * 1984-06-12 1988-03-01 Battelle-Institut E.V. Method of producing diamond-like carbon-coatings
JPS6362238A (ja) * 1986-09-02 1988-03-18 Toshiba Corp 薄膜堆積方法
JPH01168864A (ja) * 1987-12-23 1989-07-04 Anelva Corp 金属膜の成膜方法
US5268070A (en) * 1991-01-22 1993-12-07 Sony Corporation Dry etching method
US5354421A (en) * 1991-01-22 1994-10-11 Sony Corporation Dry etching method

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5856325A (ja) * 1981-09-29 1983-04-04 Fujitsu Ltd プラズマｃｖｄ膜形成方法
FR2518122A1 (fr) * 1981-12-16 1983-06-17 Energy Conversion Devices Inc Procede de fabrication des alliages et des dispositifs amorphes photosensibles par depot de phase chimique
JPS58128727A (ja) * 1982-01-27 1983-08-01 Nippon Denso Co Ltd 薄膜の形成方法
US4728529A (en) * 1984-06-12 1988-03-01 Battelle-Institut E.V. Method of producing diamond-like carbon-coatings
JPS6362238A (ja) * 1986-09-02 1988-03-18 Toshiba Corp 薄膜堆積方法
JPH01168864A (ja) * 1987-12-23 1989-07-04 Anelva Corp 金属膜の成膜方法
JPH0520503B2 (ja) * 1987-12-23 1993-03-19 Anelva Corp
US5268070A (en) * 1991-01-22 1993-12-07 Sony Corporation Dry etching method
US5354421A (en) * 1991-01-22 1994-10-11 Sony Corporation Dry etching method
KR100238691B1 (ko) * 1991-01-22 2000-01-15 이데이 노부유끼 드라이에칭방법

Also Published As

Publication number Publication date
JPS5856249B2 (ja) 1983-12-14

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